2SK3871-01MR中文资料
Electrical characteristics (T c =25°C unless otherwise specified)
2SK3871-01MR
Zero Gate Voltage Drain Current I DSS V DS =230V V GS =0V V DS =184V V GS =0V V GS =±30V I D =20A V GS =10V I D =20A V DS =25V V CC =180V I D =20A V GS =10V R GS =10 ?
Min. Typ. Max. Units
V V μA nA m ?S pF
nC
V ns μC
ns
Symbol BV DSS V GS(th)
I GSS R DS(on)g fs C iss C oss C rss td (on)t r
td (off)t f Q G Q GS Q GD V SD t rr Q rr
Item
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current
Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance
Reverse Transfer Capacitance Turn-On Time t on Turn-Off Time t off
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D = 250μA V GS =0V I D = 250μA V DS =V GS T ch =25°C T ch =125°C V
DS =0V V DS =75V V GS =0V f=1MH
V CC =115V I D =40A V GS =10V
I F =40A V GS =0V T ch =25°C I F =40A V GS =0V
-di/dt=100A/μs T ch =25°C
2303.0
5.0252501005876
12
2418802820230345121828428.412.656846942.063.018.027.012.018.01.10 1.502302.5
Outline Drawings (mm)
N-CHANNEL SILICON POWER MOSFET
200406
Note *4:I F -I D , -di/dt=50A/μs,V CC BV DSS ,Tch 150°C =<=<=
<
Characteristics
25
50
75
100
125
150
020
40
6080
100
120
P D [W ]
Tc [°C]
4
8
12
16
20
24
010
20
3040
5060
70
8090
1007V
20V 10V
8V
6.5V
VGS=5.5V
I D [A ]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25 °C
0123456789100.1
1
10
100
I D [A ]
VGS[V]
0.1
110100
0.11
10
100
g f s [S ]
ID [A]
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
10
20
30
40
50
60
70
80
0.00
0.05
0.10
0.15
0.20
0.25
0.30
R D S (o n ) [ ? ]
ID [A]
Typical Drain-Source on-state Resistance
-50
-25
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
0.25
R D S (o n ) [ ? ]
Tch [°C]
Drain-Source On-state Resistance
-50
-25
25
50
75
100
125
150
0.0
0.51.01.52.02.53.03.54.04.5
5.0
5.5
6.06.5
7.0
Gate Threshold Voltage vs. Tch
V G S (t h ) [V ]
Tch [°C]0
10
20
30
40
50
60
70
80
024681012
1416
1820 Qg [nC]
V G S [V ]
10
-1100
101
102
10
3
C [F ]
VDS [V]Typical Capacitance
0.00
0.250.500.75 1.00 1.25 1.50 1.75 2.00
0.11
10
100
I F [A ]
VSD [V]
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C
10
-1
10
10
1
10
2
10
10
1
10
2
10
3
t [n s ]
ID [A]0
25
50
75
100
125
150
0100
200
300
400
500
600
700
E A V [m J ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
http://www.fujielectric.co.jp/fdt/scd/
10
10
1
10
2
10
3
10
-1
10
10
1
10
2
I D [A ]
VDS [V]
10
-810
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
10
A v a l a n c h e C u r r e n t I A V [A ]
t AV [sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
-3
10
-2
10
-1
10
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
Z t h (c h -c ) [°C /W ]
t [sec]