APM4925KC-TU中文资料

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.Ordering and Marking Information

Features

Applications

? Power Management in Notebook Computer,

Portable Equipment and Battery Powered Systems

APM4925

Handling Code Temp. Range Package Code

Package Code K : SO -8

Operation Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube

TR : Tape & Reel

APM 4925

APM 4925XXXXX

XXXXX - Date Code

? -30V/-6.1A, R DS(ON) = 24m ?(typ.) @ V GS = -10V

R DS(ON) = 30m ?(typ.) @ V GS = -4.5V

? Super High Density Cell Design ? Reliable and Rugged ? SO-8 Package

*Surface Mounted on FR4 Board, t ≤ 10 sec.

Absolute Maximum Ratings (T A = 25°C unless otherwise noted)

Pin Description

P-Channel MOSFET

S1G1S2G2

D2

D2D1D1G 1

G 2

SO ? 8

Notes

a : Guaranteed by design, not subject to production testing b

: Pulse test ; pulse width ≤ 300μs, duty cycle ≤ 2%

Electrical Characteristics (T A =25°C unless otherwise noted)

Absolute Maximum Ratings (T A = 25°C unless otherwise noted)

-50

-250255075100125150

0.600.750.901.051.201.351.50

0510********

0.00

0.010.020.030.040.050.06

012345

10

20

30

40

50

Typical Characteristics

-I D -D r a i n C u r r e n t (A )

Transfer Characteristics

-V GS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction T emperature

Tj - Junction T emperature (°C)-V G S (t h )-T h r e s h o l d V o l t a g e (V )(N o r m a l z

e d )

On-Resistance vs. Drain Current

-I D - Drain Current (A)

R D S (o n )-O n -R e s

i s t a n c e (?)

0246810

1020

30

4050

Output Characteristics

-I D -D r a i n C u r r e n t (A )

-V DS - Drain-to-Source Voltage (V)

2

3

4

5

6

7

8

9

10

010********

2

4

6

8

10

Typical Characteristics

-V GS - Gate-to-Source Voltage (V)

R D S (o n )-O n -R e s i s t a n c e (?)

On-Resistance vs. Gate-to-Source Voltage

-50

-250255075100125150

0.60.81.01.2

1.41.61.8

R D S (o n )-O n -R e s i s t a n c e (?)(N o r m a l i z e d )

On-Resistance vs. Junction Temperature

T J - Junction T emperature (°C)0612182430

900

1800

2700

3600

4500

-V DS - Drain-to-Source Voltage (V)

Capacitance

C a p a c i t a n c e (p F )

Gate Charge

Q G - Gate Charge (nC)-V G S -G a t e -S o u r c e V o l t a g e (V )

1E-4

1E-30.010.1110

0.010.1

1

0.01

0.1110

020

40

60

80

100

Typical Characteristics

Single Pulse Power

Time (sec)

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

Normalized Thermal Transient Impedence, Junction to Ambient

0.0

0.20.40.60.8 1.0 1.2 1.4

0.110

P o w e r (W )

Source-Drain Diode Forward Voltage

-V SD -Source-to-Drain Voltage (V )

-I S -S o u r c e C u r r e n t (Α)

Package Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

Physical Specifications

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Classification Reflow Profiles

Package Reflow Conditions

Pre-heat temperature

183 C

Peak temperature

Time

°t e m p e r a t u r e

R e lia b ility te s t p ro g ra m

Carrier Tape

Cover Tape Dimensions

(mm) Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

T el : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

T el : 886-2-89191368

Fax : 886-2-89191369