IR2111英文资料

V CC

V B V S

HO LO

IN

COM IN

up to 600V

TO LOAD

V CC

Features

n Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage dV/dt immune

n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

n CMOS Schmitt-triggered inputs with pull-down n Matched propagation delay for both channels n Internally set deadtime

n High side output in phase with input

Description

The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection

Data Sheet No. PD-6.028C

IR2111

HALF-BRIDGE DRIVER

Product Summary

V OFFSET 600V max.I O +/-200 mA / 420 mA

V OUT 10 - 20V t on/off (typ.)850 & 150 ns Deadtime (typ.)

700 ns

Packages

C ONTROL I NTEGRATE

D C IRCUIT D ESIGNERS M ANUAL B-39

Next Data Sheet

Index Previous Datasheet To Order

IR2111

B-40C ONTROL I NTEGRATED C IRCUIT

D ESIGNERS M

ANUAL

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board Note 1: Logic operational f or V S of -5 to +600V . Logic state held for V S of -5V to -V BS .

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V S offset rating is tested with all supplies biased at 15V differential.

IR2111

C ONTROL I NTEGRATE

D C IRCUIT D ESIGNERS M ANUAL B-41

Dynamic Electrical Characteristics

V BIAS (V CC , V BS ) = 15V, C L = 1000 pF and T A = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

Static Electrical Characteristics

V BIAS (V CC , V BS ) = 15V and T A = 25°C unless otherwise specified. The V IN , V TH and I IN parameters are referenced to COM. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

IR2111

ONTROL I NTEGRATED C IRCUIT D ESIGNERS ANUAL

Lead Definitions

Lead

Symbol Description

IN Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO V B High side floating supply HO High side gate drive output V S High side floating supply return V CC Low side and logic fixed supply LO Low side gate drive output COM

Low side return

Functional Block Diagram

8 Lead DIP SO-8

IR2111

IR2111S

IN

C O M

O

S

V C C

L O

B

To Order

IR2111

C ONTROL I NTEGRATE

D C IRCUIT D ESIGNERS M ANUAL B-43

800?Poly Silicon 4 μm 6 μm 5000?

Al - Si (Si: 1.0% ±0.1%)

6 μm 9 μm 20,000?8 μm X 8 μm PSG (SiO 2)1.5 μm PSG (SiO 2)1.5 μm Full Cut Ablebond 84 - 1Thermo Sonic Au (1.0 mil / 1.3 mil)

Cu Ag

Pb : Sn (37 : 63)8 Lead PDIP / SO-8EME6300 / MP150 / MP190

Device Information

IR2111

B-44C ONTROL I NTEGRATED C IRCUIT D ESIGNERS M ANUAL

Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit

Figure 3. Switching Time Test Circuit

Figure 4. Switching Time Waveform Definition

Figure 5. Deadtime Waveform Definitions HO IN

LO

IN

50%

50%

Figure 6. Delay Matching Waveform Definitions

50%

50%

IN (LO)

IN (HO)

IR2111

C ONTROL I NTEGRATE

D C IRCUIT D ESIGNERS M ANUAL B-45

Figure 9. IR2111 T J vs. Frequency (IRFBC40)

R GATE = 15?, V CC = 15V Figure 10. IR2111 T J vs. Frequency (IRFPE50)

R GATE = 10?, V CC = 15V

Figure 7. IR2111 T J vs. Frequency (IRFBC20)

R GATE = 33?, V CC = 15V Figure 8. IR2111 T J vs. Frequency (IRFBC30)

R GATE = 22?, V CC = 15V

0255075

1001251501E+2

1E+3

1E+41E+5

1E+6

Frequency (Hz)

J u n c t i o n T e m p e r a t u r e (°C )

320V

140V

10V

255075100

1251501E+21E+31E+41E+51E+6

Frequency (Hz)

J u n c t i o n T e m p e r a t u r e (°C )

320V 140V

10V

02550751001251501E+2

1E+3

1E+41E+5

1E+6Frequency (Hz)

J u n c t i o n T e m p e r a t u r e (°C )

320V 140V 10V

2550751001251501E+21E+31E+41E+51E+6

Frequency (Hz)

J u n c t i o n T e m p e r a t u r e (°C )

320V 140V

10V