IRF3205
IRF3205
HEXFET ? Power MOSFET
01/25/01
Absolute Maximum Ratings Parameter
Typ.Max.Units R θJC
Junction-to-Case –––0.75R θCS
Case-to-Sink, Flat, Greased Surface 0.50–––°C/W
R θJA
Junction-to-Ambient –––62Thermal Resistance
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Advanced HEXFET ?applications.
to its wide acceptance throughout the industry.l
Advanced Process Technology l
Ultra Low On-Resistance l
Dynamic dv/dt Rating l
175°C Operating Temperature l
Fast Switching l Fully Avalanche Rated Description Parameter
Max.Units I D @ T C = 25°C
Continuous Drain Current, V
GS @ 10V 110 I D @ T C = 100°C
Continuous Drain Current, V GS @ 10V 80A I DM
Pulsed Drain Current 390P D @T C = 25°C
Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS
Gate-to-Source Voltage ± 20V I AR
Avalanche Current 62A E AR
Repetitive Avalanche Energy 20mJ dv/dt
Peak Diode Recovery dv/dt 5.0V/ns T J
Operating Junction and -55 to + 175T STG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew 10 lbf ?in (1.1N ?m)PD-91279E
IRF3205
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Source-Drain Ratings and Characteristics
Starting T J = 25°C, L = 138μH
R G = 25?, I AS = 62A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes: I SD ≤ 62A, di/dt ≤ 207A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C Pulse width ≤ 400μs; duty cycle ≤ 2%.Electrical Characteristics @ T
= 25°C (unless otherwise specified)
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T J = 175°C.
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Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics
Vs. Temperature
IRF3205
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Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area 110100
V DS , Drain-to-Source Voltage (V)0100020003000400050006000C ,
C
a
p
a
c i
t
a
n
c e
(p
F
)
IRF3205
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Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a.
Switching Time Test Circuit V V d(on)r d(off)f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
DD
IRF3205
6
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DS Current Sampling Resistors 10 V
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
I A S
Vs. Drain Current V D D
R
IRF3205
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Fig 14. For N-Channel HEXFETS
* V GS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
V DD
IRF3205
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LE A D A S S IG N M E N TS 1 - G A TE 2 - DR A IN
3 - S O U R C E
4 - DR A IN - B -1.32 (.052)1.22 (.048)3X 0.5
5 (.022)0.4
6 (.018)2.92 (.115)2.64 (.104)
4.69 (.185)4.20 (.165)3X
0.93 (.037)0.69 (.027)4.06 (.160)
3.55 (.140)
1.15 (.045)
M IN
6.47 (.255)
6.10 (.240)3.78 (.149)3.54 (.139)
- A -
10.54 (.415)10.29 (.405)2.87 (.113)
2.62 (.103)15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3N O TE S : 1 D IME N S IO N IN G & TO LE R A N C ING P E R A N S I Y 14.5M , 1982. 3 O U TLIN E C O N F O R MS TO JE D E C O U T LIN E T O -220A B.
2 C O N TR O LLING D IM E N S IO N : INC H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S.
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PAR T N UM BER INTE RN A TION
R E CTIFIE R
LO G O
E XA M P LE : TH IS IS A N IR F1010
W ITH A S S E M B LY
LO T C O DE 9B 1M A S S E M B L Y
LO T CO D D A TE CO D E (YYW W )
YY = YE A R
W W
= W E
E K
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR ’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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