IK15N60T中文资料

Low Loss DuoPack : IGBT in TrenchStop ? and Fieldstop technology

with soft, fast recovery anti-parallel EmCon 3 diode

? Very low V CE(sat) 1.5 V (typ.)

? Maximum Junction Temperature 175 °C

? Short circuit withstand time – 5μs

Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ? TrenchStop ?

technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior - very high switching speed

? Positive temperature coefficient in V CE(sat)

? Low EMI

? Low Gate Charge

? Qualified according to JEDEC 1

for target applications ? Pb-free lead plating; RoHS compliant

? Complete product spectrum and PSpice Models : https://www.360docs.net/doc/017868514.html,/igbt/ Type

V CE

I C

V CE(sat ),Tj=25°C

T j,max Marking Code

Package

IKB15N60T 600V 15A 1.5V 175°C K15T60 PG-TO263-3-2

Maximum Ratings

Parameter Symbol Value Unit Collector-emitter voltage

V C E

600 V DC collector current, limited by T jmax T C = 25°C T C = 100°C

I C

30 15

Pulsed collector current, t p limited by T jmax

I C p u l s 45 Turn off safe operating area (V CE ≤ 600V, T j ≤ 175°C) - 45 Diode forward current, limited by T jmax T C = 25°C T C = 100°C

I F

30 15

Diode pulsed current, t p limited by T jmax I F p u l s 45 A

Gate-emitter voltage V G E ±20 V Short circuit withstand time 2)

V GE = 15V, V CC ≤ 400V, T j ≤ 150°C t S C 5

μs

Power dissipation T C = 25°C P t o t 130 W Operating junction temperature T j -40...+175 Storage temperature

T s t g -55...+175 Soldering temperature (reflow soldering, MSL1)

245

°C

J-STD-020 and JESD-022

Allowed number of short circuits: <1000; time between short circuits: >1s.

Thermal Resistance Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance, junction – case

R t h J C

1.15 Diode thermal resistance, junction – case R t h J C D 1.9 Thermal resistance, junction – ambient R t h J A 6cm2 Cu

K/W

Electrical Characteristic, at T j = 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions min. Typ. max. Unit

Static Characteristic

Collector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =0.2mA 600 - - Collector-emitter saturation voltage

V C E (s a t )

V G E = 15V, I C =15A T j =25°C T j =175°C

- - 1.5 1.9 2.05 - Diode forward voltage

V F

V G E =0V, I F =15A T j =25°C T j =175°C

- - 1.65 1.6 2.05 - Gate-emitter threshold voltage V G E (t h ) I C =210μA,V C E =V G E 4.1 4.9 5.7

V Zero gate voltage collector current

I C E S V C E =600V , V G E =0V T j =25°C T j =175°C

- -

40 1000

μA

Gate-emitter leakage current I G E S V C E =0V,V G E =20V - - 100 nA Transconductance g f s V C E =20V, I C =15A - 8.7 - S Integrated gate resistor R G i n t

- ?

Dynamic Characteristic Input capacitance C i s s - 860 - Output capacitance

C o s s - 55 - Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz

- 24 - pF Gate charge

Q G a t e V C C =480V, I C =15A V G E =15V

- 87 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case L E - 7 - nH Short circuit collector current 1)

I C (S C )

V G E =15V,t S C ≤5μs

V C C = 400V, T j ≤ 150°C

- 137.5 - A

Allowed number of short circuits: <1000; time between short circuits: >1s.

Switching Characteristic, Inductive Load, at T j =25 °C

Value

Parameter Symbol Conditions min. Typ. max. Unit

IGBT Characteristic Turn-on delay time t d (o n ) - 17 - Rise time

t r - 11 - Turn-off delay time t d (o f f ) - 188 - Fall time t f - 50 - ns Turn-on energy E o n - 0.22 - Turn-off energy E o f f - 0.35 - Total switching energy

E t s

T j =25°C,

V C C =400V,I C =15A,V G E =0 /15V, R G =15?, L σ1)

=154nH, C σ1)

=39pF

Energy losses include “tail” and diode reverse recovery.

- 0.57 -

mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 34 - ns Diode reverse recovery charge Q r r - 0.24 - μC Diode peak reverse recovery current I r r m

- 10.4 - A Diode peak rate of fall of reverse recovery current during t b

di r r /dt

T j =25°C,

V R =400V, I F =15A, di F /dt =825A/μs

- 718 - A/μs

Switching Characteristic, Inductive Load, at T j =175 °C

Value

Parameter Symbol Conditions min. Typ. max. Unit

IGBT Characteristic Turn-on delay time t d (o n ) - 17 - Rise time

t r - 15 - Turn-off delay time t d (o f f ) - 212 - Fall time t f - 79 - ns Turn-on energy E o n - 0.34 - Turn-off energy E o f f - 0.47 - Total switching energy

E t s T j =175°C,

V C C =400V,I C =15A,V G E =0/15V, R G = 15 ? L σ1)

=154nH, C σ1)

=39pF

Energy losses include “tail” and diode reverse recovery. - 0.81 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 140 - ns Diode reverse recovery charge Q r r - 1.0 - μC Diode peak reverse recovery current I r r m

- 14.7 - A Diode peak rate of fall of reverse recovery current during t b

di r r /dt

T j =175°C

V R =400V, I F =15A, di F /dt =825A/μs

- 495 - A/μs

Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

I C , C O L L E C T O R C U R R E N T

10Hz

100Hz

1kHz

10kHz

100kHz

10A

20A

30A

40A

I C , C O L L E C T O R C U R R E N T

10V

100V 1000V

0.1A

10A

f , SWITCHING FREQUENCY

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(T j ≤ 175°C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 15?) Figure 2. Safe operating area

