IRFZ24NPBF;中文规格书,Datasheet资料
HEXFET ? Power MOSFET
IRFZ24NPbF
Fifth Generation
HEXFET ? power MOSFETs from
International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l
Advanced Process Technology l Dynamic dv/dt Rating
l 175°C Operating Temperature l Fast Switching
l Fully Avalanche Rated Description
2/10/04
Absolute Maximum Ratings
PD - 94990
l Lead-Free
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html,
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I SD ≤ 10A, di/dt ≤ 280A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
V DD = 25V, starting T J = 25°C, L = 1.0mH
R G = 25?, I AS = 10A. (See Figure 12)
Source-Drain Ratings and Characteristics
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html, 3
Fig 1. Typical Output Characteristics,
T J = 25o C Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
T J = 175o C
1
10
1000.1
1
10
100
I , D r a i n -t o -S o u r c e C u r r e n t (A )D
V , Drain-to-Source Voltage (V)DS
110
1000.1
1
10
100
I , D r a i n -t o -S o u r c e C u r r e n t (A )D
V , Drain-to-Source Voltage (V)DS
1101004
5
6
7
8
9
10
GS V , Gate-to-Source Voltage (V)D I , D r a i n -t o -S o u r c e C u r r e n t (A )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60-40-20
20
40
60
80100120140160180
J
T , Junction Temperature (°C)R
, D r a i n -t o -S o u r c e O n R e s i s t a n c e D S (o n
)(N o r m a l i z e d )
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html,
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0100
200
300
400
500
600
7001
10
100
C , C a p a c i t a n c e (p F )
DS V , Drain-to-Source Voltage (V)
04
8
12
16
20
4
8
12
16
20
Q , Total Gate Charge (nC)G
V , G a t e -t o -S o u r c e V o l t a
g e (V )G S
110
1000.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V , Source-to-Drain Voltage (V)I , R e v e r s e D r a i n C u r r e n t (A )
SD
S D 1
10100
1000
1
10
100
V , Drain-to-Source Voltage (V)DS
I , D r a i n C u r r e n t (A )D
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html, 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a.
Switching Time Test Circuit
V V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V DD
04
8
12
16
20
25
50
75
100
125
150
175
C
I , D r a i n C u r r e n t (A m p s )
D T , Case Temperature (°C)
0.01
0.1
1
10
0.00001
0.00010.0010.010.11
t , Rectangular Pulse Duration (sec)1
t h J
C T h e r m a l R e s p o n s e (Z )
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html,
Fig 12a.
Unclamped Inductive Test Circuit
V
DD
V I AS
Fig 12b.
Unclamped Inductive Waveforms
DS
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
V 10 V
Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
20
40
60
80
100
120
140
25
50
75
100
125
150
175
J
E , S i n g l e P u l s e A v a l a n c h e E n e r g y (m
J )A
S Starting T , Junction Temperature (°C)
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html, 7
Fig 14. For N-Channel HEXFET ? power MOSFETs
* V GS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
V DD
IRFZ24NPbF
https://www.360docs.net/doc/068817217.html,
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at https://www.360docs.net/doc/068817217.html, for sales contact information .02/04
Note: For the most current drawings please refer to the IR website at:
https://www.360docs.net/doc/068817217.html,/package/
分销商库存信息: IR
IRFZ24NPBF