BSH101中文资料

DATA SHEET

Product speciTcation

Supersedes data of 1997 Nov 28

File under Discrete Semiconductors, SC13b

2000Jul 19

DISCRETE SEMICONDUCTORS

BSH101

N-channel enhancement mode MOS transistor

andbook, halfpage

M3D088

MOS transistor

BSH101

FEATURES

?Very low threshold

?High-speed switching

?No secondary breakdown

?Direct interface to C-MOS, TTL etc.

APPLICATIONS

?Power management

?DC to DC converters

?Battery powered applications

?'Glue-logic'; interface between logic blocks and/or periphery

?General purpose switch.

DESCRIPTION

N-channel enhancement mode MOS transistor in a SOT23 SMD package.PINNING - SOT23

PIN SYMBOL DESCRIPTION

1g gate

2s source

3d drain

Fig.1 Simplified outline and symbol. handbook, halfpage

MAM273

Top view

QUICK REFERENCE DATA

SYMBOL PARAMETERS CONDITIONS MIN.MAX.UNIT V DS drain-source voltage (DC)?60V

V SD source-drain diode forward voltage V GD=0; I S=0.5A?1V

V GS gate-source voltage (DC)?±20V

V GSth gate-source threshold voltage V DS=V GS; I D=1mA1?V

I D drain current (DC)T s=80°C?0.7A

R DSon drain-source on-state resistance V GS=10V; I D=0.35A?0.81?

P tot total power dissipation T s=80°C?0.5W

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

MOS transistor

BSH101

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).Notes

1.T s is the temperature at the soldering point of the drain lead.

2.Pulse width and duty cycle limited by maximum junction temperature.

3.Device mounted on printed-circuit board with an R th a-tp (ambient to tie-point) of 27.5K/W.

4.Device mounted on printed-circuit board with an R th a-tp (ambient to tie-point) of 90K/W.

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.UNIT

V DS drain-source voltage (DC)?60V V GS gate-source voltage (DC)?±20V I D drain current (DC)T s =80°C; note 1?0.7A I DM peak drain current note 2? 2.8A

P tot

total power dissipation

T s =80°C

?0.5W T amb =25°C; note 3?0.75W T amb =25°C; note 4

?0.54W T stg storage temperature

?55+150°C T j operating junction temperature ?55+150°C Source-drain diode

I S source current (DC)T s =80°C ?0.5A I SM peak pulsed source current

note 2

Fig.2 Power derating curve.handbook, halfpage

160

0.6

0.2

00.4

MGM190

120

P tot (W)T S (°C)

Fig.3 SOAR.

δ=0.01; T s =80°C.(1)R DSon limitation.

handbook, halfpage

MGM191

10?3

10?2

10?1

102

10?1

V DS (V)

I DS (A)t p

t p

δ=DC

(1)

MOS transistor

BSH101

THERMAL CHARACTERISTICS SYMBOL PARAMETER

VALUE UNIT R th j-s

thermal resistance from junction to soldering point

140

K/W

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

(1)δ=1.(2)δ=0.75.(3)δ=0.5.(4)δ=0.33.(5)δ=0.2.(6)δ=0.1.

(7)δ=0.05.

(8)δ=0.02.

(9)δ=0.01.

(10)δ=0.

handbook, full pagewidth

103

102

110?6

10?5 10?410?310?210?1

MGM192

R th j-s (K/W)

t p (s)

(1)(2)(3)(4)(5)(6)

(7)

(8)(9)(10)

t p

t p T

δ =

BSH101 MOS transistor

CHARACTERISTICS

T j=25°C unless otherwise speciTed.

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT V(BR)DSS drain-source breakdown voltage V GS=0; I D=10μA60??V

V GSth gate-source threshold voltage V GS=V DS; I D=1mA1??V

I DSS drain-source leakage current V GS=0; V DS=48V??100nA

I GSS gate leakage current V GS=±20V; V DS=0??±100nA

R DSon drain-source on-state resistance V GS=10V; I D=0.35A??0.81?

V GS=4.5V; I D=0.175A??0.93?

C iss input capacitance V GS=0; V DS=48V; f=1MHz?72.2?pF

C oss output capacitance V GS=0; V DS=48V; f=1MHz?11.3?pF

C rss reverse transfer capacitance V GS=0; V DS=48V; f=1MHz? 3.6?pF

?2130?pC

Q G total gate charge V GS=10V; V DD=30V;

I D=0.35A; T amb=25°C

Q GS gate-source charge V DD=30V; I D=0.35A;

?150?pC

T amb=25°C

Q GD gate-drain charge V DD=30V; I D=0.35A;

?695?pC

T amb=25°C

Switching times

t d(on)turn-on delay time V GS=0to10V; V DD=30V;

? 3.5?ns

I D=0.35A; R gen=6?

t f fall time V GS=0to10V; V DD=30V;

? 3.5?ns

I D=0.35A; R gen=6?

t on turn-on switching time V GS=0to10V; V DD=30V;

?7?ns

I D=0.35A; R gen=6?

