Si4378DY-E3中文资料

Si4378DY-E3中文资料
Si4378DY-E3中文资料

FEATURES

D Ultra Low On-Resistance Using High Density TrenchFET r Gen II Power MOSFET Technology D Q g Optimized D 100% R g Tested

APPLICATIONS

D Synchronous Rectification D Point-Of-Load

Vishay Siliconix

New Product

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V DS (V)

r DS(on) (W )

I D (A)

0.0027 @ V GS = 4.5 V 2520

0.0042 @ V GS

= 2.5 V

22

SO-8

S D S D S D G

D

5

678Top View

234

1D

G

N-Channel MOSFET

Ordering Information:Si4378DY—E3

Si4378DY-T1—E3 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State Unit

Drain-Source Voltage V DS 20Gate-Source Voltage

V GS "12

V

T A = 25_C 2519Continuous Drain Current (T J = 150_C)a T A = 70_C

I D 20

13

Pulsed Drain Current (10 m s Pulse Width)I DM 70

A

Continuous Source Current (Diode Conduction)a I S 2.9

1.3

Avalanche Current

L = 0.1 mH I AS 40

Maximum Power Dissipation T A = 25_C 3.5 1.6a

T A = 70_C P D 2.2

1

W Operating Junction and Storage Temperature Range

T J , T stg

?55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical

Maximum

Unit

M i

J ti t A bi t t v 10 sec 2935Maximum Junction-to-Ambient a Steady State R thJA 6780_Maximum Junction-to-Foot (Drain)Steady State

R thJF

13

16

C/W

Notes

a.Surface Mounted on 1” x 1” FR4 Board.

Vishay Siliconix

New Product

SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 0.6

1.8V Gate-Body Leakage

I GSS V DS = 0 V, V GS = "12 V "100

nA V DS = 20 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V, T J = 55_C

5

m A On-State Drain Current a

I D(on)V DS w 5 V, V GS = 4.5 V 30

A V GS = 4.5 V, I D = 25 A 0.00220.0027Drain-Source On-State Resistance a r DS(on)V GS = 2.5 V, I D = 22 A 0.00340.0042

W Forward Transconductance a g fs V DS = 10 V, I D = 25 A 150S Diode Forward Voltage a

V SD

I S = 2.9 A, V GS = 0 V

0.72

1.1V

Dynamic b

Input Capacitance C iss 8500Output Capacitance

C oss V DS = 10 V, V GS = 0 V, f = 1 MHz

1250pF

Reverse Transfer Capacitance C rss 650Total Gate Charge Q g 55Gate-Source Charge Q gs V DS = 10 V, V GS = 4.5 V, I D = 25 A 16nC Gate-Drain Charge Q gd 10Gate Resistance R g 0.8

1.3

2.0W Turn-On Delay Time t d(on)85130Rise Time

t r V 65100Turn-Off Delay Time t d(off)DD = 10 V, R L = 10 W

I D ^ 1 A, V GEN = 4.5 V, R g = 6 W

140210ns Fall Time

t f 5080Source-Drain Reverse Recovery Time

t rr

I F = 2.9 A, di/dt = 100 A/m s 50

80

Notes

a.Pulse test; pulse width v 300 m s, duty cycle v 2%.

b.Guaranteed by design, not subject to production testing.

0.0

0.5

1.0

1.5

2.0

2.5

1

2

3

4

5

V DS ? Drain-to-Source Voltage (V)

V GS ? Gate-to-Source Voltage (V)

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

020004000

6000

8000

10000

4

8

12

16

20

0.000

0.0010.0020.003

0.0040.0050.0060

10

20

30

40

50

60

0123456

10

20

30405060700.60.81.01.21.41.6

1.8?50

?250255075

100125150

Gate Charge

On-Resistance vs. Drain Current

? G a t e -t o -S o u r c e V o l t a g e (V )

Q g ? Total Gate Charge (nC)

V DS ? Drain-to-Source Voltage (V)

C ? C a p a c i t a n c e (p F )

V G S ? O n -R e s i s t a n c e (r D S (o n )W )

I D ? Drain Current (A)Capacitance

On-Resistance vs. Junction Temperature

1.0

1.2

0.000

0.003

0.006

0.009

0.012

0.015

2

4

6

8

10

110

50

0.00

0.2

0.4

0.6

0.8

Source-Drain Diode Forward Voltage

? O n -R e s i s t a n c e (r D S (o n )W )

V SD ? Source-to-Drain Voltage (V)

V GS ? Gate-to-Source Voltage (V)

? S o u r c e C u r r e n t (A )

I S r D S (o n ) ? O n -R e s i i s t a n c e (N o r m a l i z e d )

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

21

0.1

0.01

Normalized Thermal Transient Impedance, Junction-to-Foot

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

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