CNY65中文资料

CNY64/ CNY65/ CNY66

Document Number 83540Vishay Semiconductors

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Optocoupler, Phototransistor Output, Very High Isolation Voltage

Features

?Rated isolation voltage (RMS includes DC) V IOWM = 1000 V RMS (1450 V peak)

?Rated recurring peak voltage (repetitive) V IORM = 1000 V RMS

?Thickness through insulation ≥ 3 mm

?Creepage current resistance according to V DE 0303/IEC 60112 C omparative T racking I ndex: CTI ≥ 200

?Lead-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

?UL1577, File No. E76222 System Code H,J &K, Double Protection

?DIN EN 60747-5-2 (V DE0884)DIN EN 60747-5-5 pending ?V DE related features:

?Rated impulse voltage (transient overvoltage)V IOTM = 8 k V peak

?Isolation test voltage (partial discharge test volt-age) V pd = 2.8 k V peak

Applications

Circuits for safe protective separation against electri-cal shock according to safety class II (reinforced iso-lation):

For appl. class I - I V at mains voltage ≤ 300 V For appl. class I - I V at mains voltage ≤ 600 V

For appl. class I - III at mains voltage ≤ 1000 V accord-ing to DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5 pending, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system inter-face.

Order Information

Description

The CNY64/ CNY65/ CNY66 consist of a phototrans-istor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic package.

The single components are mounted opposite one another, providing a distance between input and out-put for highest safety requirements of > 3 mm.VDE Standards

These couplers perform safety functions according to the following equipment standards:

DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Part Remarks

CNY64CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY65CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY66CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY64A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY65A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY64B CTR 100 - 200 %, High Isolation Distance, 4 PIN CNY65B

CTR 100 - 200 %, High Isolation Distance, 4 PIN

https://www.360docs.net/doc/5d19078045.html, Document Number 83540

CNY64/ CNY65/ CNY66

Vishay Semiconductors

Office machines (applied for reinforced isolation for mains voltage

≤ 400 V RMS)VDE 0804Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related household appa-ratus

VDE 0700/IEC 60335

Household equipment

VDE 0160

Electronic equipment for electrical power installation

VDE 0750/IEC 60601

Medical equipment

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Output

Coupler

Parameter

Test condition

Symbol V alue Unit Reverse voltage V R 5V Forward current I F 75mA Forward surge current t p ≤ 10 μs

I FSM 1.5A Power dissipation P diss 120mW Junction temperature

T j

100

°C

Parameter

Test condition

Symbol V alue Unit Collector emitter voltage V CEO 32V Emitter collector voltage V ECO 7V Collector current I C 50mA Collector peak current t p /T = 0.5, t p ≤ 10 ms

I CM 100mA Power dissipation P diss 130mW Junction temperature

T j

100

°C

Parameter

Test condition

Symbol V alue Unit AC isolation test voltage (RMS)t = 1 min

V ISO 8.2k V Total power dissipation P tot 250mW Ambient temperature range T amb - 55 to + 85°C Storage temperature range T stg - 55 to + 100

°C Soldering temperature

2 mm from case, t ≤ 10 s T sld

260

°C

CNY64/ CNY65/ CNY66

Document Number 83540Vishay Semiconductors

https://www.360docs.net/doc/5d19078045.html,

Electrical Characteristics

T amb = 25°C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Output

Coupler

Current Transfer Ratio

Maximum Safety Ratings

(according to DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings.

Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Output

Parameter

T est condition

Symbol Min

T yp.Max Unit Forward voltage I F = 50 mA V F 1.25 1.6

V Junction capacitance

V R = 0, f = 1 MHz

C j

50

pF

Parameter

T est condition

Symbol Min T yp.

Max

Unit Collector emitter voltage I C = 1 mA V CEO 32V Emitter collector voltage I E = 100 μA V ECO 7

V Collector-emitter leakage current

V CE = 20 V , I f = 0

I CEO

200

nA

Parameter

T est condition

Symbol Min

T yp.

Max Unit Collector emitter saturation voltage

I F = 10 mA, I C = 1 mA V CEsat 0.3

V Cut-off frequency V CE = 5 V , I F = 10 mA, R L = 100 ?f c 110kHz Coupling capacitance

f = 1 MHz

C k

0.3

pF

Parameter

T est condition

Part

Symbol Min T yp.

Max Unit I C /I F

V CE = 5 V , I F = 10 mA

CTR 50300%CNY64A CTR 63125%CNY65A CTR 63125%CNY64B CTR 100200%CNY65B CTR

100

200

%

Parameter

T est condition

Symbol Min

T yp.

Max Unit Forward current

I F

120

mA

Parameter

T est condition

Symbol Min

T yp.

Max Unit Power dissipation

P diss

250

mW

https://www.360docs.net/doc/5d19078045.html, Document Number 83540

CNY64/ CNY65/ CNY66

Vishay Semiconductors Coupler

Insulation Rated Parameters

Parameter

Test condition

Symbol Min

Typ.

