2SK3019TL;中文规格书,Datasheet资料
Transistor
Rev.C 1/3
2.5V Drive Nch MOS FET
2SK3019
z Structure
Silicon N-channel MOSFET
z Applications
Interfacing, switching (30V , 100mA)
z Features
1) Low on-resistance. 2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for portable equipment.
4) Drive circuits can be simple. 5) Parallel use is easy . z Dimensions (Unit : mm)
z Packaging specifications
TL 3000
2SK3019
Type
Package
Code
Basic ordering unit (pieces)
Taping
z Absolute maximum ratings (T a=25°C)
Parameter
Drain-source voltage Gate-source voltage Drain current
Total power dissipation Channel temperature Storage temperature
V DSS V GSS P
D ?2Tch 30V V mA mW °C ±20±100I D I DP ?1Continuous Pulsed
mA ±400150150Tstg
°C
?55 to +150
Symbol Limits Unit ?1 Pw ≤10μs, Duty cycle ≤1%
?2 With each pin mounted on the recommended lands.
?A pr otection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in https://www.360docs.net/doc/4f11115086.html,e a protection circuit when the fixed voltages are exceeded.
z Thermal resistance
Parameter
°C / W
Rth(ch-a)Symbol Limits Unit Channel to ambient
? With each pin mounted on the recommended lands.
833
?
Transistor
Rev.C 2/3
z Electrical characteristics (T a=25°C)
z Electrical characteristic curves
D R
A I N C U R R E N T : I D (A )
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical output characteristics
D R A I N C U R R
E N T : I D (A )
GATE-SOURCE VOLTAGE : V GS (V)
Fig.2 Typical transfer characteristics
G A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
DRAIN CURRENT : I D (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
DRAIN CURRENT : I D (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
GATE-SOURCE VOLTAGE : V GS (V)
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
Fig.6 Static drain-source
on-state resistance vs. gate-source voltage
Transistor
Rev.C 3/3
CHANNEL TEMPERATURE : Tch (°C)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
F O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S )
DRAIN CURRENT : I D (A)
Fig.8 Forward transfer
admittance vs. drain current
R E V E R S E D R A I N C U R R E N T : I D R (A )
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
R E V E R S E D R A I N C U R R E N T : I D R (A )
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
C A P A C I T A N C E : C (p F )
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
S W I T H I N G T I M E : t (n s )
DRAIN CURRENT : I D (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for the measurement circuit and resultant waveforms)
z Switching characteristics measurement circuit
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
分销商库存信息: ROHM
2SK3019TL