IRFZ24NPBF;中文规格书,Datasheet资料

HEXFET ? Power MOSFET

IRFZ24NPbF

Fifth Generation

HEXFET ? power MOSFETs from

International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

l

Advanced Process Technology l Dynamic dv/dt Rating

l 175°C Operating Temperature l Fast Switching

l Fully Avalanche Rated Description

2/10/04

Absolute Maximum Ratings

PD - 94990

l Lead-Free

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html,

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

I SD ≤ 10A, di/dt ≤ 280A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 175°C

Pulse width ≤ 300μs; duty cycle ≤ 2%.

V DD = 25V, starting T J = 25°C, L = 1.0mH

R G = 25?, I AS = 10A. (See Figure 12)

Source-Drain Ratings and Characteristics

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html, 3

Fig 1. Typical Output Characteristics,

T J = 25o C Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics,

T J = 175o C

1

10

1000.1

1

10

100

I , D r a i n -t o -S o u r c e C u r r e n t (A )D

V , Drain-to-Source Voltage (V)DS

110

1000.1

1

10

100

I , D r a i n -t o -S o u r c e C u r r e n t (A )D

V , Drain-to-Source Voltage (V)DS

1101004

5

6

7

8

9

10

GS V , Gate-to-Source Voltage (V)D I , D r a i n -t o -S o u r c e C u r r e n t (A )

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-60-40-20

20

40

60

80100120140160180

J

T , Junction Temperature (°C)R

, D r a i n -t o -S o u r c e O n R e s i s t a n c e D S (o n

)(N o r m a l i z e d )

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html,

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0100

200

300

400

500

600

7001

10

100

C , C a p a c i t a n c e (p F )

DS V , Drain-to-Source Voltage (V)

04

8

12

16

20

4

8

12

16

20

Q , Total Gate Charge (nC)G

V , G a t e -t o -S o u r c e V o l t a

g e (V )G S

110

1000.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

V , Source-to-Drain Voltage (V)I , R e v e r s e D r a i n C u r r e n t (A )

SD

S D 1

10100

1000

1

10

100

V , Drain-to-Source Voltage (V)DS

I , D r a i n C u r r e n t (A )D

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html, 5

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a.

Switching Time Test Circuit

V V d(on)

r

d(off)

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

V DD

04

8

12

16

20

25

50

75

100

125

150

175

C

I , D r a i n C u r r e n t (A m p s )

D T , Case Temperature (°C)

0.01

0.1

1

10

0.00001

0.00010.0010.010.11

t , Rectangular Pulse Duration (sec)1

t h J

C T h e r m a l R e s p o n s e (Z )

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html,

Fig 12a.

Unclamped Inductive Test Circuit

V

DD

V I AS

Fig 12b.

Unclamped Inductive Waveforms

DS

Current Sampling Resistors

Fig 13b.

Gate Charge Test Circuit

V 10 V

Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

20

40

60

80

100

120

140

25

50

75

100

125

150

175

J

E , S i n g l e P u l s e A v a l a n c h e E n e r g y (m

J )A

S Starting T , Junction Temperature (°C)

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html, 7

Fig 14. For N-Channel HEXFET ? power MOSFETs

* V GS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

V DD

IRFZ24NPbF

https://www.360docs.net/doc/068817217.html,

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

Data and specifications subject to change without notice.

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.360docs.net/doc/068817217.html, for sales contact information .02/04

Note: For the most current drawings please refer to the IR website at:

https://www.360docs.net/doc/068817217.html,/package/

分销商库存信息: IR

IRFZ24NPBF

相关主题
相关文档
最新文档