STB100NF03L-03中文资料

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February 2003

STB100NF03L-03 STP100NF03L-03

STB100NF03L-03-1

N-CHANNEL 30V - 0.0026 ? -100A D2PAK/I2PAK/TO-220

STripFET? II POWER MOSFET

s TYPICAL R DS (on) = 0.0026 ?s LOW THRESHOLD DRIVE s 100% AVALANCHE TESTED s LOGIC LEVEL DEVICE

THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")

SURFACE-MOUNTING D 2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size?"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS TYPE

V DSS R DS(on)I D STB100NF03L-03STP100NF03L-03STB100NF03L-03-01

30 V 30 V 30 V

<0.0032 ?<0.0032 ?<0.0032 ?

100 A 100 A 100 A

ABSOLUTE MAXIMUM RATINGS

Pulse width limited by safe operating area

(1) Current Limited by Package

(2) Starting T j = 25 o C, I AR = 50A, V DD = 50V

Symbol Parameter

Value Unit V DS Drain-source Voltage (V GS = 0)30V V DGR Drain-gate Voltage (R GS = 20 k ?)30V V GS Gate- source Voltage

± 16V I D (1)Drain Current (continuous) at T C = 25°C 100A I D (1)Drain Current (continuous) at T C = 100°C 100A I DM (?)Drain Current (pulsed)400A P tot Total Dissipation at T C = 25°C 300W Derating Factor

2W/°C E AS (2) Single Pulse Avalanche Energy 1.9J T stg Storage Temperature

-55 to 175

°C

T j

Operating Junction Temperature

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFF

ON (*)

DYNAMIC

Rthj-case Rthj-amb

T l

Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max Max

0.562.5300

°C/W °C/W °C

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D = 250 μA, V GS = 0

V I DSS Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

V DS = Max Rating T C = 125°C 110μA μA I GSS

Gate-body Leakage Current (V DS = 0)

V GS = ± 16V

±100

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 μA 1

1.7

2.5V R DS(on)

Static Drain-source On Resistance

V GS = 10 V I D = 50 A V GS = 4.5 V

I D = 50 A

0.00260.0032

0.00320.0045

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit g fs (*)Forward Transconductance V DS >I D(on)xR DS(on)max I D =10 A

C iss C oss C rss

Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25V f = 1 MHz V GS = 0

62001720300pF pF pF

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(?)Pulse width limited by safe operating area.

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Time Rise Time

V DD = 15 V

I D = 50 A R G =4.7 ?

V GS = 4.5 V (Resistive Load, Figure 3)35315ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD = 24V I D = 100A V GS = 5V

8822.536

nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f Turn-off Delay Time Fall Time

V DD = 20 V

I D = 50 A R G =4.7?,

V GS = 4.5 V (Resistive Load, Figure 3)11595ns ns t r(Voff)t f t c

Off-Voltage Rise Time Fall Time

Cross-over Time

V clamp = 24 V I D = 100 A

R G =4.7?

V GS = 4.5 V (Inductive Load, Figure 5)

11055100

ns ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (?)Source-drain Current

Source-drain Current (pulsed)100400A A V SD (*)Forward On Voltage I SD = 100 A

V GS = 0

1.3

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD = 100 A

di/dt = 100A/μs V DD = 20 V

T j = 150°C (see test circuit, Figure 5)

751504

ns nC A

ELECTRICAL CHARACTERISTICS (continued)

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Fig. 3: Switching Times Test Circuits For Resistive

Fig. 5: Test Circuit For Inductive Load Switching

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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181A1 2.49 2.690.0980.106

A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.95

9.35

0.352

0.368

D18

0.315

E 10

10.4

0.394

0.409

E18.5

0.334

G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.4

3.2

0.094

0.126

R 0.4

0.015

0°8°

0°

8°

D 2PAK MECHANICAL DATA

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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H210

10.40

0.393

0.409

L216.400.645L328.90

1.137

L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA

3.75

3.85

0.147

0.151

TO-220 MECHANICAL DATA

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

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DIM.

mm inch

MIN.MAX.MIN.MAX.

A010.510.70.4130.421

B015.715.90.6180.626

D 1.5 1.60.0590.063

D1 1.59 1.610.0620.063

E 1.65 1.850.0650.073

F11.411.60.4490.456

K0 4.8 5.00.1890.197

P0 3.9 4.10.1530.161

P111.912.10.4680.476

P2 1.9 2.100750.082

R50 1.574

T0.250.35.0.00980.0137

W23.724.30.9330.956

DIM.

mm inch

MIN.MAX.MIN.MAX.

A33012.992

B 1.50.059

C12.813.20.5040.520

D20.20.795

G24.426.40.960 1.039

N100 3.937

T30.4 1.197

BASE QTY BULK QTY

10001000

REEL MECHANICAL DATA

* on sales type

TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*

D2PAK FOOTPRINT

TAPE MECHANICAL DATA

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

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