CNY65中文资料
CNY64/ CNY65/ CNY66
Document Number 83540Vishay Semiconductors
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Optocoupler, Phototransistor Output, Very High Isolation Voltage
Features
?Rated isolation voltage (RMS includes DC) V IOWM = 1000 V RMS (1450 V peak)
?Rated recurring peak voltage (repetitive) V IORM = 1000 V RMS
?Thickness through insulation ≥ 3 mm
?Creepage current resistance according to V DE 0303/IEC 60112 C omparative T racking I ndex: CTI ≥ 200
?Lead-free component
?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
?UL1577, File No. E76222 System Code H,J &K, Double Protection
?DIN EN 60747-5-2 (V DE0884)DIN EN 60747-5-5 pending ?V DE related features:
?Rated impulse voltage (transient overvoltage)V IOTM = 8 k V peak
?Isolation test voltage (partial discharge test volt-age) V pd = 2.8 k V peak
Applications
Circuits for safe protective separation against electri-cal shock according to safety class II (reinforced iso-lation):
For appl. class I - I V at mains voltage ≤ 300 V For appl. class I - I V at mains voltage ≤ 600 V
For appl. class I - III at mains voltage ≤ 1000 V accord-ing to DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system inter-face.
Order Information
Description
The CNY64/ CNY65/ CNY66 consist of a phototrans-istor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic package.
The single components are mounted opposite one another, providing a distance between input and out-put for highest safety requirements of > 3 mm.VDE Standards
These couplers perform safety functions according to the following equipment standards:
DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5pending
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Part Remarks
CNY64CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY65CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY66CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY64A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY65A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY64B CTR 100 - 200 %, High Isolation Distance, 4 PIN CNY65B
CTR 100 - 200 %, High Isolation Distance, 4 PIN
https://www.360docs.net/doc/5d19078045.html, Document Number 83540
CNY64/ CNY65/ CNY66
Vishay Semiconductors
Office machines (applied for reinforced isolation for mains voltage
≤ 400 V RMS)VDE 0804Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related household appa-ratus
VDE 0700/IEC 60335
Household equipment
VDE 0160
Electronic equipment for electrical power installation
VDE 0750/IEC 60601
Medical equipment
Absolute Maximum Ratings
T amb = 25°C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol V alue Unit Reverse voltage V R 5V Forward current I F 75mA Forward surge current t p ≤ 10 μs
I FSM 1.5A Power dissipation P diss 120mW Junction temperature
T j
100
°C
Parameter
Test condition
Symbol V alue Unit Collector emitter voltage V CEO 32V Emitter collector voltage V ECO 7V Collector current I C 50mA Collector peak current t p /T = 0.5, t p ≤ 10 ms
I CM 100mA Power dissipation P diss 130mW Junction temperature
T j
100
°C
Parameter
Test condition
Symbol V alue Unit AC isolation test voltage (RMS)t = 1 min
V ISO 8.2k V Total power dissipation P tot 250mW Ambient temperature range T amb - 55 to + 85°C Storage temperature range T stg - 55 to + 100
°C Soldering temperature
2 mm from case, t ≤ 10 s T sld
260
°C
CNY64/ CNY65/ CNY66
Document Number 83540Vishay Semiconductors
https://www.360docs.net/doc/5d19078045.html,
Electrical Characteristics
T amb = 25°C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Maximum Safety Ratings
(according to DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Output
Parameter
T est condition
Symbol Min
T yp.Max Unit Forward voltage I F = 50 mA V F 1.25 1.6
V Junction capacitance
V R = 0, f = 1 MHz
C j
50
pF
Parameter
T est condition
Symbol Min T yp.
Max
Unit Collector emitter voltage I C = 1 mA V CEO 32V Emitter collector voltage I E = 100 μA V ECO 7
V Collector-emitter leakage current
V CE = 20 V , I f = 0
I CEO
200
nA
Parameter
T est condition
Symbol Min
T yp.
Max Unit Collector emitter saturation voltage
I F = 10 mA, I C = 1 mA V CEsat 0.3
V Cut-off frequency V CE = 5 V , I F = 10 mA, R L = 100 ?f c 110kHz Coupling capacitance
f = 1 MHz
C k
0.3
pF
Parameter
T est condition
Part
Symbol Min T yp.
Max Unit I C /I F
V CE = 5 V , I F = 10 mA
CTR 50300%CNY64A CTR 63125%CNY65A CTR 63125%CNY64B CTR 100200%CNY65B CTR
100
200
%
Parameter
T est condition
Symbol Min
T yp.
Max Unit Forward current
I F
120
mA
Parameter
T est condition
Symbol Min
T yp.
Max Unit Power dissipation
P diss
250
mW
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CNY64/ CNY65/ CNY66
Vishay Semiconductors Coupler
Insulation Rated Parameters
Parameter
Test condition
Symbol Min
Typ.
