TFDU6103

TFDU6103
TFDU6103

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

Vishay Semiconductors

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1

20110

Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation

Description

The TFDU6103 is a low-power infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication,supporting IrDA speeds up to 4.0 Mbit/s (FIR), and carrier based remote control modes up to 2 MHz.Integrated within the transceiver module are a PIN photodiode, an infrared emitter (IRE D), and a low-power CMOS control IC to provide a total front-end solution in a single package.

Vishay FIR transceivers are available in different package options, including this BabyFace package (TFDU6103). This wide selection provides flexibility for a variety of applications and space constraints.The transceivers are capable of directly interfacing with a wide variety of I/O devices which perform the

modulation/demodulation function, including National Semiconductor’s PC87338, PC87108 and PC87109,SMC’s FDC37C669, FDC37N769 and CAM35C44,and Hitachi’s SH3. TFDU6103 has a tri-state output and is floating in shut-down mode with a weak pull-up.

Features

?Supply voltage 2.4 V to 5.5 V, operating idle current (receive mode) < 3.3 mA, shutdown current < 1 μA over full temperature range ?Surface mount package, top and side view, 9.7 mm x 4.7 mm x 4.0 mm

?Operating temperature - 25°C to 85°C

?Transmitter wavelength typ. 886 nm, supporting IrDA ? and remote control

?IrDA ? compliant, link distance > 1 m, ± 15°,window losses are allowed to still be inside the IrDA ? spec.

?Remote control range > 8 m, typ. 22 m ?ESD > 1 kV

?Latchup > 100 mA

?EMI immunity > 550 V/m for GSM frequency and other mobile telephone bands/

(700 MHz to 2000 MHz, no external shield) ?Split power supply, LE D can be driven by a separate power supply not loading the regulated supply. U.S. Pat. No. 6,157,476

?Tri-state-receiver output, floating in shut down with a weak pull-up

?Eye safety class 1 (IEC 60825-1, ed. 2001), limited LED on-time, LED current is controlled, no single fault to be considered ?Lead (Pb)-free device

?Qualified for lead (Pb)-free and Sn/Pb processing (MSL4)

?Device in accordance with RoHS 2002/95/EC and WEEE 2002/96EC

Applications

? Notebook computers, desktop PCs, Palmtop computers (Win CE, Palm PC), PDAs ? Digital still and video cameras

? Printers, fax machines, photocopiers, screen projectors

? Telecommunication products (cellular phones, pagers)

? Internet TV boxes, video conferencing systems ? External infrared adapters (dongles)? Medical an industrial data collection

Parts Table

Part

Description

Qty/reel TFDU6103-TR3Oriented in carrier tape for side view surface mounting 1000 pcs TFDU6103-TT3

Oriented in carrier tape for top view surface mounting

1000 pcs

https://www.360docs.net/doc/4b1025871.html, 2Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors Functional Block Diagram

Pinout TFDU6103 weight 200 mg Definitions:

In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.A new version of the standard in any case obsoletes the former version.

Note: We apologize to use sometimes in our documentation the abbreviation LE D and the word Light E mitting Diode instead of Infrared Emitting Diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend.

Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time.

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

Vishay Semiconductors

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Pin Description

Absolute Maximum Ratings

Reference point Ground Pin 8, unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Eye safety information

Reference point Pin: GND unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Pin number

Function Description

I/O

Active

1V CC2IRED Anode Connect IRED anode directly to V CC2. For voltages higher than 3.6 V an external

resistor might be necessary for reducing the internal power dissipation.

An unregulated separate power supply can be used at this pin.

2IRED Cathode IRED cathode, internally connected to driver transistor

3

TXD

This input is used to transmit serial data when SD is low. An on-chip protection circuit disables the LED driver if the TXD pin is asserted for longer than 100 μs. When used in conjunction with the SD pin, this pin is also used to set receiver speed mode.I

High

4RXD Received Data Output, push-pull CMOS driver output capable of driving a standard CMOS or TTL load. No external pull-up or pull-down resistor is required. Floating with

a weak pull-up of 500 k Ω (typ.) in shutdown mode.O Low

5SD Shutdown, also used for dynamic mode switching. Setting this pin active places the module into shutdown mode. On the falling edge of this signal, the state of the TXD pin is sampled and used to set receiver low bandwidth (TXD = Low, SIR) or high bandwidth

(TXD = High, MIR and FIR) mode.

