PMV117EN中文资料

1.Product pro?le

1.1General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using T renchMOS? technology.

1.2Features

1.3Applications

1.4Quick reference data

2.Pinning information

PMV117EN

μTrenchMOS? enhanced logic level FET

Rev. 02 — 7

April 2005

Product data sheet

s Logic level threshold

s Very fast switching

s Subminiature surface-mounted package

s Battery management s Low power DC-to-DC converter

s High-speed switch

s V DS ≤30V

s I D ≤2.5A s R DSon ≤117m ? (V GS =10V)

s P tot ≤0.83W

Table 1:Pinning Pin Description Simpli?ed outline Symbol

1gate (G)SOT23

2source (S)3

drain (D)

mbb076

3.Ordering information

Table 2:Ordering information

Type number Package

Name Description Version PMV117EN TO-236AB plastic surface mounted package; 3 leads SOT23

4.Limiting values

Table 3:Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)25°C≤T j≤150°C-30V

V DGR drain-gate voltage (DC)25°C≤T j≤150°C; R GS=20k?-30V

V GS gate-source voltage (DC)-±20V

I D drain current (DC)T sp=25°C; V GS=10V;Figure2 and3- 2.5A

T sp=100°C; V GS=10V;Figure2- 1.6A

I DM peak drain current T sp=25°C; pulsed; t p≤10μs;Figure3-10A

P tot total power dissipation T sp=25°C;Figure1-0.83W T stg storage temperature?65+150°C T j junction temperature?65+150°C Source-drain diode

I S source (diode forward) current (DC)T sp=25°C-0.8A

I SM peak source (diode forward) current T sp=25°C; pulsed; t p≤10μs- 3.3A

V GS ≥10V

Fig 1.Normalized total power dissipation as a

function of solder point temperature

Fig 2.Normalized continuous drain current as a

function of solder point temperature

T sp =25°C; I DM is single pulse

Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03aa17

4080

120050100150

200

T sp (°C)

P der (%)03aa25

120050100150

200

T sp (°C)

I der (%)P der P tot

P tot 25C °

()

------------------------100%

×=I der I D

I D 25C °

()

--------------------100%

×=03ak56

10?1

102I D (A)10?2

V DS (V)

10?1

102

1t p = 10 μs 100 μs

1 ms 10 ms 100 ms

Limit R DSon = V DS / I D

5.Thermal characteristics

Table 4:Thermal characteristics

Symbol Parameter

Conditions Min Typ Max Unit R th(j-sp)

thermal resistance from junction to solder point

Figure 4

--100

K/W

Fig 4.Transient thermal impedance from junction to solder point as a function of pulse duration

03ak55

10?4

t p (s)

10?1

10?310?2102

103Z th(j-sp)(K/W)

1t p

t p T

δ =

δ = 0.5 0.2

0.1 0.05 0.02single pulse

6.Characteristics

Table 5:Characteristics

T j=25°C unless otherwise speci?ed.

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source breakdown voltage I D=10μA; V GS=0V

T j=25°C3037-V

T j=?55°C27--V

V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;Figure9 and10

T j=25°C 1.52-V

T j=150°C 1.1--V

T j=?55°C-- 2.7V

I DSS drain-source leakage current V DS=24V; V GS=0V

T j=25°C-0.010.5μA

T j=150°C--10μA I GSS gate-source leakage current V GS=±20V; V DS=0V-10100nA R DSon drain-source on-state resistance V GS=10V; I D=500mA;Figure6 and8

T j=25°C-74117m?

V GS=4.5V; I D=500mA;Figure6 and8-

T j=25°C-117190m?

T j=150°C188300m?Dynamic characteristics

Q g(tot)total gate charge I D=0.5A; V DD=15V; V GS=10V;

Figure11- 4.6-nC

Q gs gate-source charge-0.6-nC Q gd gate-drain (Miller) charge- 1.35-nC

C iss input capacitance V GS=0V; V DS=10V; f=1MHz;

Figure13-147-pF

C oss output capacitance-65-pF C rss reverse transfer capacitance-41-pF t d(on)turn-on delay time V DD=15V; R L=15?; V GS=10V-4-ns t r rise time-7.5-ns t d(off)turn-off delay time-18-ns t f fall time-13-ns Source-drain diode

V SD source-drain (diode forward) voltage I S=0.83A; V GS=0V;Figure12-0.7 1.2V t rr reverse recovery time I S=1A; dI S/dt=?100A/μs; V GS=0V;

V DS=25V

-69-ns

T j =25°C T j =25°C

Fig 5.Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.Drain-source on-state resistance as a function

of drain current; typical values

T j =25°C and 150°C; V DS >I D ×R DSon

Fig 7.Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.Normalized drain-source on-state resistance

factor as a function of junction temperature

03ak57

00.20.40.60.8

V DS (V)

3I D (A)

3.8 V GS (V) = 2.4

3.610 6

4.5 3.4

2.6

2.8

3.2

03ak58

012

I D (A)

100

200

300

400R DSon (m ?)