Max Unit Rated impulse voltage V IOTM 8k V Safety temperature
T si
150
°C
Parameter
Test condition
Symbol Min Typ.Max Unit Partial discharge test voltage - Routine test
100 %, t test = 1 s V pd 2.8k V Partial discharge test voltage - Lot test (sample test)t T r = 60 s, t test = 10 s, (see figure 2)
V IOTM 8k V V pd 2.2k V Insulation resistance
V
IO = 500 V , T amb = 25°C R IO 1012?V IO = 500 V , T amb = 100°C R IO 1011?
V IO = 500 V , T amb = 150°C
(construction test only)
R IO
109
?
Figure 1. Derating diagram
02550750
255075100125150175200T amb (°C )
9510922
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(V DE0884)/ DIN EN 60747-; IEC60747
13930
V IOTM
V Pd V IOWM V
CNY64/ CNY65/ CNY66
Document Number 83540Vishay Semiconductors
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Switching Characteristics
Parameter
T est condition
Symbol Min T yp.Max Unit Delay time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)
t d 2.6μs Rise time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)
t r 2.4μs Fall time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)
t f 2.7μs Storage time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)
t
s 0.3μs T urn-on time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)
t on 5.0μs T urn-off time V S = 5 V , I C = 5 mA, R L = 100 ? (see figure 3)
t off 3.0μs T urn-on time V S = 5 V , I F = 10 mA, R L = 1 k ? (see figure 4)
t on 25.0μs T urn-off time
V S = 5 V , I F = 10 mA, R L = 1 k ? (see figure 4)
t off
42.5
μ
s
Figure 3. Test circuit, non-saturated operation Figure 4. Test circuit, saturated operation
95 10900
R G = 50 t p
t p = 50 P T
= 0.01adjusted through
input amplitude
I F
Oscilloscope R L t 1 M W C L d 20 pF
I II
9510843
R G =50t p
t p =50T
=0.01I F 0
Oscilloscope R L ≥C L 20pF
?M 1≤μFigure 5. Switching Times
10%
I F
I C t p pulse duration t d delay time t r
rise time t on (=t d +t r )
turn-on time
t s storage time t f
fall time t off (=t s +t f )
turn-off time
https://www.360docs.net/doc/5d19078045.html, Document Number 83540
CNY64/ CNY65/ CNY66
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 7. Forward Current vs. Forward V oltage Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
25
50
75
100
P –T o t a l P o w e r D i s s i p a t i o n (m
W )
t o t T amb –Ambient Temperature (°C )
9511003
0.1
1
10
100
100000.20.40.60.81.01.21.41.61.82.0
V F -Forward Voltage (V )9611862
F I -F o r w a r d C u r r e n t (m A )
0.5
0.6
0.70.80.91.01.11.21.31.41.5
–30–20–10010203040
50607080
T amb –Ambient T emperature (°C )
9611911
C T R –R e l a t i v e C u r r e n t T
r a n s f e r R a t i o r e l Figure 9. Collector Dark Current vs. Ambient Temperature
Figure 10. Collector Current vs. Forward Current
Figure 11. Collector Current vs. Collector Emitter V oltage
110
100
10000
102030405060708090
100T amb –Ambient T emperature (°C )
9612000
I –C o l l e c t o r D a r k C u r r e n t ,C E O w i t h o p e n B a s e (n A
)
0.1
1101
I –C o l l e c t o r C u r r e n t (m A )
C I F –Forward Current (mA )
100
9511012
0.1
110
1
V CE –Collector Emitter Voltage (V )
100
9511013
I –C o l l e c t o r C u r r e n t (m A )
C
CNY64/ CNY65/ CNY66
Document Number 83540Vishay Semiconductors
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Figure 12. Collector Emitter Saturation V oltage vs. Collector
Current
Figure 13. Current Transfer Ratio vs. Forward Current
Figure 14. Turn on / off Time vs. Forward Current
1
10
100
I C –Collector Current (mA )
9611912V –C o l l e c t o r E m i t t e r S a t u r a
t i o n V o l t a g e (V )C E s a t
0.1
110110
C T R –C u r r e n t T r a n s f e r R a t i o (%)
I
F –Forward Current (mA )
100
9511015
5
10
15
010********
I F -Forward Current (mA )20
9511017
t /t -T u r n o n /T u r n o f f T i
m e (μ s )
o f f o n Figure 15. Turn on / off Time vs. Collector Current
2
4
6
I C -Collector Current (mA )
10
9511016
05
8
t /t -T u r n o n /T u r n o f f T i m e (μ s )
o f f o n
https://www.360docs.net/doc/5d19078045.html, Document Number 83540
CNY64/ CNY65/ CNY66
Vishay Semiconductors
Package Dimensions in mm
Package Dimensions in mm
CNY64/ CNY65/ CNY66
Document Number 83540Vishay Semiconductors
https://www.360docs.net/doc/5d19078045.html,
Package Dimensions in mm
https://www.360docs.net/doc/5d19078045.html, Document Number 83540
CNY64/ CNY65/ CNY66
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
V ishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.V ishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use V ishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify V ishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
V ishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423