STB75NF75中文资料

1/11

June 2003

NEW DATASHEET ACCORDING TO PCN DSG20023123 MARKING: P75NF75 @

STB75NF75

STP75NF75 STP75NF75FP

N-CHANNEL 75V - 0.0095 ? - 80A TO-220/TO-220FP/D2PAK

STripFET? II POWER MOSFET

s TYPICAL R DS (on) = 0.0095 ?

s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED

SURFACE-MOUNTING D 2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been de-signed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

s SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL s DC-DC CONVERTERS

s AUTOMOTIVE ENVIRONMENT TYPE V DSS R DS(on)I D STB75NF75STP75NF75STP75NF75FP

75 V 75 V 75 V

<0.011 ?<0.011 ?<0.011 ?

80 A 80 A 80 A(*)

ABSOLUTE MAXIMUM RATINGS

Pulse width limited by safe operating area.

(*) Refer to SOA for the max allowable current values on FP-type due to Rth value

(1) I SD ≤80A, di/dt ≤300A/μs, V DD ≤ V (BR)DSS , T j ≤ T JMAX (2) Starting T j = 25 o C, I D = 40A, V DD = 37.5V

Symbol

Parameter

Value

Unit

STB75NF75 STP75NF75

STP75NF75FP V DS Drain-source Voltage (V GS = 0)75V V DGR Drain-gate Voltage (R GS = 20 k ?)75V V GS Gate- source Voltage

± 20

V I D Drain Current (continuous) at T C = 25°C 8080(*)A I D Drain Current (continuous) at T C = 100°C 7070(*)A I DM (?)Drain Current (pulsed)

320320(*)A P tot Total Dissipation at T C = 25°C 30045W Derating Factor

2.0

0.3

W/°C dv/dt (1)Peak Diode Recovery voltage slope 12V/ns E AS (2)Single Pulse Avalanche Energy 700

mJ V ISO Insulation Withstand Voltage (DC)------2000V T stg Storage Temperature

-55 to 175

°C

T j

Operating Junction Temperature

STB75NF75 STP75NF75 STP75NF75FP

2/11

THERMAL DATA

ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFF

ON (*)

DYNAMIC

D 2PAK TO-220

TO-220FP Rthj-case Thermal Resistance Junction-case

Max 0.5

3.33

°C/W Rthj-amb

T l

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose ( 1.6 mm from case, for 10 sec.)

Max

62.5300

°C/W °C

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D = 250 μA, V GS = 0

V I DSS

Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

V DS = Max Rating T C = 125°C 110μA μA I GSS

Gate-body Leakage Current (V DS = 0)

V GS = ± 20 V

±100

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 μA 2

34V R DS(on)

Static Drain-source On Resistance

V GS = 10 V

I D = 40 A

0.0095

0.011

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (*)Forward Transconductance V DS = 15 V

I D =40 A

20S C iss C oss C rss

Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25V, f = 1 MHz, V GS = 0

3700730240

pF pF pF

3/11

STB75NF75 STP75NF75 STP75NF75FP

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(?)Pulse width limited by safe operating area.

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V DD = 37.5 V

I D = 45 A R G =4.7 ? V GS = 10 V (Resistive Load, Figure 3)2525ns ns Q

g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD = 60 V I D = 80 A V GS = 10V

1172747

160nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f

Turn-off Delay Time Fall Time

V DD = 37.5 V

I D

= 45 A R G =4.7 ? V GS = 10 V (Resistive Load, Figure 3)

6630

ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (?)Source-drain Current

Source-drain Current (pulsed)80320A A V SD (*)Forward On Voltage I SD = 80 A

V GS = 0

1.5

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD = 80 A

di/dt = 100A/μs V DD = 25 V T j = 150°C (see test circuit, Figure 5)

13266010

ns nC A

ELECTRICAL CHARACTERISTICS (continued)

STB75NF75 STP75NF75 STP75NF75FP

6/11

Fig. 3: Switching Times Test Circuits For Resistive

Fig. 5: Test Circuit For Inductive Load Switching

7/11

STB75NF75 STP75NF75 STP75NF75FP

DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181A1 2.49 2.690.0980.106

A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.95

9.35

0.352

0.368

D18

0.315

E 1010.4

0.394

0.409

E18.50.334

G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.4

3.2

0.094

0.126

R 0.4

0.016

0°8°

0°

8°

D 2PAK MECHANICAL DATA

STB75NF75 STP75NF75 STP75NF75FP

8/11

DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H210

10.40

0.393

0.409

L216.400.645L328.90

1.137

L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA

3.75

3.85

0.147

0.151

TO-220 MECHANICAL DATA

STB75NF75 STP75NF75 STP75NF75FP

10/11

DIM.

mm inch

MIN.MAX.MIN.MAX.

A010.510.70.4130.421

B015.715.90.6180.626

D 1.5 1.60.0590.063

D1 1.59 1.610.0620.063

E 1.65 1.850.0650.073

F11.411.60.4490.456

K0 4.8 5.00.1890.197

P0 3.9 4.10.1530.161

P111.912.10.4680.476

P2 1.9 2.100750.082

R50 1.574

T0.250.35.0.00980.0137

W23.724.30.9330.956

DIM.

mm inch

MIN.MAX.MIN.MAX.

A33012.992

B 1.50.059

C12.813.20.5040.520

D20.20.795

G24.426.40.960 1.039

N100 3.937

T30.4 1.197

BASE QTY BULK QTY

10001000

REEL MECHANICAL DATA

* on sales type

TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*

D2PAK FOOTPRINT

TAPE MECHANICAL DATA

STB75NF75 STP75NF75 STP75NF75FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

https://www.360docs.net/doc/1f7273355.html,

11/11