(D = 0, T C = 25°C, T j ≤175°C; V GE =15V)

P t o t , P O W E R D I S S I P A T I O N

25°C

50°C 75°C 100°C 125°C 150°C

0W 20W 40W 60W 80W 100W 120W

I C , C O L L E C T O R C U R R E N T

10A

20A

30A

T C , CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature (T j ≤ 175°C)

Figure 4. Collector current as a function of

case temperature

(V GE ≥ 15V, T j ≤ 175°C)

I C , C O L L E C T O R C U R R E N T

2V 3V 0A

5A 10A 15A 20A 25A

30A 35A

40A I C , C O L L E C T O R C U R R E N T

0V 1V

2V 3V

10A 15A 20A 25A

30A 35A

40A

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 5. Typical output characteristic

(T j = 25°C)

Figure 6. Typical output characteristic

(T j = 175°C)

I C , C O L L E C T O R C U R R E N T

5A 10A

15A 20A 25A 30A 35A

V C E (s a t ), C O L L E C T O R -E M I T T S A T U R A T I O N V O L T A G E

0°C

50°C

100°C

150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

V GE , GATE-EMITTER VOLTAGE

T J , JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(V CE =20V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature (V GE = 15V)

t , S W I T C H I N G T I M

E S

10A

15A

20A

25A

t , S W I T C H I N G T

I M E S

10?

20?

30?

40?

50?

I C , COLLECTOR CURRENT

R G , GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current (inductive load, T J =175°C,

V CE = 400V, V GE = 0/15V, R G = 15?, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a

function of gate resistor (inductive load, T J = 175°C,

V CE = 400V, V GE = 0/15V, I C = 15A, Dynamic test circuit in Figure E)

t , S W I T C H I N G T I

M E S

25°C 50°C

75°C

100°C 125°C 150°C

V G E (t h ), G A T E -E M I T T T R S H O L D V O L

T A G E

-50°C

0°C 50°C 100°C 150°C

T J , JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 15A, R G =15?, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature (I C = 0.21mA)

E , S W I T C H I N G E N E R G Y L O S S E S

5A 10A 15A 20A 25A

0.0m

0.4m 0.8m 1.2m 1.6m E , S W I T C H I N G E N E R G Y L O S S E S

0?10?20?30?40?50?60?70?80?

I C , COLLECTOR CURRENT

R G , GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current (inductive load, T J = 175°C,

V CE = 400V, V GE = 0/15V, R G = 15?, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses

as a function of gate resistor (inductive load, T J = 175°C,

V CE = 400V, V GE = 0/15V, I C = 15A, Dynamic test circuit in Figure E)

E , S W I T C H I N G E N E R G Y L O S S E S

0.0m 0.2m 0.4m 0.6m 0.8m 1.0m 1.2m

T J , JUNCTION TEMPERATURE

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V CE = 400V,

V GE = 0/15V, I C = 15A, R G = 15?, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter voltage

(inductive load, T J = 175°C,

V GE = 0/15V, I C = 15A, R G = 15?, Dynamic test circuit in Figure E)

V G E , G A T E -E M I T

T E R V O L T A G E

10V

15V

c , C A P A C I T A N C

Q GE , GATE CHARGE

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 17. Typical gate charge

(I C =15 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage (V GE =0V, f = 1 MHz)

I C (s c ), s h o r t c i r c u i t C O L L E C T O R C U R R E N T

12V

14V 16V 18V

0A 50A

100A

150A

200A

t S C , S H O R T C I R C U I T W I T

H S T A N D T I M E

10V

11V 12V 13V 14V

0μs

2μs

4μs

6μs

8μs

10μs

12μs

V GE , GATE -EMITTETR VOLTAGE

V GE , GATE -EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage

(V CE ≤ 400V, T j ≤ 150°C)

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage (V CE =600V , start at T J =25°C, T Jmax <150°C)

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E

1μs

10μs 100μs 1ms 10ms 100ms 10-2

K/W

10-1

K/W

100

K/W

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E

1μs

10μs 100μs 1ms 10ms 100ms

10-2

10-1

100

t P , PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = t p / T )

Figure 22. Diode transient thermal

impedance as a function of pulse width (D =t P /T )

t r r , R E V E R S E R E C O V E R Y T I M E

0ns

40ns

80ns

120ns

160ns

200ns

Q r r , R E V E R S E R E C O V E R Y C H A R G E

400A/μs

600A/μs 800A/μs

0.0μC

0.2μC

0.4μC

0.6μC

0.8μC

1.0μC

di F /dt , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope (V R =400V, I F =15A,

Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge

as a function of diode current slope

(V R = 400V, I F = 15A,

Dynamic test circuit in Figure E)

I r r , R E V E R S E R E C O V E R Y C U R R E N T

400A/μs 600A/μs 800A/μs

2A 4A 6A 8A 10A 12A 14A 16A

r r D I O D E P E A K R A T E O F F A L L O F R E V E R S E R E C O V E R Y C U R R E N

di F /dt , DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current slope

(V R = 400V, I F = 15A,

Dynamic test circuit in Figure E) Figure 26. Typical diode peak rate of fall of

reverse recovery current as a function of diode current slope (V R =400V, I F =15A,

Dynamic test circuit in Figure E)

I F , F O R W A R D C U R R

E N T

0V 1V 2V

10A

20A

30A

40A

V F , F O R W A R D V O L T A G

0°C

50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

V F , FORWARD VOLTAGE

T J , JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a

function of junction temperature

PG-TO263-3-2

Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF.

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

? Infineon Technologies AG 11/6/07.

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (https://www.360docs.net/doc/017868514.html,).

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