STS10DN3LH5;中文规格书,Datasheet资料

May 2009Doc ID 15624 Rev 11/13

STS10DN3LH5

Dual N-channel 30 V , 0.019 ?, 10 A, SO-8

STripFET? V Power MOSFET

■R DS(on) * Q g industry benchmark ■Extremely low on-resistance R DS(on)■Very low switching gate charge ■High avalanche ruggedness ■

Low gate drive power losses

Application

■

Switching applications

Description

This STripFET?V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Features

Type V DSS R DS(on) max I D STS10DN3LH5

30 V

0.021 ?

10 A

Table 1.Device summary

Order codes Marking Package Packaging STS10DN3LH5

10DD3L

SO-8

Tape and reel

https://www.360docs.net/doc/3810070895.html,

Contents STS10DN3LH5

Contents

1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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STS10DN3LH5Electrical ratings

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1 Electrical ratings

Table 2.

Absolute maximum ratings

Symbol Parameter

Value Unit V DS Drain-source voltage (V GS = 0)30V V GS Gate-Source voltage

± 22V I D (1)1.Limited by wire bonding

Drain current (continuous) at T C = 25 °C 10A I D Drain current (continuous) at T C = 100 °C 7A I DM (2)2.Pulse width limited by safe operating area Drain current (pulsed)40A P TOT T otal dissipation at T C = 25 °C 2.5W Derating factor

0.02W/°C E AS (3)3.Starting T J = 25 °C, I D = 21 A, L= 0.2 mH

Single pulse avalanche energy 50mJ T J

T stg

Operating junction temperature Storage temperature

- 55 to 150

°C

Table 3.

Thermal resistance

Symbol Parameter

Value Unit R thJC Thermal resistance junction-case max 50°C/W R thJA Thermal resistance junction-case max 100°C/W T J

Maximum lead temperature for soldering purpose

275

°C

Electrical characteristics STS10DN3LH5

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2 Electrical characteristics

(T CASE = 25 °C unless otherwise specified)Table 4.

Static

Symbol Parameter Test conditions

Min.Typ.Max.Unit V (BR)DSS Drain-source

breakdown Voltage

I D = 250 μA, V GS = 0

V I DSS

Zero gate voltage

drain current (V GS = 0)V DS = 30 V V DS = 30 V , Tc = 125 °C 110

μA μA I GSS Gate body leakage current (V DS = 0)

V GS = ± 22 V

±100

nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 μA 1

R DS(on)

Static drain-source on resistance V GS = 10 V , I D = 5 A 0.0190.021?V GS = 4.5 V , I D = 5 A

0.023

0.028

Table 5.

Dynamic

Symbol Parameter Test conditions

Min

Typ.Max.

Unit C iss

C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V , f = 1 MHz, V GS = 0

-4759719-

pF pF pF Q g Q gs Q gd T otal gate charge Gate-source charge Gate-drain charge

V DD = 15 V , I D = 10 A V GS = 5 V (Figure 14)

- 4.61.71.9-

nC nC nC Q gs1Q gs2

Pre V th gate-to-source

charge

Post V th gate-to-source charge

V DD = 15 V , I D = 10A

V GS = 5 V

(Figure 19)-0.670.84

-nC

R G

Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain

- 2.5-?

STS10DN3LH5Electrical characteristics

Doc ID 15624 Rev 15/13

Table 6.

Switching on/off (resistive load)

Symbol Parameter

Test conditions Min.

Typ.Max.

Unit t d(on)t r Turn-on delay time Rise time

V DD = 15 V , I D = 5 A, R G = 4.7 ?, V GS = 10 V (Figure 13 and Figure 18)-422

ns ns

t d(off)t f

Turn-off delay time Fall time V DD = 15 V , I D = 5 A, R G = 4.7 ?, V GS = 10 V (Figure 13 and Figure 18)

-132.8

ns ns

Table 7.

Source drain diode

Symbol Parameter

Test conditions

Min.Typ.

Max.Unit I SD I SDM (1)1.Pulsed: pulse duration = 300 μs, duty cycle 1.5 %

Source-drain current Source-drain current (pulsed)

-1040A A V SD Forward on voltage I SD = 5 A, V GS = 0- 1.1

V t rr Q rr I RRM

Reverse recovery time Reverse recovery charge Reverse recovery current

I SD = 10 A, V DD = 25 V di/dt = 100 A/μs, (Figure 15)

16.27.81ns nC A

Electrical characteristics STS10DN3LH5

2.1 Electrical characteristics (curves)

Figure 2.Safe operating area Figure 3.Thermal impedance

Figure 4.Output characteristics Figure 5.Transfer characteristics

Figure 6.Normalized BV DSS vs temperature Figure 7.Static drain-source on resistance

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STS10DN3LH5Electrical characteristics

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Figure 8.

Gate charge vs gate-source voltage Figure 9.

Capacitance variations

Figure 10.Normalized gate threshold voltage

Figure 11.Normalized on resistance vs

Figure 12.Source-drain diode forward

Test circuits STS10DN3LH5

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3 Test circuits

Figure 13.Switching times test circuit for

Figure 14.Gate charge test circuit

Figure 15.Test circuit for inductive load

Figure 16.Unclamped inductive load test

Figure 17.Unclamped inductive waveform

Figure 18.Switching time waveform

STS10DN3LH5Test circuits Figure 19.Gate charge waveform

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Package mechanical data STS10DN3LH5 4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK? packages, depending on their level of environmental compliance. ECOPACK?

specifications, grade definitions and product status are available at: https://www.360docs.net/doc/3810070895.html,. ECOPACK

is an ST trademark.

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分销商库存信息: STM

STS10DN3LH5