IKW50N60T中文资料

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

? Very low V CE(sat) 1.5 V (typ.)

? Maximum Junction Temperature 175 °C

? Short circuit withstand time – 5μs

? Designed for :

- Frequency Converters - Uninterrupted Power Supply

? Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat)

? Positive temperature coefficient in V CE(sat) ? Low EMI

? Low Gate Charge

? Very soft, fast recovery anti-parallel EmCon HE diode

? Complete product spectrum and PSpice Models : https://www.360docs.net/doc/0418949393.html,/igbt/ Type

V CE

I C

V CE(sat ),Tj=25°C

T j,max Marking Code

Package Ordering Code

IKW50N60T 600V 50A 1.5V

175°C

K50T60 TO-247 Q67040S4718

Maximum Ratings

Parameter Symbol Value Unit Collector-emitter voltage

V C E 600

V DC collector current, limited by T jmax T C = 25°C T C = 100°C

I C

801)

Pulsed collector current, t p limited by T jmax

I C p u l s 150

Turn off safe operating area (V CE ≤ 600V, T j ≤ 175°C) - 150 Diode forward current, limited by T jmax T C = 25°C T C = 100°C

I F

100 50

Diode pulsed current, t p limited by T jmax I F p u l s 150

Gate-emitter voltage V G E ±20

Short circuit withstand time 2) V GE = 15V, V CC ≤ 400V, T j ≤ 150°C t S C 5 μs

Power dissipation T C = 25°C P t o t 333 W Operating junction temperature T j -40...+175 Storage temperature

T s t g -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s

260

°C

1) Value limited by bond wire

Allowed number of short circuits: <1000; time between short circuits: >1s.

P-TO-247-3-1 (TO-220AC)

Thermal Resistance Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance, junction – case

R t h J C

TO-247 AC 0.45 Diode thermal resistance, junction – case R t h J C D TO-247 AC

0.8 Thermal resistance, junction – ambient R t h J A TO-247 AC

K/W

Electrical Characteristic, at T j = 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions min. Typ. max. Unit

Static Characteristic

Collector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =0.2mA 600 - - Collector-emitter saturation voltage

V C E (s a t )

V G E = 15V, I C =50A T j =25°C T j =175°C

- - 1.5 1.9 2 - Diode forward voltage

V F

V G E =0V, I F =50A T j =25°C T j =175°C

- - 1.65 1.6 2.05 - Gate-emitter threshold voltage V G E (t h ) I C =0.8mA,V C E =V G E 4.1 4.9 5.7

V Zero gate voltage collector current

I C E S V C E =600V , V G E =0V T j =25°C T j =175°C

- -

40 1000

μA

Gate-emitter leakage current I G E S V C E =0V,V G E =20V - - 100 nA Transconductance g f s V C E =20V, I C =50A - 31 - S Integrated gate resistor R G i n t

- ?

Dynamic Characteristic Input capacitance C i s s - 3140 - Output capacitance

C o s s - 200 -

Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz - 93 - pF

Gate charge

Q G a t e

V C C =480V, I C =50A V G E =15V

- 310 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case L E TO-247-3-1

- 7 - nH Short circuit collector current 1)

I C (S C )

V G E =15V,t S C ≤5μs V C C = 400V, T j ≤ 150°C

- 458.3 - A

Allowed number of short circuits: <1000; time between short circuits: >1s.

Switching Characteristic, Inductive Load, at T j =25 °C

Value

Parameter Symbol Conditions min. Typ. max. Unit

IGBT Characteristic Turn-on delay time t d (o n ) - 26 - Rise time

t r - 29 -

Turn-off delay time t d (o f f ) - 299 - Fall time t f - 29 -

ns Turn-on energy E o n - 1.2 - Turn-off energy E o f f - 1.4 - Total switching energy

E t s

T j =25°C,

V C C =400V,I C =50A,V G E =0/15V,

R G = 7 ?, L σ1)=103nH, C σ1)

