TDSY5160中文资料
TDSG / O / Y51..
Document Number 83126Rev. 1.5, 31-Aug-04
Vishay Semiconductors
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Standard 7- Segment Display 13 mm
Description
The TDS.51.. series are 13 mm character seven seg-ment LED displays in a very compact package.
The displays are designed for a viewing distance up to 7 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast.
All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment.
Features
?Evenly lighted segments ?Grey package surface ?Untinted segments
?Luminous intensity categorized
?Yellow and green categorized for color ?Wide viewing angle
?Suitable for DC and high peak current ?
Lead-free device
Applications
Panel meters
Test- and measure- equipment Point-of-sale terminals Control units TV sets
Parts Table
Part
Color, Luminous Intensity
Circuitry
TDSO5150Orange red, I V > 700 μcd Common anode TDSO5160Orange red, I V > 700 μcd Common cathode TDSY5150Y ellow, I V > 700 μcd Common anode TDSY5160Y ellow, I V > 700 μcd Common cathode TDSG5150Green, I V > 700 μcd Common anode TDSG5160
Green, I V > 700 μcd
Common cathode
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Document Number 83126
Rev. 1.5, 31-Aug-04
TDSG / O / Y51..
Vishay Semiconductors Absolute Maximum Ratings
T amb = 25°C, unless otherwise specified
TDSR515./TDSR516., TDSO515./TDSO516.,TDSY515./TDSY516.,TDSG515./TDSG516.
Optical and Electrical Characteristics
T amb = 25°C, unless otherwise specified
Orange red
TDSO5150/5160
Note 1) I Vmin and I V groups are mean values of all segments (a to g, D1 to D4),
matching factor within segments is ≥ 0.5, excluding decimal points and colon.
Parameter
Test condition
Part
Symbol Value Unit Reverse voltage per segment or DP
V R 6V DC forward current per segment or DP
TDSO5150I F 25mA TDSO5160I F 25mA TDSY5150I F 25mA TDSY5160I F 25mA TDSG5150I F 25mA TDSG5160
I F 25mA Surge forward current per segment or DP
t p ≤ 10 μs (non repetitive)
TDSO5150
I FSM
0.15
A
TDSO5160I FSM 0.15A TDSY5150I FSM 0.15A TDSY5160I FSM 0.15A TDSG5150I FSM 0.15A TDSG5160
I FSM 0.15A Power dissipation T amb ≤ 45°C
P V 550mW Junction temperature T j 100°C Operating temperature range T amb - 40 to + 85°C Storage temperature range T stg - 40 to + 85
°C Soldering temperature t ≤ 3 sec, 2mm below seating plane T sd 260°C Thermal resistance LED junction/ambient
R thJA
100
K/W
Parameter
Test condition Symbol Min T yp.Max Unit Luminous intensity per segment (digit average)
1)
I F = 10 mA
I V 700μcd I V
700μcd
Dominant wavelength I F = 10 mA λd 612
625
nm Peak wavelength I F = 10 mA λp 630nm Angle of half intensity I F = 10 mA ?±50deg Forward voltage per segment or DP
I F = 20 mA V F 2
3
V Reverse voltage per segment or DP
I R = 10 μA
V R
615
V
TDSG / O / Y51..
Document Number 83126Rev. 1.5, 31-Aug-04
Vishay Semiconductors
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Yellow
TDSY5150/5160
Note 1) I Vmin and I V groups are mean values of all segments (a to g, D1 to D4),
matching factor within segments is ≥ 0.5, excluding decimal points and colon.
Green
TDSG5150/5160
Note 1) I Vmin and I V groups are mean values of all segments (a to g, D1 to D4),
matching factor within segments is ≥ 0.5, excluding decimal points and colon.
Typical Characteristics (T amb = 25 °C unless otherwise specified)
Parameter
Test condition
Symbol Min Typ.Max Unit Luminous intensity per segment (digit average) 1)
I F = 10 mA I V 700μcd I V
700μcd
Dominant wavelength I F = 10 mA λd 581
594
nm Peak wavelength I F = 10 mA λp 585nm Angle of half intensity I F = 10 mA ?±50deg Forward voltage per segment or DP
I F = 20 mA V F 2.43
V Reverse voltage per segment or DP
I R = 10 μA
V R
615
V
Parameter
Test condition
Symbol Min Typ.
