G11贴片三极管代码

G11贴片三极管代码
G11贴片三极管代码

A,Dec,2010

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

BFS20 TRANSISTOR (NPN) FEATURES

● Very Low Feedback Capacitance

● Low Current

● Low Voltage

APPLICATIONS

● IF and VHF Applications in Thick and Thin-Film Circuits

MARKING:G11

MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

Symbol

Parameter Value Unit V CBO

Collector-Base Voltage 30 V V CEO

Collector-Emitter Voltage 20 V V EBO

Emitter-Base Voltage 4 V I C

Collector Current 25 mA P C

Collector Power Dissipation 250 mW R ΘJA

Thermal Resistance From Junction To Ambient 500 ℃/W T j

Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter

Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage

V (BR)CBO I C =100μA, I E =0 30 V Collector-emitter breakdown voltage

V (BR)CEO I C =0.1mA, I B =0 20 V Emitter-base breakdown voltage

V (BR)EBO I E =100μA, I C =0 4 V Collector cut-off current

I CBO V CB =20V, I E =0 0.1 μA Collector cut-off current

I CEO V CE =15V, I B =0 0.1 μA Emitter cut-off current

I EBO V EB =4V, I C =0 0.1 μA DC current gain

h FE V CE =10V, I C =7mA 40 120 Collector-emitter saturation voltage

V CE(sat) I C =10mA, I B =1mA 0.3 V Base-emitter voltage

V BE V CE =10V, I C =7mA 0.9 V Transition frequency

f T V CE =10V,I C =5mA, f=100MHz 275 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 1 pF

3. COLLECTOR

https://www.360docs.net/doc/a315541614.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

https://www.360docs.net/doc/a315541614.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

The bottom gasket

The top gasket

3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box

with the tape Seal the box

with the tape Stamp “EMPTY”

on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm

贴片三极管代码WG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3876 TRANSISTOR (NPN) FEATURES · High hFE · Complementary to KTA1505 MAXIMUM RATINGS (T a =25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA, I E =0 35 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 30 V Emitter-base breakdown voltage V (BR)EBO I E = 100μA, I C =0 5 V Collector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA h FE1 V CE =1V, I C = 100mA 70 400 DC current gain h FE2 V CE =6V, I C = 400mA O Y 25 40 Collector-emitter saturation voltage V CE (sat) I C =100mA, I B = 10mA 0.25 V base-emitter voltage V BE V CE =1V, I B = 100mA 1 V Transition frequency f T V CE =6V, I C =20mA 300 MHz Collector output capacitance C ob V CB =6V,I E =0,f=1MH Z 7 pF CLASSIFICATION OF h FE Rank O Y GR(G) Range 70-140 120-240 200-400 Marking WO WY WG ℃ A,May,2011

LY贴片三极管代码

SOT-23 Plastic-Encapsulate Transistors KTC4075 TRANSISTOR (NPN) FEATURES z Excellent h FE linearity z High h FE z Low Noise z Complementary to KTA2014 MAXIMUM RATINGS(T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in M ax U nit Collector-base breakdown voltage V (BR)CBO I C = 100μA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E = 100μA, I C =0 5 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA DC current gain h FE V CE = 6V, I C =2mA 70 700 Collector-emitter saturation voltage V CE (sat ) I C =100mA, I B = 10mA 0.25 V Transition frequency f T V CE =10V, I C = 1mA 80 MHz Collector output capacitance C ob V CE =10V, I E =0, f=1MHz 3.5 pF Noise figure NF V CE =6V,I E =0.1mA, f=1KHz,R G =10K ? 10 dB CLASSIFICATION OF h FE Rank O Y GR BL Range 70~140 120~240 200~400 350~700 Marking LO LY LGR LBL