I High

6V CC1Supply voltage

7NC 8

GND

Ground

Parameter

Test conditions Symbol Min.Typ.

Max.Unit Supply voltage range, transceiver

0 V < V CC2 < 6 V V CC1- 0.5+ 6V Supply voltage range, transmitter 0 V < V CC1 < 6 V

V CC2

- 0.5

+ 6.5V Input currents For all pins, except IRED anode

pin

10mA Output sinking current 25mA Power dissipation See derating curve, figure 5

P D 500mW Junction temperature T J 125°C Ambient temperature range (operating)

T amb - 25+ 85°C Storage temperature range T stg

- 25

+ 85°C Soldering temperature See recommended solder profile (see figure 4)

260°C Average output current I IRED (DC)125mA Repetitive pulse output current < 90 μs, t on < 20 %I IRED (RP)600mA IRED anode voltage

V IREDA - 0.5

+ 6.5V Voltage at all inputs and outputs

V in > V CC1 is allowed V IN

5.5

V

Parameter

Test conditions Symbol Min.Typ.Max.

Unit Virtual source size

Method: (1 - 1/e) encircled

energy

d

2.5

2.8

mm

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Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors

Electrical Characteristics Transceiver

T amb = 25°C, V CC1 = V CC2 = 2.4 V to 5.5 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Note:

1)The typical threshold level is 0.5 x V CC1 (V CC1 = 3 V) . It is recommended to use the specified min/max values to avoid increased

operating current

Laser/LED safety information

With the edition IE C/E N 60825-1:2006 LE Ds were removed from the basic laser eye safety standard but are still covered by DIN EN 60825-12 (VDE 0837-12):2004-12 (or equivalent IEC standard). Therefore still a risk assessment is necessary according the test conditions of the basic standard, which were changed in respect to the former editions.

We recommend using the so-called simplified method not taking the virtual source size into account.

Our devices are tested for not to exceed the given eye safety limit according class 1 using the simplified assessment with C6 = 1.(When the virtual source size would be taken into account, the safety limit is even higher.)

LEDs for communication applications are covered by the following safety regulations:

IEC/EN 60825-1:2006, DIN EN 60825-12 (VDE 0837-12):2004-12, see above IEC 62471 Ed. 1:2006, “Photobiological Safety of Lamps and Lamp Systems": TFDU6301 is in the "Exempt Group"

"DIRECTIVE 2006/25/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 5. April 2006" on the minimum health and safety requirements regarding the exposure of workers to risks arising from physical agents (artificial optical radiation) (19th individual Directive within the meaning of Article 16 (1) of Directive 89/391/EEC): TFDU6301 is in accordance with this regulation.

Parameter

T est conditions

Symbol Min.T yp.

Max.Unit Supply voltage

V CC

2.4

5.5

V

Dynamic supply current

Receive mode only, idle

In transmit mode, add additional 85 mA (typ) for IRED current.

Add RXD output current depending on RXD load.

SIR mode I CC 1.8 3.0mA MIR/FIR mode

I CC 2.0 3.3

mA Shutdown supply current

SD = High

T = 25°C, not ambient light sensitive, detector is disabled in

shutdown mode I SD

0.01

μA

SD = High, full specified temperature range, not ambient

light sensitive

I SD 1μA Operating temperature range T A - 25+ 85°C Input voltage low (TXD, SD)V IL

- 0.50.5V Input voltage high (TXD, SD)

CMOS level 1)V IH V CC - 0.36V Input leakage current (TXD, SD)

V in = 0.9 x V CC1

I ICH - 1

+ 1μA Input capacitance, TXD, SD C I 5pF Output voltage low I OL = 500 μA, C load = 15 pF V OL 0.4

