DTM4925原厂规格书

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FEATURES

?Halogen-free

?TrenchFET ? Power MOSFET ?100 % UIS Tested

APPLICATIONS

?Load Switches - Notebook PCs - Desktop PCs PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)d, e

Q g (Typ.)- 30

0.024 at V GS = - 10 V - 815 nC

0.033 at V GS = - 4.5 V

- 8

Notes:

a.Surface mounted on 1" x 1" FR4 board.

b.t = 10 s.

c.Maximum under Steady State conditions is 85 °C/W.

d.Based on T C = 25 °C.

e.Limited by package.

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter

Symbol Limit Unit Drain-Source Voltage V DS - 30V

Gate-Source Voltage

V GS

± 20Continuous Drain Current (T J = 150 °C)

T C = 25 °C I D - 8.0e A

T C = 70 °C - 8.0e T A = 25 °C - 7.3a, b T A = 70 °C - 5.9a, b Pulsed Drain Current

I DM - 32e Continuous Source-Drain Diode Current T C = 25 °C I S - 4.1T A = 25 °C - 2.0a, b Avalanche Current

L = 0.1 mH I AS - 20Single-Pulse Avalanche Energy

E AS 20mJ

Maximum Power Dissipation T C = 25 °C P D 5.0W

T C = 70 °C 3.2T A = 25 °C 2.5a, b T A = 70 °C

1.6a, b Operating Junction and Storage T emperature Range T J , T stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical Maximum

Unit Maximum Junction-to-Ambient a, c t ≤ 10 s R thJA 3850

°C/W

Maximum Junction-to-Foot

Steady State

R thJF 2025

S 1D 1G 1D 1S 2D 2G 2

D 2

SO-8

5

678Top View

234

1

2

Notes:

a.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b.Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = - 250 μA

- 30

V V DS Temperature Coefficient ΔV DS /T J I D = - 250 μA - 31mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J 4.5

Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = - 250 μA - 1.0- 3.0V Gate-Source Leakage

I GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = - 30 V, V GS = 0 V - 1μA V DS = - 30 V, V GS = 0 V , T J = 55 °C

- 5

On-State Drain Current a

I D(on) V DS ≥ - 10 V , V GS = - 10 V - 30

A Drain-Source On-State Resistance a R DS(on)V GS = - 10 V , I D = - 7.3 A 0.0210.024ΩV GS = - 4.5 V , I D = - 6.2 A 0.0310.033

Forward T ransconductance a g fs V DS = - 10 V, I D = - 9.1 A

23S

Dynamic b

Input Capacitance C iss V DS = - 15 V , V GS = 0 V , f = 1 MHz

1350pF

Output Capacitance

C oss 215Reverse Transfer Capacitance C rss 185Total Gate Charge Q g V DS = - 15 V, V GS = - 10 V , I

D = - 9.1 A 3250nC V DS = - 15 V , V GS = - 4.5 V , I D = - 9.1 A 1525

Gate-Source Charge Q gs 4Gate-Drain Charge Q gd 7.5Gate Resistance R g f = 1 MHz

5.8Ω

Turn-On Delay Time t d(on) V DD = - 15 V , R L = 15 Ω I D ? - 1 A, V GEN = - 10 V , R g = 1 Ω

1015ns Rise Time

t r 815Turn-Off DelayTime t d(off) 4570Fall Time

t f 1225Turn-On Delay Time t d(on) V DD = - 15 V , R L = 15 Ω I D ? - 1 A, V GEN = - 4.5 V, R g = 1 Ω4270Rise Time

t r 3560Turn-Off DelayTime t d(off) 4070Fall Time

t f

16

30

Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I S T C = 25 °C

- 4.1A Pulse Diode Forward Current I SM - 32Body Diode Voltage

V SD I S = - 2 A, V GS = 0 V

- 0.75- 1.2V Body Diode Reverse Recovery Time t rr I F = - 2 A, dI/dt = 100 A/μs, T J = 25 °C

3460ns Body Diode Reverse Recovery Charge Q rr 2240

nC Reverse Recovery Fall Time t a 11ns

Reverse Recovery Rise Time

t b

23

Gate Charge

Capacitance

On-Resistance vs. Junction Temperature

3

4

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

5

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

*The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Power, Junction-to-Foot

Power Derating, Junction-to-Ambient

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Normalized Thermal Transient Impedance, Junction-to-Foot 6

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DIM MILLIMETERS

INCHES

Min Max Min Max A 1.35 1.750.0530.069A 10.100.200.0040.008B 0.350.510.0140.020C 0.190.250.00750.010D 4.80 5.000.1890.196E 3.80

4.00

0.150

0.157

e 1.27 BSC

0.050 BSC

H 5.80 6.200.2280.244h 0.250.500.0100.020L 0.500.930.0200.037q 0°8°0°8°S

0.440.64

0.018

0.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

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