BAT18中文资料

DATA SHEET

Product speci?cation

Supersedes data of April 1991

1996Mar 13

DISCRETE SEMICONDUCTORS

BAT18

Band-switching diode

book, halfpage

M3D088

Band-switching diode

BAT18

FEATURES

?Continuous reverse voltage:max.35V

?Continuous forward current:max.100mA

?Low diode capacitance:max.1.0pF

?Low diode forward resistance:max.0.7?.APPLICATION ?Band switching.

DESCRIPTION

Planar high performance

band-switching diode in a small rectangular plastic SOT23 SMD package.

PINNING PIN DESCRIPTION 1anode 2not connected 3

cathode

Fig.1 Simplified outline (SOT23) and symbol.

Marking code: A2.

handbook, halfpage 2

1

3

MAM185

2n.c.

1

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise speci?ed.THERMAL CHARACTERISTICS Note

1.Device mounted on a FR4 printed-circuit board.SYMBOL PARAMETER

MIN.MAX.UNIT

V R continuous reverse voltage ?35V I F continuous forward current ?100mA T stg storage temperature ?55+125°C T j

junction temperature

?

125

°C SYMBOL PARAMETER

CONDITIONS

TYP .MAX.UNIT

V F forward voltage I F =100mA; see Fig.2

?

1.2

V I R

reverse current

see Fig.3V R =20V

?100nA V R =20V; T j =60°C

?1μA C d diode capacitance f =1MHz; V R =20V; see Fig.40.8 1.0pF r D

diode forward resistance

I F =5mA; f =200MHz; see Fig.5

0.5

0.7

?

SYMBOL PARAMETER

CONDITIONS

VALUE UNIT R th j-tp thermal resistance from junction to tie-point 330K/W R th j-a thermal resistance from junction to ambient

note 1

500

K/W

Band-switching diode

BAT18

GRAPHICAL DATA

(1)T j =60°C; typical values.(2)T j =25°C; typical values.

(3)T j =25°C; maximum values.

Fig.2

Forward current as a function of forward voltage.

handbook, halfpage

0 1.5100

50

MBG312

0.51

I F (mA)

V (V)F

(1)

(2)

(3)

V R =20V.

Solid line: maximum values.Dotted line: typical values.

Fig.3

Reverse current as a function of junction temperature.

handbook, halfpage 105104

103102

10?1

10

1150

0MBG311

50100

T j ( C)

o I R (nA)Fig.4

Diode capacitance as a function of reverse voltage; typical values.

f =1MHz; T j =25°C.handbook, halfpage

1.5

010

?1MBG313

110

10

2

0.5

1

C d (pF)

V R (V)

Fig.5

Diode forward resistance as a function of forward current; typical values.

f =200MHz; T j =25°C.

handbook, halfpage

2

0102

MBG314

10

1

1

r D (?)

I F (mA)

Band-switching diode

BAT18

PACKAGE OUTLINE

DEFINITIONS LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data Sheet Status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the speci?cation.Fig.6 SOT23.

Dimensions in mm.

book, full pagewidth

MBC846

10max

o 10max

o 30max

o 1.1max

0.550.45

0.1500.090

0.1max 2

1

3

M 0.1A B

0.480.38

TOP VIEW

1.41.2

2.5max

3.02.8

M 0.2A

A

B 0.95 1.9