Max
Unit Luminous intensity per segment (digit average) 1)
I F = 10 mA
I V
700
μcd
I V
700μcd Dominant wavelength I F = 10 mA λd 562
575
nm Peak wavelength I F = 10 mA λp 565nm Angle of half intensity I F = 10 mA ?±50deg Forward voltage per segment or DP
I F = 20 mA V F 2.43V Reverse voltage per segment or DP
I R = 10 μA
V R
615
V
Figure 1. Power Dissipation vs. Ambient Temperature 0
2004006008001000P -P o w e r D i s s i p a t i o n (m W )
V 100
8060402009511481
T amb -Ambient Temperature (°C )Figure 2. Forward Current vs. Ambient Temperature
010*********
20
40
60
80
I -F o r w a r d C u r r e n t (m A )
F T amb -Ambient Temperature (°C )
100
17525
50
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Document Number 83126
Rev. 1.5, 31-Aug-04
TDSG / O / Y51..
Vishay Semiconductors
Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 4. Forward Current vs. Forward Voltage Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 0.4
0.2
0.2
0.4
0.6
95100820.6
0.90.80°
°30°
102040°50°60°70°80°
0.7
1.0I -R e l a t i v e L u m i n o u s I n t e n s
i t y
V r e l °
I -F o r w a r d C u r r e n t (m A )
F 18794
V F -Forward V oltage (V )
10
8
6
4
2
0.0
0.20.40.60.81.01.21.41.60
102030405060708090100T amb -Ambient Temperature (°C )18795
I -R e l a t i v e L u m i n o u s I
n t e n s i t y
V r e l Figure 6. Specific Luminous Intensity vs. Forward Current
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 8. Relative Intensity vs. Wavelength
10
20501002000
0.40.81.21.62.4
18796
5000.5
0.2
0.1
0.05
0.02
1
I F (mA)t p /T
2.0I
-S p e c i f i c L u m i n o u s I n t e n s i t y
V r e l 1
10
0.01
0.1
1
10
I F -Forward Current (mA )
100
18797
I -R e
l a t i v e L u m i n o u s I n t e n s i t y
V r e l 590
61063065067000.20.40.60.81.2
690
17529
λ-W avelength (nm )
1.0I -R e l a t i v e I n t e n s i t y
r e l
TDSG / O / Y51..
Document Number 83126Rev. 1.5, 31-Aug-04
Vishay Semiconductors
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Figure 9. Forward Current vs. Forward Voltage Figure 10. Rel. Luminous Intensity vs. Ambient Temperature Figure 11. Specific Luminous Intensity vs. Forward Current
1
10
10
86420
9510030
V F -Forward Voltage (V )
I -F o r w a r d C u r r e n t (m A )
F 0
9510031
20
40
60
80
I -R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l T amb -Ambient Temperature (°C )
10
205010020000.40.81.21.62.417533
5000.5
0.2
0.1
0.05
0.02
1
I F (mA)t p /T
I
– S p e c i f i c L u m i n o u s I n t e n s i t y V r e
l 2.0Figure 12. Relative Luminous Intensity vs. Forward Current
Figure 13. Relative Intensity vs. Wavelength
Figure 14. Forward Current vs. Forward Voltage
I F -Forward Current (mA )
100
0.1
1
10
9510033
I -R e l a t i v e L u m i n o u s I n t e n s i t y
v r e l 10
1
550
5705906106300
0.20.40.60.81.2650
17530
l – Wavelength ( nm )
1.0
I – R e l a t i v e I n
t e n s i t y
r e l 0.11
10
100
1000
10
86420
9510034
V F -Forward Voltage (V )
I -F o r w a r d C u r r e n t (m A )
F
TDSG / O / Y51..
Vishay Semiconductors
TDSG / O / Y51..
Document Number 83126Rev. 1.5, 31-Aug-04
Vishay Semiconductors
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Package Dimensions in mm
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TDSG / O / Y51..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay Document Number: https://www.360docs.net/doc/1d3635468.html, Revision: 08-Apr-051
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.