Max Unit Rated impulse voltage V IOTM 8k V Safety temperature

T si

150

°C

Parameter

Test condition

Symbol Min Typ.Max Unit Partial discharge test voltage - Routine test

100 %, t test = 1 s V pd 2.8k V Partial discharge test voltage - Lot test (sample test)t T r = 60 s, t test = 10 s, (see figure 2)

V IOTM 8k V V pd 2.2k V Insulation resistance

V

IO = 500 V , T amb = 25°C R IO 1012?V IO = 500 V , T amb = 100°C R IO 1011?

V IO = 500 V , T amb = 150°C

(construction test only)

R IO

109

?

Figure 1. Derating diagram

02550750

255075100125150175200T amb (°C )

9510922

Figure 2. Test pulse diagram for sample test according to DIN EN

60747-5-2(V DE0884)/ DIN EN 60747-; IEC60747

13930

V IOTM

V Pd V IOWM V

CNY64/ CNY65/ CNY66

Document Number 83540Vishay Semiconductors

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Switching Characteristics

Parameter

T est condition

Symbol Min T yp.Max Unit Delay time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)

t d 2.6μs Rise time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)

t r 2.4μs Fall time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)

t f 2.7μs Storage time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)

t

s 0.3μs T urn-on time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)

t on 5.0μs T urn-off time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)

t off 3.0μs T urn-on time V S = 5 V , I F = 10 mA, R L = 1 k ? (see figure 4)

t on 25.0μs T urn-off time

V S = 5 V , I F = 10 mA, R L = 1 k ? (see figure 4)

t off

42.5

μ

s

Figure 3. Test circuit, non-saturated operation Figure 4. Test circuit, saturated operation

95 10900

R G = 50 t p

t p = 50 P T

= 0.01adjusted through

input amplitude

I F

Oscilloscope R L t 1 M W C L d 20 pF

I II

9510843

R G =50t p

t p =50T

=0.01I F 0

Oscilloscope R L ≥C L 20pF

?M 1≤μFigure 5. Switching Times

10%

I F

I C t p pulse duration t d delay time t r

rise time t on (=t d +t r )

turn-on time

t s storage time t f

fall time t off (=t s +t f )

turn-off time

https://www.360docs.net/doc/5d19078045.html, Document Number 83540

CNY64/ CNY65/ CNY66

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 7. Forward Current vs. Forward V oltage Figure 8. Relative Current Transfer Ratio vs. Ambient

Temperature

25

50

75

100

P –T o t a l P o w e r D i s s i p a t i o n (m

W )

t o t T amb –Ambient Temperature (°C )

9511003

0.1

1

10

100

100000.20.40.60.81.01.21.41.61.82.0

V F -Forward Voltage (V )9611862

F I -F o r w a r d C u r r e n t (m A )

0.5

0.6

0.70.80.91.01.11.21.31.41.5

–30–20–10010203040

50607080

T amb –Ambient T emperature (°C )

9611911

C T R –R e l a t i v e C u r r e n t T

r a n s f e r R a t i o r e l Figure 9. Collector Dark Current vs. Ambient Temperature

Figure 10. Collector Current vs. Forward Current

Figure 11. Collector Current vs. Collector Emitter V oltage

110

100

10000

102030405060708090

100T amb –Ambient T emperature (°C )

9612000

I –C o l l e c t o r D a r k C u r r e n t ,C E O w i t h o p e n B a s e (n A

)

0.1

1101

I –C o l l e c t o r C u r r e n t (m A )

C I F –Forward Current (mA )

100

9511012

0.1

110

1

V CE –Collector Emitter Voltage (V )

100

9511013

I –C o l l e c t o r C u r r e n t (m A )

C

CNY64/ CNY65/ CNY66

Document Number 83540Vishay Semiconductors

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Figure 12. Collector Emitter Saturation V oltage vs. Collector

Current

Figure 13. Current Transfer Ratio vs. Forward Current

Figure 14. Turn on / off Time vs. Forward Current

1

10

100

I C –Collector Current (mA )

9611912V –C o l l e c t o r E m i t t e r S a t u r a

t i o n V o l t a g e (V )C E s a t

0.1

110110

C T R –C u r r e n t T r a n s f e r R a t i o (%)

I

F –Forward Current (mA )

100

9511015

5

10

15

010********

I F -Forward Current (mA )20

9511017

t /t -T u r n o n /T u r n o f f T i

m e (μ s )

o f f o n Figure 15. Turn on / off Time vs. Collector Current

2

4

6

I C -Collector Current (mA )

10

9511016

05

8

t /t -T u r n o n /T u r n o f f T i m e (μ s )

o f f o n

https://www.360docs.net/doc/5d19078045.html, Document Number 83540

CNY64/ CNY65/ CNY66

Vishay Semiconductors

Package Dimensions in mm

Package Dimensions in mm

CNY64/ CNY65/ CNY66

Document Number 83540Vishay Semiconductors

https://www.360docs.net/doc/5d19078045.html,

Package Dimensions in mm

https://www.360docs.net/doc/5d19078045.html, Document Number 83540

CNY64/ CNY65/ CNY66

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of V ishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.

V ishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.V ishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use V ishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify V ishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

V ishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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