Si4488DY-T1中文资料

Si4488DY-T1中文资料
Si4488DY-T1中文资料

Vishay Siliconix

Document Number: 71240N-Channel 150-V (D-S) MOSFET

PRODUCT SUMMARY

V DS (V)

r DS(on) (W )

I D (A)

150

0.050 @ V GS = 10 V

5.0

SO-8

S

D S D S D G

D

5

678Top View

234

1D

G

N-Channel MOSFET

Ordering Information:Si4488DY

Si4488DY -T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State Unit

Drain-Source Voltage V DS 150Gate-Source Voltage

V GS "20

V

T A = 25_C 5.0 3.5Continuous Drain Current (T J = 150_C)a T A = 70_C

I D 4.0

2.8

Pulsed Drain Current I DM 50A

Avalanch Current

L = 0.1 mH I AS 25

Continuous Source Current (Diode Conduction)a I S 2.8 1.4A Maximum Power Dissipation T A = 25_C 3.1 1.56a

T A = 70_C P D 2.0

1.0

W Operating Junction and Storage Temperature Range

T J , T stg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical

Maximum

Unit

M i

J ti t A bi t t v 10 sec

3340Maximum Junction-to-Ambient a Steady State R thJA 6580_Maximum Junction-to-Foot (Drain)Steady State

R thJF

17

21

C/W

Notes

a.Surface Mounted on 1” x 1” FR4 Board.

Vishay Siliconix

SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 2.0

V Gate-Body Leakage

I GSS V DS = 0 V, V GS = "20 V "100

nA V DS = 120 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 120 V, V GS = 0 V, T J = 55_C

5

m A On-State Drain Current

a

I D(on)V DS w 5 V, V GS = 10 V 50

A Drain-Source On-State Resistance a r DS(on)V GS = 10 V, I D = 5 A 0.0410.050

W Forward Transconductance a g fs V DS = 15 V, I D = 5 A 18S Diode Forward Voltage a

V SD

I S = 2.8 A, V GS = 0 V

0.75

1.1V

Dynamic b

Total Gate Charge Q g 3036

Gate-Source Charge Q gs V DS = 75 V, V GS = 10 V, I D = 5 A

8.5nC

Gate-Drain Charge Q gd 8.5Gate Resistance R g 0.2

0.85 1.2W

Turn-On Delay Time t d(on)1218Rise Time

t r V 711Turn-Off Delay Time t d(off)DD = 75 V, R L = 15 W

I D ^ 5 A, V GEN = 10 V, R G = 6 W

2233ns Fall Time

t f 1015Source-Drain Reverse Recovery Time

t rr

I F = 2.8 A, di/dt = 100 A/m s 40

70

Notes

a.Pulse test; pulse width v 300 m s, duty cycle v 2%.

b.Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10

20

30

4050

01234567

010

203040

50

2

4

6

8

10

V DS - Drain-to-Source Voltage (V)- D r a i n C u r r e n t (A )

I D V GS - Gate-to-Source Voltage (V)

- D r a i n C u r r e n t (A )

I D

Avalanche Current vs. Time

Vishay Siliconix

Document Number: 71240TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

21

0.1

0.01

Normalized Thermal Transient Impedance, Junction-to-Foot

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

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