PRF957,115;中文规格书,Datasheet资料

DATA SHEET

Product speci?cation

Supersedes data of 1999Mar 01

1999Jul 23

DISCRETE SEMICONDUCTORS

PRF957

UHF wideband transistor

book, halfpage

M3D102

UHF wideband transistor

PRF957

FEATURES ?Small size ?Low noise ?Low distortion ?High gain

?Gold metallization ensures excellent reliability.APPLICATIONS

?Communication and instrumentation systems.DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT323package.The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.

PINNING

PIN DESCRIPTION

1base 2emitter 3

collector

Fig.1 Simplified outline (SOT323) and symbol.

Marking code : W2.

handbook, halfpage

MAM062

Top view

QUICK REFERENCE DATA Note

1.T s is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER

CONDITIONS

MIN.TYP .MAX.UNIT C re feedback capacitance I C =0; V CB =6V; f =1MHz ?0.4?pF f T transition frequency

I C =30mA; V CE =6V; f m =1GHz ?8.5?GHz G UM maximum unilateral power gain I C =30mA; V CE =6V;T amb =25°C; f =1GHz ?15?dB NF noise ?gure

ΓS =Γopt ; I C =5mA; V CE =6V;f =1GHz ? 1.3?dB P tot total power dissipation

T s =60°C; note 1??270mW R th j-s thermal resistance from junction to soldering point

P tot =270mW

425

K/W

UHF wideband transistor

PRF957

LIMITING VALUES

In accordance with the Absolute Maximum Rating System IEC 134.Note

1.T s is the temperature at the soldering point of the collector pin.THERMAL CHARACTERISTICS Note

1.T s is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER

CONDITIONS

MIN.MAX.UNIT V CBO collector-base voltage open emitter ?20V V CEO collector-emitter voltage open base ?10V V EBO emitter-base voltage open collector

? 1.5V I C DC collector current ?100mA I C(AV)average collector current ?100mA P tot total power dissipation T s =60°C; note 1?270mW T stg storage temperature ?65+150°C T j junction temperature

175

°C

SYMBOL PARAMETER

CONDITIONS

VALUE UNIT R th j-s thermal resistance from junction to soldering point

P tot =270mW; T s =60°C; note 1

425

K/W

UHF wideband transistor

PRF957

CHARACTERISTICS

T j =25°C unless otherwise speci?ed.Note

1.G UM is the maximum unilateral power gain, assuming s 12 is zero.SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.UNIT

DC characteristics V (BR)CBO collector-base breakdown voltage I C =100μA; I E =020??V V (BR)CEO collector-emitter breakdown voltage

I C =100μA; I B =010??V V (BR)EBO emitter-base breakdown voltage I E =10μA; I C =0 1.5??V I CBO collector-base leakage current V CB =10V; I E =0??100nA I EBO emitter-base leakage current V EB =1V; I C =0??100nA

h FE

DC current gain

I C =5mA; V CE =6V 50100200I C =15mA; V CE =6V

100

?AC characteristics C re feedback capacitance I C =0; V CB =6V; f =1MHz ?0.4?pF f T transition frequency I C =30mA; V CE =6V; f m =1GHz ?8.5?GHz |s 21|2insertion gain

I C =30mA; V CE =6V; f =1GHz ?14?dB G UM

maximum unilateral power gain;note 1

I C =30mA; V CE =6V;T amb =25°C; f =1GHz ?15?dB I C =30mA; V CE =6V;T amb =25°C; f =2GHz

?9.2?dB NF

noise ?gure

ΓS =Γopt ; I C =5mA; V CE =6V;f =1GHz

? 1.3?dB ΓS =Γopt ; I C =5mA; V CE =6V;f =2GHz

1.8

G UM

10s 212

1s 112–()1s 222–()

--------------------------------------------------------dB

log =

UHF wideband transistor PRF957

Fig.2 Power derating as a function of soldering

point temperature.

handbook, halfpage

050100200

400

300

100

200

MGS512

150

T s (°C)

P tot (mW)Fig.3

DC current gain as a function of collector current; typical values.

V CE =6V.

handbook, halfpage

0120

1050MGS513

2030

40I C (mA)

h FE

handbook, halfpage

0412

0.8

0.6

MGS514

0.4

0.2

V CB (V)

C re (pF)Fig.4

Feedback capacitance as a function of collector-base voltage; typical values.

I C =0; f =1MHz.handbook, halfpage

0102040

MGS515

I C (mA)

f T

(GHz)

Fig.5

Transition frequency as a function of collector current; typical values.

V CE =6V; f m =1GHz; T amb =25°C.

UHF wideband transistor PRF957

handbook, halfpage

0102040

gain (dB)20

MGS516

I C (mA)

G max MSG

G UM

Fig.6

Gain as a function of collector current;typical values.

f =1GHz; V CE =6V.handbook, halfpage

0MGS517

102

103

104

gain (dB)

f (MHz)

G UM MSG

G max

Fig.7

Gain as a function of frequency; typical values.

