SI6926ADQ_05中文资料
Si6926ADQ
Vishay Siliconix
New Product
Document Number: 72754S-40230—Rev. A, 16-Feb-04
https://www.360docs.net/doc/6f3971854.html,
1
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
0.030 @ V GS = 4.5 V
4.50.033 @ V GS = 3.0 V 4.220
0.035 @ V GS = 2.5 V 3.90.043 @ V
GS = 1.8 V
3.6
D 1S 1S 1G 1
1234
8765D 2S 2S 2G 2
TSSOP-8
Top View
D
D G 11
N-Channel MOSFET
D G 2
2
N-Channel MOSFET
Ordering Information:Si6926ADQ-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State Unit
Drain-Source Voltage V DS 20Gate-Source Voltage
V GS "8
V
T A = 25_C 4.5 4.1Continuous Drain Current (T J = 150_C)a T A = 70_C
I D 3.6
3.3
Pulsed Drain Current (10 m s Pulse Width)I DM 20
A
Continuous Source Current (Diode Conduction)a I S 0.830.69Maximum Power Dissipation T A = 25_C 1.00.83a
T A = 70_C P D 0.64
0.53
W Operating Junction and Storage Temperature Range
T J , T stg
?55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
M i
J ti t A bi t t v 10 sec 90125Maximum Junction-to-Ambient a Steady State R thJA 126150_Maximum Junction-to-Foot (Drain)
Steady State
R thJF
65
80
C/W
Notes
a.Surface Mounted on FR4 Board, t v 10 sec.
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Si6926ADQ
Vishay Siliconix
New Product
https://www.360docs.net/doc/6f3971854.html,
2
Document Number: 72754S-40230—Rev. A, 16-Feb-04
SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ a Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 0.40
1.0V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "8 V "100nA V DS = 20 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V, T J = 55_C
5
m A On-State Drain Current
b
I D(on)
V DS w 5 V, V GS = 5 V 10
A
V GS = 4.5 V, I D = 4.5 A
0.0240.030V GS = 3.0 V, I D = 4.2 A 0.0260.033Drain-Source On-State Resistance b
r DS(on)
V GS = 2.5 V, I D = 3.9 A 0.0290.035W
V GS = 1.8 V, I D = 3.6 A
0.0350.043
Forward Transconductance b g fs V DS = 10 V, I D = 4.5 A 26S Diode Forward Voltage b
V SD
I S = 0.83 A, V GS = 0 V
0.6
1.1V Dynamic a
Total Gate Charge Q g 7.510.5
Gate-Source Charge Q gs V DS = 10 V, V GS = 4.5 V, I D = 4.5 A
1.2nC
Gate-Drain Charge Q gd 1.2Gate Resistance R g 1.9W
Turn-On Delay Time t d(on)612Rise Time
t r V 1625Turn-Off Delay Time t d(off)DD = 10 V, R L = 10 W
I D ^ 1 A, V GEN = 10 V, R g = 6 W 4670ns Fall Time
t f 915Source-Drain Reverse Recovery Time
t rr
I F = 0.83 A, di/dt = 100 A/m s 20
40
Notes
a.Guaranteed by design, not subject to production testing.
b.Pulse test; pulse width v 300 m s, duty cycle v 2%.
0.00
0.250.500.75
1.00
1.25
1.50
1.75
2.00
1
2
3
4
5
V DS ? Drain-to-Source Voltage (V)
V GS ? Gate-to-Source Voltage (V)
Si6926ADQ
Vishay Siliconix
New Product
Document Number: 72754S-40230—Rev. A, 16-Feb-04
https://www.360docs.net/doc/6f3971854.html,
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2004006008001000
120004
8
12
16
20
? O n -R e s i s t a n c e (r D S (o n )W )
0.60.8
1.0
1.2
1.4
1.6
?50
?250255075100125150
0123456
2
4
6
8
10
0.00
0.01
0.02
0.03
0.04
0.05
0.0
4.0
8.0
12.0
16.0
20.0
V
DS ? Drain-to-Source Voltage (V)
I
D ? Drain Current (A)Gate Charge
On-Resistance vs. Drain Current
? G a t e -t o -S o u r c e V o l t a g e (V )
Q g ? Total Gate Charge (nC)
C ? C a p a c i t a n c e (p F )
V G S Capacitance
On-Resistance vs. Junction Temperature
0.00
0.010.020.030.040.050.060.07
0.080
12345678
20
10
1Source-Drain Diode Forward Voltage
? O n -R e s i s t a n c e (r D S (o n )W )
V SD ? Source-to-Drain Voltage (V)V GS ? Gate-to-Source Voltage (V)
? S o u r c e C u r r e n t (A )
I S r D S (o n ) ? O n -R e s i i s t a n c e (N o r m a l i z e d )
https://www.360docs.net/doc/6f3971854.html, 4
Document Number: 72754
S-40230—Rev. A, 16-Feb-04 Single Pulse Power, Junction-to-Ambient
600
100
Si6926ADQ
Vishay Siliconix
New Product
Document Number: 72754S-40230—Rev. A, 16-Feb-04
https://www.360docs.net/doc/6f3971854.html,
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
21
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
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Notice
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