2N7002K-TP;中文规格书,Datasheet资料

N-Channel MOSFET

Unit V DS Drain-source Voltage 60 V I D Drain Current 340 mA P D Total Power Dissipation 350 mW T J Operating Junction Temperature -55 to +150кT STG Storage Temperature -55 to +150к? High density cell design for low R DS(ON)? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? Marking : 72K Symbol Rating Maximum Ratings @ 25O C Unless Otherwise Specified

Rating ? ESD Protected up to 2KV (HBM)

? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1Electrical Characteristics @ 25O C Unless Otherwise Specified

Symbol Parameter Min Typ Max Units V (BR)DSS Drain-Source Breakdown Voltage

(V GS =0Vdc, I D =10μAdc)

60 --- --- Vdc

V GS(th) Gate-Threshold Voltage

(V DS =V GS , I D =1mAdc)

1.0

--- --- Vdc I DSS Zero Gate Voltage Drain Current

(V DS =48Vdc, V GS =0Vdc) --- --- 1 uAdc

r DS(on) Drain-Source On-Resistance

(V GS =4.5Vdc, I D =200mAdc)(V GS =10Vdc, I D =500mAdc)------------ 5.35.0?V SD

Diode Forward Voltage

(V GS =0Vdc, I S =300mAdc) --- --- 1.5 Vdc

C iss Input Capacitance --- --- 40

C OSS Output Capacitance --- --- 30

C rSS Reverse Transfer Capacitance

V DS =10Vdc,

V GS =0Vdc f=1MHz --- --- 10

Switching

t d(on) Turn-on Time --- --- 10

t d(off) Turn-off Time

--- --- 15(V DS =0Vdc, V GS =f 5Vdc) --- --- f 100 nAdc

(dl s /dt=-100A/μS )

Qr (V GS =0V, I S =300mA,V R =25V,) Recovered charge --- ---30nC V DD =50 V, R L =250Ω,

R GS =50Ω,V GS =10 V, R G =50Ω V GS =0V, I S =300mA, V R =25V,

dl s /dt=-100A/μS t rr

Reverse

recovery time

30------ns

R thJA Thermal Resistance fromJunction to Ambient 357 к/W

V GS Gate-source Voltage V I GSS Gate-body Leakage

(V DS =0Vdc, V GS =f 10Vdc)

--- --- f 200 nAdc

f 20

2N7002K

Micro Commercial Components

2N7002

Micro Commercial Components

TM Micro Commercial Components

Micro Commercial Components

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Device Packing

Part Number-TP Tape&Reel: 3Kpcs/Reel

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