BYV32-100-XM中文资料

V RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Voltage V R Continuous Reverse Voltage I FRM Repetitive Peak Forward Current t p = 10m s I

F(AV)Average Forward Current

T case = 70°C (switching operation, d = 0.5, both diodes conducting) I FSM Surge Non Repetitive Forward Current t p = 10 ms

T stg Storage Temperature Range

T j

Maximum Operating Junction Temperature

50V 100V 150V 200V 50V 100V 150V 200V 50V

100V

150V

200V

200A 20A

80A –65 to 200°C

200°C

ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)

BYV32–50M BYV32–100M BYV32–150M BYV32–200M

Parameter Test Conditions Min.Typ.Max.

Unit

I R

Reverse Current

V F *

Forward Voltage

t rr

Reverse Recovery Time

Q rr Recovered Charge

V FP

Forward Recovery Overvoltage V

R = V RWM T j = 25°C V R = V RWM T j = 100°C I F = 8A

T C = 25°C I F = 20A T C = 25°C I F = 5A T C = 100°C I F = 2A

V R = 30V

di / dt = 20A/m s I F = 1A V R = 30V di / dt = 50A/m s

I F = 2A V R = 30V di / dt = 20A/m s

di / dt = 50A/m s

I F = 1A 300.61.11.50.95355015

1.0

m A mA V

ns ns nC V

ELECTRICAL CHARACTERISTICS (Per Diode) (T case = 25°C unless otherwise stated)

* Pulse Test: t p ￡300m s, duty cycle ￡2%.

THERMAL CHARACTERISTICS