V Output voltage high

I OH = 250 μA, C load = 15 pF

V OH

0.9 x V CC1

V Output RXD current limitation high state low state

Short to ground Short to V CC12020

mA mA SD shutdown pulse duration Activating shutdown 30

μs RXD to V CC1 impedance R RXD 400500

600

k ΩSD mode programming pulse duration

All modes

t SDPW

200

ns

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

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Optoelectronic Characteristics Receiver

T amb = 25°C, V CC = 2.4 V to 5.5 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Note:

All timing data measured with 4 Mbit/s are measured using the IrDA ? FIR transmission header. The data given here are valid 5 μs after starting the preamble.

1)This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent

lamps

2)IrDA sensitivity definition: Minimum Irradiance E e In Angular Range , power per unit area. The receiver must meet the BER

specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length

3)Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the

maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER). 4)Retriggering once during applied optical pulse may occur

For more definitions see the document "Symbols and Terminology" on the Vishay Website (https://www.360docs.net/doc/4b1025871.html,/doc?82512).

Parameter

Test conditions Symbol Min.T yp.Max.Unit Minimum irradiance E e in angular range 2) SIR mode 9.6 kbit/s to 115.2 kbit/s λ = 850 nm to 900 nm E e 25(2.5)35(3.5)

mW/m 2 (μW/cm 2)Minimum irradiance E e in angular range, MIR mode 1.152 Mbit/s

λ = 850 nm to 900 nm E e 65(6.5)mW/m 2 (μW/cm 2)

Minimum irradiance E e inangular range, FIR mode 4.0 Mbit/s

λ = 850 nm to 900 nm E e 80(8.0)90(9.0)

mW/m 2 (μW/cm 2)Maximum irradiance E e in angular range 3)

λ = 850 nm to 900 nm

E e 5(500)

kW/m 2 (mW/cm 2)Maximum no detection irradiance

1)

E e 4(0.4)mW/m 2 (μW/cm 2)

Rise time of output signal 10 % to 90 %, 15 pF t r (RXD)1040ns Fall time of output signal 90 % to 10 %, 15 pF

t f (RXD)10

40

ns RXD pulse width of output signal, 50 %, SIR mode Input pulse length, 1.4 μs < P Wopt < 25 μs t PW 2.1

μs Input pulse length, 1.4 μs < P Wopt < 25 μs,

- 25°C < T < 85°C 4)

t PW 1.5 1.8 2.6μs RXD pulse width of output signal, 50 %, MIR mode Input pulse length, P Wopt = 217 ns,

1.152 Mbit/s t PW 110250

270ns RXD pulse width of output signal, 50 %, FIR mode

Input pulse length, P Wopt = 125 ns,

4.0 Mbit/s t PW 100140ns Input pulse length, P Wopt = 250 ns,

4.0 Mbit/s t PW

225

275ns Stochastic jitter, leading edge

Input irradiance = 100 mW/m 2, 4.0 Mbit/s 20ns Input irradiance = 100 mW/m 2, 1.152 Mbit/s

40ns Input irradiance = 100 mW/m 2, 576 kbit/s 80ns Input irradiance = 100 mW/m 2,

≤ 115.2 kbit/s

350ns Receiver start up time After completion of shutdown programming

sequence power on delay

250μs Latency

t L

40

100

μs

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Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors Transmitter

T amb = 25°C, V CC1 = V CC2 = 2.4 V to 5.5 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Note:

1)Maximum value is given by eye safety class 1, IEC 60825-1, simplified method.

2)Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the

standard Remote Control applications with codes as e.g. Philips RC5/RC6?

or RE CS 80. When operated under IrDA full range conditions (125 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers are used.