=39pF Energy losses include

“tail” and diode

reverse recovery. - 2.6 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 143 - ns Diode reverse recovery charge Q r r - 1.8 - μC Diode peak reverse recovery current I r r m - 27.7 - A Diode peak rate of fall of reverse recovery current during t b

di r r /dt

T j =25°C,

V R =400V, I F =50A, di F /dt =1280A/μs

- 671 - A/μs

Switching Characteristic, Inductive Load, at T j =175 °C

Value

Parameter Symbol Conditions min. Typ. max. Unit

IGBT Characteristic Turn-on delay time t d (o n ) - 27 - Rise time

t r - 33 -

Turn-off delay time t d (o f f ) - 341 - Fall time t f - 55 -

ns Turn-on energy E o n - 1.8 - Turn-off energy E o f f - 1.8 - Total switching energy

E t s

T j =175°C,

V C C =400V,I C =50A,V G E =0/15V,

R G = 7 ?

L σ1)=103nH, C σ1)

=39pF Energy losses include

“tail” and diode

reverse recovery. - 3.6 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 205 - ns Diode reverse recovery charge Q r r - 4.3 - μC Diode peak reverse recovery current I r r m - 40.7 - A Diode peak rate of fall of reverse recovery current during t b

di r r /dt

T j =175°C

V R =400V, I F =50A, di F /dt =1280A/μs

- 449 - A/μs

Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

I C , C O L L E C T O R C U R R E N T

100Hz

1kHz

10kHz

100kHz

I C , C O L L E C T O R C U R R E N T

1V 10V

100V 1000V

10A

100A

f , SWITCHING FREQUENCY

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(T j ≤ 175°C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 7?) Figure 2. Safe operating area

(D = 0, T C = 25°C, T j ≤175°C; V GE =15V)

P t o t , P O W E R D I S S I P A T I O N

25°C

50°C 75°C 100°C 125°C 150°C

0W 50W 100W 150W 200W 250W 300W

I C , C O L L E C T O R C U R R E N T

20A

40A

60A

80A

T C , CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature (T j ≤ 175°C)

Figure 4. Collector current as a function of

case temperature

(V GE ≥ 15V, T j ≤ 175°C)

I C , C O L L E C T O R C U R R E N T

2V 3V

20A 40A 60A 80A 100A 120A

I C , C O L L E C T O R C U R R E N T

0V 1V

2V 3V 4V

20A 40A 60A 80A 100A 120A

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 5. Typical output characteristic

(T j = 25°C)

Figure 6. Typical output characteristic

(T j = 175°C)

I C , C O L L E C T O R C U R R E N T

20A

40A

60A

80A

V C E (s a t ), C O L L E C T O R -E M I T T S A T U R A T I O N V O L T A G E

0°C

50°C

100°C

150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

V GE , GATE-EMITTER VOLTAGE

T J , JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(V CE =10V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature (V GE = 15V)

t , S W I T C H I N G T I M E S

0A 20A 40A 60A 80A

t , S W I T C H I N G T I M E S

10?15?20?25?

I C , COLLECTOR CURRENT

R G , GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current (inductive load, T J =175°C,

V CE = 400V, V GE = 0/15V, R G = 7?, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a

function of gate resistor (inductive load, T J = 175°C,

V CE = 400V, V GE = 0/15V, I C = 50A, Dynamic test circuit in Figure E)

t , S W I T C H I N G T I M E S

25°C

50°C

75°C 100°C 125°C 150°C V G E (t h ), G A T E -E M I T T T R S H O L D V O L T A G E

-50°C

0°C 50°C

100°C 150°C

T J , JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 50A, R G =7?, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature (I C = 0.8mA)

E , S W I T C H I N G E N E R G Y L O S S E S

20A

40A

60A

80A

0.0mJ

2.0mJ

4.0mJ

6.0mJ

8.0mJ

E , S W I T C H I N G E N E R G Y L O S S E S

0?10?20?

