IRFR3910中文资料

IRFR/U3910

HEXFET ?

Power MOSFET

Description

5/11/98

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 16I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DM

Pulsed Drain Current 60P D @T C = 25°C Power Dissipation 79W Linear Derating Factor 0.53W/°C V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 150mJ I AR Avalanche Current

9.0A E AR Repetitive Avalanche Energy 7.9mJ dv/dt Peak Diode Recovery dv/dt 5.0

V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

––– 1.9R θJA Junction-to-Ambient (PCB mount) **–––50°C/W

R θJA

Junction-to-Ambient

–––

110

Thermal Resistance

D -P AK T O -252AA

I-PA K TO -251AA

Ultra Low On-Resistance l Surface Mount (IRFR3910)l Straight Lead (IRFU3910)

l Advanced Process Technology l Fast Switching

l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

PD - 91364B

IRFR/U3910