Parameter

T est conditions

Symbol Min.Typ.Max.Unit IRED operating current, switched current limiter

Note: No external resistor current limiting resistor is needed for V CC1

= V CC2 = 3.3 V

I D 330

440600

mA Output pulse width limitation Input pulse width t < 20 μs

t pw t

μs Input pulse width 20 μs < t < 150 μs

t pw 18150μs Input pulse width t ≥ 150 μs

t pw_lim 150μs Output leakage IRED current I IRED - 11μA Output radiant intensity, see figure 3, recommended application circuit

V CC = V IRED = 3.3 V , α = 0°TXD = High, SD = Low, R1 = 1 Ω I e

110

170

4681)mW/sr

Output radiant intensity, see figure 3, recommended application circuit V CC = V IRED = 3.3 V, α = 0°, 15°TXD = High, SD = Low, R1 = 1 Ω I e 100130

4681)

mW/sr

Output radiant intensity V CC1 = 3.3 V, α = 0°, 15°

TXD = Low or SD = High (Receiver is inactive as long as SD = High)I e 0.04mW/sr Output radiant intensity, angle of half intensity

α± 24°

Peak - emission wavelength 2)λp 875

886900nm Spectral bandwidth Δλ45

nm

Optical rise time, Optical fall time

t ropt ,t fopt 1040ns Optical output pulse duration

Input pulse width 217 ns,

1.152 Mbit/s

t opt 207217227ns Input pulse width 125 ns,

4.0 Mbit/s t opt 117125133ns Input pulse width 250 ns,

4.0 Mbit/s

t opt

242

250

258ns Optical overshoot

25

%

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

Vishay Semiconductors

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Recommended Circuit Diagram

Vishay Semiconductors transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (TXD, SD) and the output RXD should be directly (DC) coupled to the I/O circuit.

The capacitor C1 is buffering the supply voltage and

reduces the influence of the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is only necessary for

higher operating voltages and elevated temperatures,see derating curve in figure 5, to avoid too high internal power dissipation.

The capacitors C2 and C3 combined with the resistor R2 (as the low pass filter) is smoothing the supply voltage V CC1. R2, C1, C2, and C3 are optional and dependent on the quality of the supply voltages V CC1and V CC2 and injected noise. An unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 and C3 as close as possible to the transceiver power supply pins. An Tantalum capacitor should be used for C1and C3 while a ceramic capacitor is used for C2.In addition, when connecting the described circuit to the power supply, low impedance wiring should be used.

When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at V CC2. Often some power supplies are not apply to follow the fast current is rise time. In that case another 4.7 μF (type, see table under C1) at V CC2 will be helpful.

Keep in mind that basic RF-design rules for circuit design should be taken into account. E specially longer signal lines should not be used without termination. See e.g. "The Art of E lectronics" Paul Horowitz, Wienfield Hill, 1989, Cambridge University Press, ISBN: 0521370957.

Table 1.

Recommended Application Circuit Components

Figure

1. Recommended Application Circuit

Component Recommended value

Vishay part number C1, C3 4.7 μF , 16 V 293D 475X9 016B C20.1 μF , Ceramic

VJ 1206 Y 104 J XXMT R1 3.3 V supply voltage: no resistors necessary, the internal

controller is able to control the current

e.g. 2 x CRCW-1206-1R0-F-RT1R2

10 Ω, 0.125 W

CRCW-1206-10R0-F-RT1

https://www.360docs.net/doc/4b1025871.html, 8Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors I/O and Software

In the description, already different I/Os are men-tioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. Mode Switching

The TFDU6103 is in the SIR mode after power on as a default mode, therefore the FIR data transfer rate has to be set by a programming sequence using the TXD and SD inputs as described below. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower frequency data can also be received in the high frequency mode but with reduced sensitivity.

To switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required.

Setting to the High Bandwidth Mode

(0.576 Mbit/s to 4.0 Mbit/s)

1. Set SD input to logic "High".

2. Set TXD input to logic "High". Wait t s≥ 200 ns.

3. Set SD to logic "Low" (this negative edge latches state of TXD, which determines speed setting).

4. After waiting t h≥ 200 ns TXD can be set to logic "Low". The hold time of TXD is limited by the maximum allowed pulse length.