贴片三极管代码查找贴片,三极管资料及其封装

JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300

贴片三极管代码

t02 SOT23 PDTC143ET N npn 4k7+4k7 bias res t04 SOT23 PMBS3904 N 2N3904 t06 SOT23 PMBS3906 N 2N3906 in T1 IMT1A DA 2 x 2SA1037AK pnp T1 SOT23 BCX17 PNP T1 SOT23 BCX17 N BC327 T1 SOT23 BSS63 N pnp 100V 0.1A t11 SOT23 PDTA114TT N pnp + res t12 SOT23 PDTC114TT N npn + res t16 SOT323 PDTC114EU N npn + res t17 SOT323 PDTC124EU N npn + res t18 SOT23 PDTC143ZT N npn 4k7+47k bias res t19 SOT23 PDTA143ZT N pnp 4k7+47k bias res t1A SOT23 PMMT3904 N 2N3904 t1A SOT323 PMST3904 N 2N3904 t1B SOT23 PMBT2222 N 2N2222 t1B SOT233 PMST2222 N 2N2222 t1D SOT23 PMBTA42 N MPSA42 300V npn t1D SOT323 PMSTA42 N MPSA42 300V npn t1E SOT23 PMBTA43 N MPSA43 200V npn t1E SOT323 PMSTA43 N MPSA43 200V npn t1F SOT23 PMBT5550 N 2N5550 140V npn t1F SOT323 PMST5550 N 2N5550 140V npn t1G SOT23 PMMTA06 N MPSA06 t1G SOT323 PMMTA06 N MPSA06 t1H SOT323 MMBTA05 N MPSA05 t1J SOT23 PMBT2369 N 2N2369 t1J SOT323 PMBT2369 N 2N2369 t1K SOT23 PMBT6428 N MPSA18 50V t1K SOT323 PMBT6428 N MPSA18 50V t1L SOT23 PMBT6429 N MPSA18 45V t1L SOT323 PMBT6429 N MPSA18 45V t1M SOT23 PMBTA13 N MPSA13 darlington t1N SOT23 PMBTA14 N MPSA14 darlington T1N10 SOT223 MMFT1N10T1 MOSFET T1p SOT23 BCX17 N BC327 t1P SOT23 PMBT2222A N 2N2222A t1P SOT323 PMST2222A N 2N2222A t1Q SOT23 PMBT5088 N MPSA18 Vce 30V t1Q SOT323 PMST5088 N MPSA18 Vce 30V t1R SOT323 PMST5089 N MPSA18 Vce 25V T1t SOT23 BCX17 N BC327 T2 IMT2A DB 2 x 2SA1037AK pnp T2 SOT23 BCX18 PNP

贴片三极管代码ZC

A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR (NPN) FEATURES Switching Application MARKING:ZC MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 30 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current 200 mA P C Collector Power Dissipation 330 mW R ΘJA Thermal Resistance From Junction To Ambient 378 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA, I E =0 30 V Collector-emitter breakdown voltage V (BR)CEO * I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 5 V Collector cut-off current I CBO V CB =20V, I E =0 50 nA Emitter cut-off current I EBO V EB =3V, I C =0 50 nA h FE(1) * V CE =1V, I C =2mA 120 360 DC current gain h FE(2) * V CE =1V, I C =50mA 60 Collector-emitter saturation voltage V CE(sat)* I C =50mA, I B =5mA 0.3 V Base-emitter saturation voltage V BE(sat)* I C =50mA, I B =5mA 0.95 V Transition frequency f T V CE =20V,I C =10mA, f=100MHz 300 MHz Collector output capacitance C ob V CB =5V, I E =0, f=140KHz 4 pF Emitter input capacitance C Ib V BE =0.5V, I E =0, f=140KHz 8 pF *Pulse test 3. COLLECTOR https://www.360docs.net/doc/a315541614.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

SMD贴片三极管代码手册

SMD贴片三极管代码手册 索引 (以第一个字符为基准) 0系列 (1) 1系列 (2) 2系列 (8) 3系列 (12) 4系列 (15) 5系列 (18) 6系列 (21) 7系列 (25) 8系列 (27) 9系列 (30) A系列 (31) B系列 (39) C系列 (42) D系列 (44) E系列 (46) F系列 (47) G系列 (52) H系列 (54) J系列 (55) K系列 (56) L系列 (58) M系列 (59) N系列 (61) O系列 (62) P系列 (63) Q系列 (64) R系列 (65) S系列 (68) T系列 (69) U系列 (72) V系列 (73) W系列 (74) X系列 (76) Y系列 (78) Z系列 (80)

0系列 Code Device Manufacturer Base Package Leaded Equivalent/Data 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 005 SSTPAD5 Sil J - PAD-5 5pA leakage diode p01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7 t01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7 01 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 010 SSTPAD10 Sil J - PAD-10 10pA leakage diode 011 SO2369R SGS R SOT23R 2N2369 02 BST82 Phi M - n-ch mosfet 80V 175mA 02 MRF5711L Mot X SOT143 npn RF MRF571 02 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 02 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain p02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res t02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res 03 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 03 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 03 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 03 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 04 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 04 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 04 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 04 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 04 MRF5211L Mot X SOT143 pnp RF MRF521 04 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17.5 dBm -04 PMSS3904 Phi N SOT323 2N3904 t04 PMBS3904 Phi N SOT23 2N3904 05 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 05 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 05 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 05 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 05F TSDF1205R Tfk WQ - fT12GHz npn 4V 5mA 06 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 06 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 06 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 06 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA -06 PMSS3906 Phi N SOT323 2N3906 t06 PMBS3906 Phi N SOT23 2N3906 020 SSTPAD20 Sil J - PAD-20 20pA leakage diode 050 SSTPAD50 Sil J - PAD-50 50pA leakage diode 081 SO2369AR SGS R SOT23R 2N2369A 09 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 09 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA 0A MUN5111DW1 Mot DO SOT363 dual pnp dtr 10k+10k 0A DTC125TUA Roh N SC70 npn dtr R2 100k 50V 100mA 0A DTC125TKA Roh N SC59 npn dtr R2 100k 50V 100mA

