ES2AF-ES2DF-ES2GF-ES2JF-SMAF规格书-佑风微电子

S u r f a c e M o u n t S u p e r f a s t R e c o v e r y R e c t i f i e r R e v e r s e V o l t a g e – 50 t o 600 V F o r w a r d C u r r e n t –2 A

P I

N

N I N G PIN 12

DESCRIPTION Cathode Anode

Top View

Marking Code:

ES2AF~ES2JF: ES2A~ES2J

Simplified outline SMAF and symbol

MECHANICAL DATA ? ? Terminals: Solderable per MIL-STD-750, Method 2026? pprox. Weight: 27mg 0.00086oz

Case: SMAF

A Maximum DC Blocking Voltage

Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method)

Maximum Forward Voltage at 2A

P a r a m e t e r

Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range

Maximum Average Forward Rectified Current at T L = 100 °C

Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHz

R V RRM V RMS V DC I F(AV)

I FSM V F I R

C j

T , T j stg

50100150200300400600V 3570105140210280420V V

2

501

5100

60

35-55 ~ +150

A

A

V μA

ns °C

S y m b o l s Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.

25 °C A b s o l u t e M a x i m u m R a t i n g s a n d C h a r a c t e r i s t i c s

Maximum Reverse Recovery Time at I =0.5A, I =1A, I =0.25A

F R rr t rr pF

E S 2A

F E S 2B F E S 2C F E S 2D F E S 2E F E S 2

G F E S 2J F U n i t s 50

100

150

200300

400

600

1.25

1.7

1

2

FEATURES

For surface mounted applications ? Low profile package

? Glass Passivated Chip Juntion ? Superfast reverse recovery time

? Lead free in comply with EU RoHS 2011/65/EU directives

?

50 ohm Noninductive

25Vdc approx

+

-

D.U.T

10 ohm Noninductive

NonInductive

1 ohm

OSCILLOSCOPE Note 1

PULSE GENERATOR

Note 2

Note ：1.Rise Time = 7ns, max.

Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max.

Source Impedance = 50 ohms.

F

i g .1 R e v e r s e R e c o v e r y T i m e C h a r a c t e r i s t i c A n d T e s t C i r c u i t D i a g r a m

F i g .4 T y p i c a l C h a r a c t e r i s t i c s

F o r w a r d 1.2 1.4F i g .5 T y p i c a l J u n c t i o n C a p a c i t a n c e

J u n c t i o n C a p a c i t a n c e ( p F )

Reverse Voltage (V)

1100

0.1

1010T =25J °C f = 1.0MHz V = 50mV sig p-p

203040506070

0.40.81.21.62.02.4

0.0

255075100125150175

A v e r a g e F o r w a r d C u r r e n t (A )

Lead Temperature (°C)

F i g .2 M a x i m u m A v e r a g e F o r w a r d C u r r e n t R a t i n g Single phase half wave resistive or inductive P.C.B mounted on 0.315×0.315"(8.0)pad areas

×8.0mm 0.2 1.00.600.01

0.1

1.0

10

0.40.80.001

T =25J °C

I n s t a n e o u s F o r w a r d C u r r e n t (A )

Instaneous Forward Voltage (V)ES2JF

ES2EF

ES2AF F i g .3 T y p i c a l R e v e r s e C h a r a c t e r i s t i c s

I - C u r r e n t (A )

R R e v e r s e μ20100

6000.1

1.0

10

% of PIV.VOLTS

100

4080300

T =25J °C

T =75J °C

T =125J °C

-0.25

-1.0

0+0.5

t rr

10ns/div

Set time Base for 10ns/div

M a r k i n g

Type number

Marking code

ES2A

ES2B

ES2C ES2D ES2E ES2G ES2J

P A C K A G E O U T L I N E

P l a s t i c s u r f a c e m o u n t e d p a c k a g e ; 2 l e a d s

S M A F

A

C

∠ALL ROUND V A

M e

UNIT mm

1.30.23 3.7

2.7 4.91.10.18

3.3 2.4

4.47°

max min mil

max min

5143

9.17.1

146130

10694

193173

A C D E H E ∠

1.61.36351

e Bottom View

H E

g Top View

1.31.05139

g g

∠ALL ROUND

E

D A

E

p a d

p a d

ES2AF ES2BF

ES2CF ES2DF ES2EF

ES2GF ES2JF

T h e r e c o m m e n d e d m o u n t i n g p a d s i z e

Unit ：mm(mil)

2.8(110)1.6(63)1.8(71)

1.6(63)