After that TXD is enabled as normal TXD input and the transceiver is set for the high bandwidth (576 kbit/s to 4 Mbit/s) mode.Setting to the Lower Bandwidth Mode (2.4 kbit/s to 115.2 kbit/s)

1. Set SD input to logic "High".

2. Set TXD input to logic "Low". Wait t s≥ 200 ns.

3. Set SD to logic "Low" (this negative edge latches state of TXD, which determines speed setting).

4. TXD must be held for t h≥ 200 ns.

After that TXD is enabled as normal TXD input and the transceiver is set for the lower bandwidth (9.6 kbit/s to 115.2 kbit/s) mode.

Note:

When applying this sequence to the device already in the lower bandwidth mode, the SD pulse is interpreted as shutdown. In this case the RXD output of the transceiver may react with a single pulse (going active low) for a duration less than 2 μs. The operating software should take care for this condition.

In case the applied SD pulse is longer than 4 μs, no RXD pulse is to be expected but the receiver startup time is to be taken into account before the device is in receive condition.

Table 2. Truth table

Figure

2. Mode Switching Timing Diagram Inputs Outputs

SD TXD Optical input irradiance mW/m2RXD Transmitter

High x x

Weakly pulled

(500 kΩ) to V CC1

Low

High x Low (active)I e High > 150 μs x High0 Low< 4High0

Low

> Min. irradiance E e

< Max. irradiance E e

Low (active)0 Low> Max. irradiance E e x0

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

Vishay Semiconductors

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9

Recommended Solder Profiles

Solder Profile for Sn/Pb Soldering

Lead (Pb)-Free, Recommended Solder Profile The TFDU6103 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)-free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9)Cu, there are two standard reflow profiles:Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS).The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation.With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 4 and 5 are VISHAY's recommended profiles for use with the TFDU6103 transceivers. For more details please refer to the application note “SMD Assembly Instructions”

(https://www.360docs.net/doc/4b1025871.html,/doc?82602).

A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC.Wave Soldering

For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended.

Manual Soldering

Manual soldering is the standard method for lab use.However, for a production process it cannot be recommended because the risk of damage is highly dependent on the experience of the operator.Nevertheless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering.

Storage

The storage and drying processes for all VISHAY transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4.

The data for the drying procedure is given on labels

on the packing and also in the application note "Taping, Labeling, Storage and Packing"(https://www.360docs.net/doc/4b1025871.html,/doc?82601).

Current Derating Diagram

Figure 6 shows the maximum operating temperature when the device is operated without external current limiting resistor. A power dissipating resistor of 2 Ω is recommended from the cathode of the IRE D to Ground for supply voltages above 4 V. In that case the device can be operated up to 85°C, too.

Figure 3. Recommended Solder Profile for Sn/Pb soldering

Figure 4. Solder Profile, RSS Recommendation

Figure 5. RTS Recommendation

Figure

6. Temperature Derating Diagram

https://www.360docs.net/doc/4b1025871.html, 10Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors

Package Dimensions in mm

Figure7. Package drawing and solder footprints for top and side view mounting TFDU6103, dimensions in mm, tolerance ± 0.2 mm if not

otherwise mentioned

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

Vishay Semiconductors

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11

Reel Dimensions

in mm

T ape width

A max.N W 1 min.W 2 max.W 3 min.W 3 max.mm mm mm mm mm mm mm 24

330

60

24.4

30.4

23.9

27.4

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Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors Tape Dimensions in mm

Figure

8. Tape Drawing, TFDU6103 for Top View Mounting, Tolerance ± 0.1 mm

TFDU6103

Document Number 81211Rev. 1.3, 03-Jul-08

Vishay Semiconductors

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Tape Dimensions in mm

Figure

9. Tape Drawing, TFDU6103 for Side View Mounting, Tolerance ± 0.1 mm

https://www.360docs.net/doc/4b1025871.html, 14Document Number 81211

Rev. 1.3, 03-Jul-08

TFDU6103

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively.

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA.

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000

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Revision: 18-Jul-08

1

Disclaimer

Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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