IRG4PC20UPBF;中文规格书,Datasheet资料
07/11/07
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IRG4PC20UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 97289
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Benefits
TO-247AC
G
C E C
PROVISIONAL
IRG4PC20UPbF
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PROVISIONAL
Pulse width ≤ 80μs; duty factor ≤ 0.1%. Pulse width 5.0μs, single shot.
Notes:
Repetitive rating; V GE = 20V, pulse width limited by
max. junction temperature.
V CC = 80%(V CES ), V GE = 20V, L = 10μH, R G = 50?. Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PC20UPbF
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PROVISIONAL
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
4
6
8
10
12
C
I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )GE
V , Gate-to-Emitter Voltage (V)0.1110
1000.1
1
10
CE
C
I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )
V , Collector-to-Emitter Voltage (V)05
10
15
20
25
0.1
1
10
100
f, Frequency (kHz)
L o a d C u r r e n t ( A )
IRG4PC20UPbF
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PROVISIONAL
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1.01.4
1.8
2.2
2.6
-60
-40
-20
20
40
60
80
100120140160
C E
V , C o l l e c t o r -t o -E m i t t e r V o l t a g e (V )
T , Junction Temperature (°C)J
02
4
6
8
10
12
14
25
50
75
100
125
150
M a x i m u m D C C o l l e c t o
r C u r r e n t (A )
T , Case Temperature (°C)C
0.01
0.1
1
10
0.00001
0.00010.0010.010.1110
t , Rectangular Pulse Duration (sec)1
t h J C
T h e r m a l R e s p o n s e (Z )
IRG4PC20UPbF
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PROVISIONAL
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage 0200
400
600800
1000
1
10
100
CE C , C a p a c i t a n c e (p F )
V , Collector-to-Emitter Voltage (V)
04
8
12
16
20
5
10
15
20
25
30
G E V , G a t e -t o -E m i t t e
r V o l t a g e (V )
g
Q , Total Gate Charge (nC)0.20
0.21
0.22
0.23
10
20
30
40
50
60
G
T o t a l S w i t c h i n
g L o s s e s (
m J )
R , Gate Resistance (?)
IRG4PC20UPbF
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PROVISIONAL
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
12
14
C
T o t a l S w i t c h i n g L o s s e s (m J )
I , Collector-to-Emitter Current (A)
0.1
1
10
100
1000
1
10
100
1000
C
CE
V , Collector-to-Emitter Voltage (V)I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )
IRG4PC20UPbF
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PROVISIONAL
480V
X C @
* Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
=
ts on off
E = (E +E )Fig. 14b - Switching Loss
Waveforms
Fig. 14a - Switching
Loss Test Circuit
* Driver same type as D.U.T., VC = 480V
Qualification Standards can be found on IR’s Web site. 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at https://www.360docs.net/doc/2017207018.html, for sales contact information. 07/07
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IRG4PC20UPBF