T4xx-yyyB中文资料

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T4 Series

SNUBBERLESS ? & LOGIC LEVEL

4A TRIAC S

June 2003 - Ed: 5

MAIN FEATURES:

DESCRIPTION

Based on ST’s Snubberless / Logic level technolo-gy providing high commutation performances, the T4 series is suitable for use on AC inductive loads.They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,...

Available in a fully insulated package, the T4...-...W version complies with UL standards (ref.E81734).

Symbol Value Unit I T(RMS)4A V DRM /V RRM 600 to 800V I GTT (Q 1)

5 to 35

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit I T(RMS)

RMS on-state current (full sine wave)

DPAK / IPAK TO-220AB Tc = 110°C 4

ISOWATT 220AB

Tc = 105°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 30A

F = 60 Hz

t = 16.7 ms

31I 2t I 2t Value for fusing

tp = 10 ms

5.1

A 2s dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50A/μs I GM Peak gate current

tp = 20 μs

Tj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C

1W T stg T j

Storage junction temperature range Operating junction temperature range

- 40 to + 150- 40 to + 125

°C

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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

STATIC CHARACTERISTICS

Note 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1

THERMAL RESISTANCES

S = Copper surface under tab

Symbol Test Conditions

Quadrant

T4Unit

T405

T410T435I GT (1)V D = 12 V R L = 30 ?I - II - III MAX.5

1035

mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 33 k ?Tj = 125°C I - II - III

MIN.0.2V I H (2)I T = 100 mA MAX.101535mA I L I G = 1.2 I GT

I - III MAX.

102550mA II

153060dV/dt (2)

V D = 67 %V DRM gate open Tj = 125°C MIN.2040400V/μs (dI/dt)c (2)(dV/dt)c = 0.1 V/μs Tj = 125°C

MIN.

1.8

2.7-A/ms

(dV/dt)c = 10 V/μs Tj = 125°C 0.9 2.0-Without snubber Tj = 125°C

-- 2.5

Symbol Test Conditions

Value Unit V TM (2)I TM = 5.5 A tp = 380 μs Tj = 25°C MAX. 1.6V V to (2)Threshold voltage Tj = 125°C MAX.0.9V R d (2)Dynamic resistance Tj = 125°C MAX.120m ?I DRM I RRM

V DRM = V RRM

Tj = 25°C MAX.

5μA Tj = 125°C

Symbol Parameter

Value Unit R th(j-c)

Junction to case (AC)

DPAK IPAK TO-220AB 2.6°C/W

ISOWATT220AB

4.0R th(j-a)

Junction to ambient

S = 0.5 cm 2

DPAK 70°C/W

TO-220AB ISOWATT220AB

60IPAK

100

T4 Series

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PRODUCT SELECTOR

ORDERING INFORMATION

OTHER INFORMATION

Note: xx = sensitivity, yyy = voltage

Part Number

Voltage (xxx)Sensitivity

Type

Package

600 V

700 V 800 V T405-xxxB X X X 5 mA Logic level DPAK T405-xxxH X X X 5 mA Logic level IPAK T405-xxxT X X X 5 mA Logic level TO-220AB T405-xxxW X X X 5 mA Logic level ISOWATT220AB

T410-xxxB X X X 10 mA Logic level DPAK T410-xxxH X X X 10 mA Logic level IPAK T410-xxxT X X

X 10 mA Logic level TO-220AB T410-xxxW X X X 10 mA Logic level ISOWATT220AB

T435-xxxB X X X 35 mA Snubberless DPAK T435-xxxH X X X 35 mA Snubberless IPAK T435-xxxT X X X 35 mA Snubberless TO-220AB T435-xxxW

35 mA

Snubberless

ISOWATT220AB

Part Number

Marking

Weight Base quantity Packing mode T4xx-yyyB T4xxyyyB 0.3 g 75Tube T4xx-yyyB-TR T4xxyyyB 0.3 g 2500Tape & reel T4xx-yyyH T4xxyyy 0.4 g 75Tube T4xx-yyyT T4xxyyyT 2.3 g 50Tube T4xx-yyyW

T4xxyyyW

2.1 g

Tube

T4 Series

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Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).

Fig. 2-1: RMS on-state current case versus tem-perature (full cycle).

Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit FR4, copper thick-ness: 35μm),full cycle.

Fig. 3: Relative variation of thermal impedance versus pulse duration.

Fig. 4: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).

Fig. 5: Surge peak on-state current versus number of cycles.

T4 Series

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Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I2t.

Fig. 7: On-state characteristics (maximum values).

Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).

Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.

Fig. 10: DP AK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35μm).

T4 Series

PACKAGE MECHANICAL DATA

FOOTPRINT DIMENSIONS (in millimeters)

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T4 Series PACKAGE MECHANICAL DATA

PACKAGE MECHANICAL DATA

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T4 Series

PACKAGE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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