?9?ns

t d(off)turn-off delay time V GS=10to0V; V DD=30V;

I D=0.35A; R gen=6?

t r rise time V GS=10to0V; V DD=30V;

? 4.5?ns

I D=0.35A; R gen=6?

?13.5?ns

t off turn-off switching time V GS=10to0V; V DD=30V;

I D=0.35A; R gen=6?

Source-drain diode

V SD source-drain diode forward

V GD=0; I S=0.5A??1V voltage

t rr reverse recovery time I S=0.5A; di/dt=?10A/μs?35?ns

MOS transistor

BSH101

Fig.5 Switching times test circuit with input and output waveforms.

handbook, full pagewidth

MAM274

90 %

10 %

90 %

V in

V out

t d(on)

t on

t off

t f

t r

t d(off)

V DD

R L

V out

V in

Fig.6

Gate-source and drain-source voltages as functions of total gate charge; typical values.

V DD =30V; I D =0.35A; T amb =25°C.(1)V DS .(2)V GS.

handbook, halfpage

Q G (pC)

V GS (V)V DS (V)MGM196

(1)

(2)

024

810

150

329

525

725

917

1095

1273

1451

1629

1807

1985

2163

30Fig.7Output characteristics; typical values.

T amb =25°C; t p =300μs;δ=0.

(1)V GS =10V.

(2)V GS =8V.(3)V GS =6V.(4)V GS =5.5V.

(5)V GS =5V.(6)V GS =4.5V.(7)V GS =4V.(8)V GS =3.5V.(9)V GS =3V.

handbook, halfpage

MGM194

V DS (V)

I D (A)

(1)(2)(3)(4)(5)(6)

(8)

(9)

(7)

MOS transistor

BSH101

Fig.8 Transfer characteristic; typical values.V DS =10V; T amb =25°C; t p =300μs;δ=0.

handbook, halfpage

MGM195

34V GS (V)

I D (A)Fig.9

Capacitance as a function of drain-source voltage; typical values.

V GS =0; f =1MHz; T amb =25°C.

handbook, halfpage

160

120

010

MGM193

C (pF)V DS (V)

C iss

C oss C rss

Fig.10Source current as a function of source-drain

diode forward voltage; typical values.

V GD =0.

(1)T amb =150°C.(2)T amb =25°C.(3)T amb =?65°C.

handbook, halfpage

0.4

1.2

00.4

1.6

1.2

0.8

MGM197

0.8

V SD (V)

I S

(A)(3)

(2)

(1)

Fig.11Drain-source on-state resistance as a

function of gate-source voltage; typical values.

T amb =25°C; t p =300μs;δ=0.(1)I D =175mA.(2)I D =350mA.(3)I D =700mA.

(4)I D =1A.(5)I D =1.4A.(6)I D =2.8A.

handbook, halfpage

10?1

6240MGM198

(5)(4)

(3)(2)(1)(6)

R DSon (?)

V GS (V)

MOS transistor

BSH101

Fig.12Temperature coefficient of gate-source

threshold voltage as a function of junction temperature; typical values. V GSth at V DS =V GS ; I D =1mA.

k V GSth at T j

V GSth at 25°C

--------------------------------------=handbook, halfpage

?65

18500.4

MGM199

0.8

1.2

?153585135

T j (°C)

Fig.13Temperature coefficient of drain-source

on-resistance as a function of junction temperature; typical values.

(1)R DSon at V GS =10V; I D =350mA.(2)R DSon at V GS =4.5V; I D =170mA.

k R DSon at T j

R DSon at 25°C

-----------------------------------------=handbook, halfpage

?65

1852.0

00.4

MGM200

0.8

1.2

1.6

?153585135

T j (°C)

(2)

(1)(1)

MOS transistor

BSH101

PACKAGE OUTLINE

UNIT A 1max.b p c D E e 1H E L p Q w v REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE 97-02-28

IEC

JEDEC

EIAJ

0.1

0.480.38

0.150.09

3.02.8

1.41.2

0.95

e 1.9

2.52.1

0.550.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)0.450.15

SOT23

b p

D e 1

A 1

L p

detail X

H E

E w M v M A

B 01 2 mm

scale

A 1.10.9

Plastic surface mounted package; 3 leads

SOT23

MOS transistor

BSH101

DEFINITIONS LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the specification.

BSH101 MOS transistor

NOTES

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? Philips Electronics N.V. 1997

SCA56

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137107/00/02/pp12 Date of release: 1997Nov 28Document order number: 939775002963