Si4488DY-T1中文资料
Vishay Siliconix
Document Number: 71240N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
150
0.050 @ V GS = 10 V
5.0
SO-8
S
D S D S D G
D
5
678Top View
234
1D
G
N-Channel MOSFET
Ordering Information:Si4488DY
Si4488DY -T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State Unit
Drain-Source Voltage V DS 150Gate-Source Voltage
V GS "20
V
T A = 25_C 5.0 3.5Continuous Drain Current (T J = 150_C)a T A = 70_C
I D 4.0
2.8
Pulsed Drain Current I DM 50A
Avalanch Current
L = 0.1 mH I AS 25
Continuous Source Current (Diode Conduction)a I S 2.8 1.4A Maximum Power Dissipation T A = 25_C 3.1 1.56a
T A = 70_C P D 2.0
1.0
W Operating Junction and Storage Temperature Range
T J , T stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
M i
J ti t A bi t t v 10 sec
3340Maximum Junction-to-Ambient a Steady State R thJA 6580_Maximum Junction-to-Foot (Drain)Steady State
R thJF
17
21
C/W
Notes
a.Surface Mounted on 1” x 1” FR4 Board.
Vishay Siliconix
SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 2.0
V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "20 V "100
nA V DS = 120 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 120 V, V GS = 0 V, T J = 55_C
5
m A On-State Drain Current
a
I D(on)V DS w 5 V, V GS = 10 V 50
A Drain-Source On-State Resistance a r DS(on)V GS = 10 V, I D = 5 A 0.0410.050
W Forward Transconductance a g fs V DS = 15 V, I D = 5 A 18S Diode Forward Voltage a
V SD
I S = 2.8 A, V GS = 0 V
0.75
1.1V
Dynamic b
Total Gate Charge Q g 3036
Gate-Source Charge Q gs V DS = 75 V, V GS = 10 V, I D = 5 A
8.5nC
Gate-Drain Charge Q gd 8.5Gate Resistance R g 0.2
0.85 1.2W
Turn-On Delay Time t d(on)1218Rise Time
t r V 711Turn-Off Delay Time t d(off)DD = 75 V, R L = 15 W
I D ^ 5 A, V GEN = 10 V, R G = 6 W
2233ns Fall Time
t f 1015Source-Drain Reverse Recovery Time
t rr
I F = 2.8 A, di/dt = 100 A/m s 40
70
Notes
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
20
30
4050
01234567
010
203040
50
2
4
6
8
10
V DS - Drain-to-Source Voltage (V)- D r a i n C u r r e n t (A )
I D V GS - Gate-to-Source Voltage (V)
- D r a i n C u r r e n t (A )
I D
Avalanche Current vs. Time
Vishay Siliconix
Document Number: 71240TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
21
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e