BYV32-100-XM中文资料
V RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Voltage V R Continuous Reverse Voltage I FRM Repetitive Peak Forward Current t p = 10m s I
F(AV)Average Forward Current
T case = 70°C (switching operation, d = 0.5, both diodes conducting) I FSM Surge Non Repetitive Forward Current t p = 10 ms
T stg Storage Temperature Range
T j
Maximum Operating Junction Temperature
50V 100V 150V 200V 50V 100V 150V 200V 50V
100V
150V
200V
200A 20A
80A –65 to 200°C
200°C
ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)
BYV32–50M BYV32–100M BYV32–150M BYV32–200M
Parameter Test Conditions Min.Typ.Max.
Unit
I R
Reverse Current
V F *
Forward Voltage
t rr
Reverse Recovery Time
Q rr Recovered Charge
V FP
Forward Recovery Overvoltage V
R = V RWM T j = 25°C V R = V RWM T j = 100°C I F = 8A
T C = 25°C I F = 20A T C = 25°C I F = 5A T C = 100°C I F = 2A
V R = 30V
di / dt = 20A/m s I F = 1A V R = 30V di / dt = 50A/m s
I F = 2A V R = 30V di / dt = 20A/m s
di / dt = 50A/m s
I F = 1A 300.61.11.50.95355015
1.0
m A mA V
ns ns nC V
ELECTRICAL CHARACTERISTICS (Per Diode) (T case = 25°C unless otherwise stated)
* Pulse Test: t p £300m s, duty cycle £2%.
THERMAL CHARACTERISTICS