DTS6420规格书(最新版)

N-Channel 60-V (D-S) MOSFET

FEATURES

?Halogen-free According to IEC 61249-2-21Available

?TrenchFET ? Power MOSFET ?100 % R g Tested ?100 % UIS Tested

APPLICATIONS

?Battery Switch ?DC/DC Converter

PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)a

Q g (Typ.)60

0.078 at V GS = 10 V 3.4 2.1 nC

0.089 at V GS = 4.5 V

3.1

Notes:

a.Based on T C = 25 °C.

b.Surface Mounted on 1" x 1" FR4 board.

c.t = 5 s.

d.Maximum under Steady State conditions is 120 °C/W.

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter

Symbol Limit Unit Drain-Source Voltage V DS 60V

Gate-Source Voltage

V GS

± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D 3.4A

T C = 70 °C 1.9T A = 25 °C 3.1b, c T A = 70 °C

1.8b, c Pulsed Drain Current

I DM 7Continuous Source-Drain Diode Current T C = 25 °C I S 1.49T A = 25 °C 0.91b, c

Avalanche Current

L = 0.1 mH I AS 6Single-Pulse Avalanche Energy E AS 1.8mJ Maximum Power Dissipation

T C = 25 °C P D 1.66W T C = 70 °C 1.06T A = 25 °C 1.09b, c T A = 70 °C 0.7b, c Operating Junction and Storage T emperature Range

T J , T stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol

Typical Maximum Unit Maximum Junction-to-Ambient b, d

≤ 5 s R thJA 90115°C/W

Maximum Junction-to-Foot (Drain)Steady State R thJF 60

TO-226AA Top View

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Notes:

a.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b.Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Min.Typ.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V DS = 0 V , I D = 250 μA

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA 55mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5

Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 13V Gate-Source Leakage

I GSS V DS = 0 V, V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 60 V , V GS = 0 V 1μA V DS = 60 V, V GS = 0 V , T J = 55 °C

On-State Drain Current a

I D(on)V DS ≥ 5 V, V GS = 10 V 8

A Drain-Source On-State Resistance a R DS(on)V GS = 10 V , I D = 1.9 A 0.0750.078ΩV GS = 4.5 V , I D = 1.7 A 0.0860.089

Forward T ransconductance a g fs

V DS = 15V , I D = 1.9 A

Dynamic b

Input Capacitance C iss V DS = 30 V , V GS = 0 V , f = 1 MHz 180pF

Output Capacitance

C oss 22Reverse Transfer Capacitance C rss 13Total Gate Charge Q g V DS = 30 V , V GS = 10 V , I

D = 1.9 A 4.2 6.1nC V DS = 30 V, V GS = 4.5 V, I D = 1.9 A

2.1

3.2

Gate-Source Charge Q gs 0.7Gate-Drain Charge Q gd 1Gate Resistance R g f = 1 MHz

0.6

2.2 5.1Ω

Turn-On Delay Time t d(on) V DD = 30 V, R L = 20 Ω

I D ? 1.5 A, V GEN = 10 V , R G = 1 Ω

46ns Rise Time

t r 1015Turn-Off Delay Time t d(off) 1015Fall Time

t f 710.5Turn-On Delay Time t d(on) V DD = 30 V, R L = 20 Ω

I D = 1.5 A, V GEN = 4.5 V , R G = 1 Ω1523ns Rise Time

t r 1624Turn-Off Delay Time t d(off) 1117Fall Time

t f

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C

2.19A Pulse Diode Forward Current a I SM 7Body Diode Voltage

V SD I S = 1.5 A

0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 1.5 A, dI/dt = 100 A/μs, T J = 25 °C

1523ns Body Diode Reverse Recovery Charge Q rr 1015

nC Reverse Recovery Fall Time t a 12ns

Reverse Recovery Rise Time

t b

Output Characteristics Transfer Characteristics

On-Resistance vs. Junction Temperature

Threshold Voltage Single Pulse Power

Safe Operating Area

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

*The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

Power Derating, Junction-to-Case

Power Derating, Junction-to-Ambient

THERMAL RATINGS (T A = 25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Foot

Mechanical Dimensions

TO-92

Dimensions in Millimeters