DSSK40-0015B中文资料

DSSK40-0015B中文资料
DSSK40-0015B中文资料

Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.

TO-247 AD

A = Anode, C = Cathode , TA

B = Cathode

A

A

C C (TAB)

Symbol Conditions Maximum Ratings I

FRMS

50A

I FAV T

C

= 135°C; rectangular, d = 0.520A

I FAV T

C

= 135°C; rectangular, d = 0.5; per device40A

I FSM T

VJ

= 45°C; t

p

= 10 ms (50 Hz), sine350A

E

AS I

AS

= tbd A; L = 180 μH; T

VJ

= 25°C; non repetitive tbd mJ

I AR V

A

=1.5 ? V

RRM

typ.; f=10 kHz; repetitive tbd A

(dv/dt)

cr

tbd V/m s

T

VJ

-55...+150°C

T

VJM

150°C

T

stg

-55...+150°C

P

tot T

C

= 25°C90W

M

d

mounting torque0.8...1.2Nm Weight typical6g I

FAV

=2x20 A

V

RRM

=15 V

V

F

=0.32 V

7

V

RSM V

RRM

Type

V V

1515DSSK 40-0015B

Symbol Conditions Characteristic Values

typ.max.

I

R T VJ = 25°C V R= V RRM10mA

T

VJ

= 100°C V

R

= V

RRM

200mA

V

F I

F

=20 A;T

VJ

=125°C0.32V

I

F

=20 A;T

VJ

=25°C0.44V

I

F

=40 A;T

VJ

=125°C0.41V

R

thJC

1.4K/W

R

thCH 0.25K/W

Preliminary Data

0.0

0.20.4

110

100

I F

A T 150125Fig. 3Typ. junction capacitance C T

Fig. 2Typ. value of reverse current I R

versus reverse voltage V R

Fig. 1Maximum forward voltage

drop characteristics

Fig. 6Transient thermal impedance junction to case at various duty cycles

007

Note: All curves are per diode

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