0.0m

1.0m

2.0m

3.0m

4.0m

5.0m

6.0m

I C , COLLECTOR CURRENT

R G , GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current (inductive load, T J = 175°C,

V CE = 400V, V GE = 0/15V, R G = 7?, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses

as a function of gate resistor (inductive load, T J = 175°C,

V CE = 400V, V GE = 0/15V, I C = 50A, Dynamic test circuit in Figure E)

E , S W I T C H I N G E N E R G Y L O S S E

25°C

50°C 75°C 100°C 125°C 150°C

0.0mJ

1.0mJ

2.0mJ

3.0mJ

E , S W I T C H I N G E N E R G Y L O S S E S

T J , JUNCTION TEMPERATURE

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V CE = 400V, V GE = 0/15V, I C = 50A, R G = 7?, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter voltage

(inductive load, T J = 175°C, V GE = 0/15V, I C = 50A, R G = 7?, Dynamic test circuit in Figure E)

V G E , G A T E -E M I T T E R V O L T A G E

10V

15V

c , C A P A C I T A N C E

Q GE , GATE CHARGE

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 17. Typical gate charge

(I C =50 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage (V GE =0V, f = 1 MHz)

I C (s c ), s h o r t c i r c u i t C O L L E C T O R C U R R E N T

12V

14V

16V

18V

0A 100A 200A 300A 400A 500A 600A 700A 800A t S C , S H O R T C I R C U I T W I T H S T A N D T I M E

10V

11V 12V 13V 14V

0μs

2μs

4μs

6μs

8μs

10μs

12μs

V GE , GATE -EMITTETR VOLTAGE

V GE , GATE -EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage

(V CE ≤ 400V, T j ≤ 150°C)

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage (V CE =600V , start at T J =25°C, T Jmax <150°C)

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E

10-2

10-1

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E

10-2

10-1

t P , PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = t p / T )

Figure 22. Diode transient thermal

impedance as a function of pulse width (D =t P /T )

t r r , R E V E R S E R E C O V E R Y T I M E

0ns

50ns 100ns 150ns

200ns 250ns 300ns

Q r r , R E V E R S E R E C O V E R Y C H A R G E

700A/μs

800A/μs 900A/μs 1000A/μs

di F /dt , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope (V R =400V, I F =50A,

Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge

as a function of diode current slope

(V R = 400V, I F = 50A,

Dynamic test circuit in Figure E)

I r r , R E V E R S E R E C O V E R Y C U R R E N T

700A/μs 800A/μs 900A/μs 1000A/μs

10A

20A

30A

40A

d i r r /d t , D I O D E P E A K R A T E O F F A L L

O F R E V E R S E R E C O V E R Y C U R R E N T

di F /dt , DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current slope

(V R = 400V, I F = 50A,

Dynamic test circuit in Figure E) Figure 26. Typical diode peak rate of fall of

reverse recovery current as a function of diode current slope (V R =400V, I F =50A,

Dynamic test circuit in Figure E)

I F , F O R W A R D C U R R E N T

1V 2V

20A 40A 60A 80A 100A 120A

V F , F O R W A R D V O L T A G E

0°C

50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

V F , FORWARD VOLTAGE

T J , JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a

function of junction temperature

dimensions TO-247AC

symbol[mm] [inch]

min max min max

A 4.78 5.28 0.1882 0.2079

B 2.29 2.51 0.0902 0.0988

C 1.78 2.29 0.0701 0.0902

D 1.09 1.32 0.0429 0.0520

E 1.73 2.06 0.0681 0.0811

F 2.67 3.18 0.1051 0.1252

G 0.76 max 0.0299 max

H 20.80 21.16 0.8189 0.8331

K 15.65 16.15 0.6161 0.6358

L 5.21 5.72 0.2051 0.2252

M 19.81 20.68 0.7799 0.8142

N 3.560 4.930 0.1402 0.1941

?P 3.61 0.1421

Q 6.12 6.22 0.2409 0.2449

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

? Infineon Technologies AG 2004

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