Si4378DY-E3中文资料
FEATURES
D Ultra Low On-Resistance Using High Density TrenchFET r Gen II Power MOSFET Technology D Q g Optimized D 100% R g Tested
APPLICATIONS
D Synchronous Rectification D Point-Of-Load
Vishay Siliconix
New Product
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
0.0027 @ V GS = 4.5 V 2520
0.0042 @ V GS
= 2.5 V
22
SO-8
S D S D S D G
D
5
678Top View
234
1D
G
N-Channel MOSFET
Ordering Information:Si4378DY—E3
Si4378DY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State Unit
Drain-Source Voltage V DS 20Gate-Source Voltage
V GS "12
V
T A = 25_C 2519Continuous Drain Current (T J = 150_C)a T A = 70_C
I D 20
13
Pulsed Drain Current (10 m s Pulse Width)I DM 70
A
Continuous Source Current (Diode Conduction)a I S 2.9
1.3
Avalanche Current
L = 0.1 mH I AS 40
Maximum Power Dissipation T A = 25_C 3.5 1.6a
T A = 70_C P D 2.2
1
W Operating Junction and Storage Temperature Range
T J , T stg
?55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
M i
J ti t A bi t t v 10 sec 2935Maximum Junction-to-Ambient a Steady State R thJA 6780_Maximum Junction-to-Foot (Drain)Steady State
R thJF
13
16
C/W
Notes
a.Surface Mounted on 1” x 1” FR4 Board.
Vishay Siliconix
New Product
SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 0.6
1.8V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "12 V "100
nA V DS = 20 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V, T J = 55_C
5
m A On-State Drain Current a
I D(on)V DS w 5 V, V GS = 4.5 V 30
A V GS = 4.5 V, I D = 25 A 0.00220.0027Drain-Source On-State Resistance a r DS(on)V GS = 2.5 V, I D = 22 A 0.00340.0042
W Forward Transconductance a g fs V DS = 10 V, I D = 25 A 150S Diode Forward Voltage a
V SD
I S = 2.9 A, V GS = 0 V
0.72
1.1V
Dynamic b
Input Capacitance C iss 8500Output Capacitance
C oss V DS = 10 V, V GS = 0 V, f = 1 MHz
1250pF
Reverse Transfer Capacitance C rss 650Total Gate Charge Q g 55Gate-Source Charge Q gs V DS = 10 V, V GS = 4.5 V, I D = 25 A 16nC Gate-Drain Charge Q gd 10Gate Resistance R g 0.8
1.3
2.0W Turn-On Delay Time t d(on)85130Rise Time
t r V 65100Turn-Off Delay Time t d(off)DD = 10 V, R L = 10 W
I D ^ 1 A, V GEN = 4.5 V, R g = 6 W
140210ns Fall Time
t f 5080Source-Drain Reverse Recovery Time
t rr
I F = 2.9 A, di/dt = 100 A/m s 50
80
Notes
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
0.0
0.5
1.0
1.5
2.0
2.5
1
2
3
4
5
V DS ? Drain-to-Source Voltage (V)
V GS ? Gate-to-Source Voltage (V)
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
020004000
6000
8000
10000
4
8
12
16
20
0.000
0.0010.0020.003
0.0040.0050.0060
10
20
30
40
50
60
0123456
10
20
30405060700.60.81.01.21.41.6
1.8?50
?250255075
100125150
Gate Charge
On-Resistance vs. Drain Current
? G a t e -t o -S o u r c e V o l t a g e (V )
Q g ? Total Gate Charge (nC)
V DS ? Drain-to-Source Voltage (V)
C ? C a p a c i t a n c e (p F )
V G S ? O n -R e s i s t a n c e (r D S (o n )W )
I D ? Drain Current (A)Capacitance
On-Resistance vs. Junction Temperature
1.0
1.2
0.000
0.003
0.006
0.009
0.012
0.015
2
4
6
8
10
110
50
0.00
0.2
0.4
0.6
0.8
Source-Drain Diode Forward Voltage
? O n -R e s i s t a n c e (r D S (o n )W )
V SD ? Source-to-Drain Voltage (V)
V GS ? Gate-to-Source Voltage (V)
? S o u r c e C u r r e n t (A )
I S r D S (o n ) ? O n -R e s i i s t a n c e (N o r m a l i z e d )
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
21
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e