T j = 25 ?C V GS (V) = 3

3.2

3.610

63.84.53.4

03ak59

0123

V GS (V)

I D (A)V DS > I D × R DSon

T j = 150 ?C

25 ?C

03ad57

?60

060120

180

T j (°C)

00.5

1.5

2a a R DSon

R DSon 25C °()

------------------------------=

I D =1mA; V DS =V GS T j =25°C; V DS =5V

Fig 9.Gate-source threshold voltage as a function of

junction temperature

Fig 10.Sub-threshold drain current as a function of

gate-source voltage

I D =0.5A; V DD =15V

Fig 11.Gate-source voltage as a function of gate charge; typical values

03ak63

?60

060120

180

T j (°C)

00.511.5

2.5V GS(th)(V)

typ

min

03ak64

00.8 1.6 2.4

3.2

V GS (V)

10?110?2

10?3

10?4

10?5

10?6

I D (A)typ

min 03ak62

024

Q G (nC)

10V GS (V)

I D = 0.5 A T j = 25 °C V DD = 15 V

T j =25°C and 150°C; V GS =0V V GS =0V; f =1MHz

Fig 12.Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical values

Fig 13.Input,output and reverse transfer capacitances

as a function of drain-source voltage; typical values

03ak60

00.30.60.9

1.2

V SD (V)

I S (A)

V GS = 0 V T j = 150 ?C

25 ?C

03ak61

10?1

110

102

V DS (V)

10102

103

C (pF)

C iss

C oss

C rss

7.Package outline

Fig 14.Package outline SOT23

UNIT A 1max.b p c D E e 1H E L p Q w v REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE 99-09-1304-11-04

IEC

JEDEC JEITA

0.1

0.480.38

0.150.09

3.02.8

1.41.2

0.95

e 1.9

2.52.1

0.550.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)0.450.15

SOT23

TO-236AB

b p

D e 1

A 1

L p

detail X

H E

E w M v M A

B 01 2 mm

scale

A 1.10.9

Plastic surface mounted package; 3 leads

SOT23

8.Revision history

Table 6:Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PMV117EN_220050407Product data sheet-9397 750 14709PMV117EN-01 Modi?cations:?The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

?Table 5 “Characteristics”; correction to V GS(th) data

?Table 2 “Ordering information”: added

PMV117EN-0120030226Product data-9397 750 11095-

9.Data sheet status

[1]Please consult the most recently issued data sheet before initiating or completing a design.

[2]The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL https://www.360docs.net/doc/6c14243277.html,.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10.De?nitions

Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values de?nition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.

11.Disclaimers

Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’),relevant changes will be communicated via a Customer Product/Process Change Noti?cation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these

products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.

12.Trademarks

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V .

13.Contact information

For additional information, please visit: https://www.360docs.net/doc/6c14243277.html,

For sales of?ce addresses, send an email to: sales.addresses@https://www.360docs.net/doc/6c14243277.html,

Level Data sheet status [1]Product status [2][3]De?nition

I Objective data Development This data sheet contains data from the objective speci?cation for product development. Philips Semiconductors reserves the right to change the speci?cation in any manner without notice.

Preliminary data

Quali?cation

This data sheet contains data from the preliminary speci?cation.Supplementary data will be published at a later date.Philips Semiconductors reserves the right to change the speci?cation without notice,in order to improve the design and supply the best possible product.

III Product data Production

This data sheet contains data from the product speci?cation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design,manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Noti?cation (CPCN).

14.Contents

1Product pro?le. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

6Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

10De?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13Contact information . . . . . . . . . . . . . . . . . . . . 11

? Koninklijke Philips Electronics N.V.2005

All rights are reserved.Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.The information presented in this document does

not form part of any quotation or contract,is believed to be accurate and reliable and may

be changed without notice.No liability will be accepted by the publisher for any

consequence of its use.Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 7April2005

Document number: 9397 750 14709