贴片三极管代码

贴片三极管代码 JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN

K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300 K2t SOT23 BCW72 N BC107B ZXT300 K3 SOT23 BCW81 NPN K3 SOT23 BCW81 N npn 50V 0.1A 0.2W hfe 420 K3 SOT23 HSMP-3833 A dual HP3830 pin diode K31 BCW81R R npn 50V 0.1A 0.2W hfe 420 K31 SOT23 BCW81R NPN K3p SOT23 BCW81 N npn 50V 0.1A 0.2W hfe 420 K3t SOT23 BCW81 N npn 50V 0.1A 0.2W hfe 420 K4 SOT23 BCW71R NPN K4 SOT23 HSMP-3834 B dual HP3830 pin diode K4 SOT23R BCW71R R BC107A K5 SOT23 BCW72R NPN K5 SOT23R BCW72R R BC107B ZTX300 K6 SOT23 BCV71R NPN K6 SOT23R BCV71R R BC546A K7 SOT23 BCV71 NPN

贴片三极管代码查询表

贴片三极管代码查询表 0 2SC3603 Nec 5 SSTPAD5 Sil p01 PDTA143ET Phi t01 PDTA143ET Phi 1 Gali-1 MC 10 SSTPAD10 Sil 11 SO2369R SGS 2 BST82 Phi 2 MRF5711L Mot 2 DTCC114T Roh 2 Gali-2 MC p02 PDTC143ET Phi t02 PDTC143ET Phi 3 Gali-3 MC 3 DTC143TE Roh 3 DTC143TUA Roh 3 DTC143TKA Roh 4 DTC114TCA Roh 4 DTC114TE Roh 4 DTC114TUA Roh 4 DTC114TKA Roh 4 MRF5211L Mot 4 Gali-4 MC -4 PMSS3904 Phi t04 PMBS3904 Phi 5 Gali-4 MC 5 DTC124TE Roh 5 DTC124TUA Roh 5 DTC124TKA Roh 05F TSDF1205R Tfk 6 Gali-6 MC 6 DTC144TE Roh 6 DTC144TUA Roh 6 DTC144TKA Roh -6 PMSS3906 Phi t06 PMBS3906 Phi 20 SSTPAD20 Sil

50 SSTPAD50 Sil 81 SO2369AR SGS 09 DTC115TUA Roh 09 DTC115TKA Roh 0A MUN5111DW1 Mot 0A DTC125TUA Roh 0A DTC125TKA Roh 0B MUN5112DW1 Mot 0C MUN5113DW1 Mot 0D MUN5114DW1 Mot 0E MUN5115DW1 Mot 0F MUN5116DW1 Mot 0G MUN5130DW1 Mot 0H MUN5131DW1 Mot 0J MUN5132DW1 Mot 0K MUN5133DW1 Mot 0L MUN5134DW1 Mot 0M MUN5135DW1 Mot 1 2SC3587 Nec 1 BA277 Phi 1 (red) BB669 Sie 10 MRF9411L Mot 10A PZM10NB2A Phi 10V PZM10NB Phi 10Y BZV49-C10 Phi 11 MRF9511L Mot 11 MUN5311DW1 Mot 11 PDTA114EU Phi p11 PDTA114TT Phi t11 PDTA114TT Phi 11A PZM11NB2A Phi 11A MMBD1501A Nat 11V PZM11NB Phi 11Y BZV49-C11 Phi 12 MUN5312DW1 Mot 12 DTA123EUA Rho 12 DTA123EKA Rho p12 PDTC114TT Phi t12 PDTC114TT Phi 12A MMBD1502A Nat 12A PZM12NB2A Phi 12E ZC2812E Zet

贴片三极管代码对应形号

贴片三极管代码对应形号 技术文章2008-01-06 13:42:15 阅读58 评论1 字号:大中小 晶体管型号 代 码 晶体管型 号 代 码 9011 1T BC817-40 6C 9012 2T BC846A 1A 9013 J3 BC846B 1B 9014 J6 BC847A 1E 9015 M6 BC847B 1F 9016 Y6 BC847C 1G 9018 J8 BC848A 1J S8050 J3Y BC848B 1K S8550 2TY BC848C 1L 8050 Y1 BC856A 3A 8550 Y2 BC856B 3B 2SA1015 BA BC857A 3E 2SC1815 HF BC857B 3F 2SC945 CR BC858A 3J MMBT3904 1AM BC858B 3K MMBT3906 2A BC858C 3L MMBT2222 1P 2SA733 CS MMBT5401 2L UN2111 V1 MMBT5551 G1 UN2112 V2 MMBTA42 1D UN2113 V3 MMBTA92 2D UN2211 V4 BC807-16 5A UN2212 V5 BC807-25 5B UN2213 V6 BC807-40 5C 2SC3356 R23 BC817-16 6A 2SC3838 AD BC817-25 6B 2N7002 702 t02 SOT23 PDTC143ET N npn 4k7+4k7 bias res t04 SOT23 PMBS3904 N 2N3904 t06 SOT23 PMBS3906 N 2N3906 in

贴片三极管代码 型号 封装

贴片三极管代码型号封装 时间:2011-07-14 08:37来源:未知作者:电路网点击:次JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode

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