SSTA56T116;中文规格书,Datasheet资料

Transistors

Rev.A 1/2

PNP general purpose transistor

SSTA56 / MMSTA56

z Features

z External dimensions (Unit : mm)

1) BV CEO 40V (I C = 100P A)

SSTA56

MMSTA56

ROHM : SST3

JEDEC : SOT-23

ROHM : SMT3EIAJ : SC-59

JEDEC : SOT-346

(1) Emitter

(2) Base (3) Collector

(1) Emitter (2) Base (3) Collector

0~0.10.2Min.

2.4±0.2

1.30.950.45±0.1

0.150.42.9±0.21.9±0.20.950.95 +0.2?0.1

?0.1 +0.2

+0.1?0.06

+0.1

?0.05

(2)

(1)

(3)

0~0.1

2.8±0.2

1.60.3M i n .

1.10.8±0.1

0.150.42.9±0.21.9±0.20.950.95 +0.2?0.1

?0.1 +0.2

+0.1?0.06

+0.1

?0.05

(2)

(1)

(3)

All terminals have same dimensions

2) Complements the SSTA06 / MMSTA06.

z Package, marking and packaging specifications

Part No.SSTA56SST3R2G T1163000

MMSTA56SMT3R2G T1463000

Packaging type

Marking Code

Basic ordering unit (pieces)

z Absolute maximum ratings (T a=25q C)

Parameter

Symbol V CBO V CEO V EBO I C Tj Tstg

P C Limits ?80?80?4?0.5150?55 to +150

0.2Unit V V V A W 0.35W ?

? Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE

°C °C

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current

Collector power dissipation Junction temperature Storage temperature

z Electrical characteristics (T a=25q C)

Parameter

Symbol Min.Typ.Max.Unit Conditions

BV EBO BV CEO I CBO I CEO ?4?80?????????0.1?1V V μA I C =?100mA I C =?1mA V CB =?80V V CE =?60V

?V BE(on)???1.2V V CE(sat)??0.25V I C /I B =?100mA/?10mA V CE /I B =?1V/100mA V CE =?1V , I C =?10mA h FE 100???V CE =?1V , I C =?100mA

100?fT

MHz

V CE =?1V , I E = 100mA , f =100MHz

Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current

Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency

Transistors

Rev.A 2/2

z Electrical characteristic curves

I C -C O L L E C T O R C U R R E N T (m A )

V CE -COLLECTOR-EMITTER VOLTAGE (

Fig.1 Grounded emitter output

characteristics h F E -D C C U R R E N T G A I N

I C -COLLECTOR CURRENT (mA)

Fig.2 DC current gain vs. collector

current ( Ι )h F E -D C C U R R E N T G A I N

I C -COLLECTOR CURRENT (mA)

Fig.3 DC current gain vs. collector

current ( ΙΙ

)

V C E (S A T )C O L L E C T O R E M I T T E R S A T U R A T I O N V O L T A G E (V )

I C -COLLECTOR CURRENT (mA)Fig.4 Collector emitter saturation

voltage vs. collector current V B E (S A T )B A S E E M I T T E R S A T U R A T I O N V O L T A G E (V )

I C -COLLECTOR CURRENT (mA)

Fig.5 Base-emitter saturation

voltage vs. collector current V B E (O N )B A S E E M I T T E R V O L T A G E (V

)

I C -COLLECTOR CURRENT (mA)

Fig.6 Grounded emitter propagation

characteristics

C A P A C I T A N C E (p F )

REVERSE BIAS VOLTAGE (V)

Fig.7 Input/output capecitance

vs. voltage

C U R R E N T G A I N -B A N

D W I D T H P R O D U C T (M H z )

I C -COLLECTOR CURRENT (mA)

Fig.8 Gain bandwidth product

vs. collector current

Appendix

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

分销商库存信息: ROHM

SSTA56T116