RTR030N05TL;中文规格书,Datasheet资料
2.5V Drive Nch MOSFET
RTR030N05
z Structure
Silicon N-channel MOSFET
z Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
z Application
Switching
z Absolute maximum ratings (Ta=25°C)
?1?1?2Parameter
V V DSS Symbol 45V V GSS ±12A I D
±3A I DP ±12A I S
0.8A I SP 12W P D 1.0°C Tch 150°C
Tstg
?55 to +150
Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature
Range of Storage temperature
Continuous Pulsed Continuous Pulsed
?1 Pw ≤10μs, Duty cycle ≤1%
?2 When mounted on a ceramic board
Source current (Body diode)
z Thermal resistance
°C / W
Rth (ch-a)125Parameter
Symbol Limits Unit Channel to ambient
? When mounted on a ceramic board
?
z Electrical characteristics (Ta=25°C)
?Pulsed
z Body diode characteristics (Source-drain) (Ta=25°C)
V SD ?Pulsed ??? 1.2V
Forward voltage I S=3A, V GS=0V Parameter Symbol Min.Typ.Max.Unit Conditions
012345
6
101001000
0.01
0.1110
0.01
0.1
1
10
10100
1000
0.01
0.1110
101001000
0.01
0.1110
0.11
10
0.01
0.1
1
10
10100
1000
0.01
0.1110
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Ty pical Output Characteristics(Ⅱ)
Fig.3 Ty pical Transfer Characteristics
Fig.4 Static Drain-Source On-State Resistance v s. Drain Current(Ⅰ)
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
Fig.7 Static Drain-Source On-State Resistance v s. Drain Current(Ⅳ)
v s. Sourse-Drain Voltage
Fig.8 Forward Transfer Admittance vs. Drain Current
D R A I N C U R R
E N T : I D [A ]
DRAIN-CURRENT : I D [A]S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n )[m ?]
DRAIN-CURRENT : I D [A]
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n )[m ?]
DRAIN-CURRENT : I D [A]S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n )[m ?]
DRAIN-CURRENT : I D [A]S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n )[m ?]
F O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | [S ]
DRAIN-CURRENT : I D [A]R E V E R S E D R A I N C U R R E N T : I s [A ]
z Electrical characteristics curves
0246810
1
2
3
4
5
6
7
10
100
100010000
0.010.1110100
0.01
0.1
1
10
Fig.10 Static Drain-Source On-State
Resistance v s. Gate Source Voltage
Fig.12 Dy namic Input Characteristics
Fig.13 Ty pical Capacitance v s. Drain-Source Voltage
Fig.11 Switching Characteristics
GATE-SOURCE VOLTAGE : V GS
[V]
DRAIN-CURRENT : I D [A]TOTAL GATE CHARGE : Qg [nC]DRAIN-SOURCE VOLTAGE : V DS
[V]
C A P A C I T A N C E : C [p F ]
z Measurement circuits
Fig.1-1 Switching Time Measurement Circuit V DS
Fig.1-2 Switching Time Waveforms
V GS
V DS
Fig.2-1 Gate Charge Measurement Circuit V DS
Fig.2-2 Gate Charge Waveform V
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RTR030N05TL