I C =5mA; V CE =6V.

handbook, halfpage

0MGS518

102

103

104

2030

40gain (dB)

f (MHz)

MSG G max

G UM

Fig.8

Gain as a function of frequency; typical values.

I C =15mA; V CE =6V.handbook, halfpage

0MGS519

102

103

104

gain (dB)

f (MHz)

MSG

G UM

G max

Fig.9

Gain as a function of frequency; typical values.

I C =30mA; V CE =6V.

UHF wideband transistor PRF957

handbook, halfpage

MGS520

NF (dB)

(2)(3)(1)

(5)

(6)

(4)10?1

110

102

I C (mA)

Fig.10Minimum noise figure as a function of

collector current; typical values.V CE =6V.(1) f =2GHz (2) f =1.5GHz (3) f =1GHz

(4) f =900MHz (5) f =800MHz (6) f =500MHz.

handbook, halfpage

0MGS521

102

103

104

NF (dB)

f (MHz)

(2)(3)

(1)Fig.11Minimum noise figure as a function of

frequency; typical values.

V CE =6V.(1) I C =30mA (2) I C =15mA (3) I C =5mA.

UHF wideband transistor PRF957

handbook, full pagewidth

MGS522

0.2

0.60.40.81.0

1.0

?0.2

?0.5

0.2

0.51

180°?135°

?90°

?45°

0°

45°

90°unstable region load

unstable region

source

Γopt

(2)

(4)

(5)(6)

(3)

(1)

+0.5

+0.2

135°

Fig.12 Common emitter available gain, noise and stability circles; typical values.

f =1GHz; V CE =6V; I C =5mA;Z o =50?.(1)G =16dB (2)G =15dB (3)G =14dB (4)NF =1.3dB (5)NF =1.5dB (6)NF =1.7dB.

handbook, full pagewidth

MGS523

0.2

0.60.40.81.01.0

+0.5

?0.5

0.20.51

180°

?135°

?90°

?45°

0°

45°

90°

135°

unstable region load

unstable region

source

Γopt

(2)

(3)

(4)

(5)(6)

(7)

(1)

+0.2?0.2

Fig.13 Common emitter available gain, noise and stability circles; typical values.

f =2GHz; V CE =6V; I C =5mA;Z o =50?.

(1)G max =9.95dB (2)G =9dB (3)G =8dB (4)G =7dB (5)NF =1.8dB (6)NF =2dB (7)NF =2.2dB.

UHF wideband transistor

PRF957

APPLICATION INFORMATION SPICE parameters for the PRF957 die Notes

1.These parameters have not been extracted, the

default values are shown.2.C bpb , C bpe : base-bondpad and emitter-bondpad

capacitance to collector.

List of components (see Fig.14)

SEQUENCE No.PARAMETER VALUE UNIT 1IS 0.963fA

2BF 102.3?3NF 1.002?4VAF 64.75V 5IKF 841.1mA 6ISE 35.77fA 7NE 2.138?8BR 90.16?9NR 1.000?10VAR 3.198V 11IKR 25.77mA 12ISC 156.6aA 13NC 1.047?14RB 6.071?15IRB 0.000μA 16RBM 2.478?17RE 0.164?18RC 1.315?19(1)XTB 0.000?20(1)EG 1.110eV 21(1)XTI 3.000?22CJE 1.161pF 23VJE 600.0mV 24MJE 0.394?25TF 3.073ps 26XTF 10.25?27VTF 4.599V 28ITF 53.49mA 29PTF 0.000deg 30CJC 409.9fF 31VJC 287.1mV 32MJC 0.111?33XCJC 0.104?34TR 0.000ps 35(1)CJS 0.000F 36(1)VJS 700.0mV 37(1)

MJS

0.000

FC 0.888?

39(2)C bpb 73.00fF 40(2)C bpe

131.00

DESIGNATION

VALUE

UNIT C be 2fF C cb 100fF C ce 100fF L10.34nH L20.10nH L30.34nH L B 0.60nH L E

0.60

SEQUENCE No.PARAMETER VALUE UNIT QL B =50; QL E =50;QL B (f)=QL B √(f/f c );QL E (f)=QL E √(f/f c );

f c =corner frequency =1GHz.

Fig.14 Package equivalent circuit SOT323.

handbook, halfpage

MBC964

E C

E'L B

L E L3

C cb

C be ce

UHF wideband transistor PRF957

handbook, full pagewidth

MGS525

5040302010

180°

?135°?90°

?45°

0°

45°

90°

135°100 MHz

200 MHz

500 MHz 1 GHz 2 GHz 3 GHz

handbook, full pagewidth

MGS524

0.2

0.60.40.81.01.0

+0.5

+0.2

?0.2

?0.5

0.2

0.5

180°

?135°

?90°

?45°

0°

45°

90°135°

100 MHz

200 MHz

500 MHz

1 GHz

2 GHz

3 GHz

Fig.15 Common emitter input reflection coefficient (s 11); typical values.

V CE =6V; I C =30mA; Z o =50?.

Fig.16 Common emitter forward transmission coefficient (s 21); typical values.

V CE =6V; I C =30mA.

分销商库存信息: NXP

PRF957,115