MRF6S27015GNR1;MRF6S27015NR1;中文规格书,Datasheet资料

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2000 to

2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

?Typical Single-Carrier W-CDMA Performance: V DD = 28 Volts, I DQ =

160 mA, P out = 3 Watts Avg., f = 2600 MHz, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

Drain Efficiency — 22%

ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth

?Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW

Output Power

Features

?Characterized with Series Equivalent Large-Signal Impedance Parameters

?Internally Matched for Ease of Use

?Qualified Up to a Maximum of 32 V DD Operation

?Integrated ESD Protection

?225°C Capable Plastic Package

?RoHS Compliant

?In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit Drain-Source Voltage V DSS-0.5, +68Vdc Gate-Source Voltage V GS-0.5, +12Vdc Storage Temperature Range T stg-65 to +150°C Case Operating Temperature T C150°C Operating Junction Temperature(1,2)T J225°C Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3)Unit Thermal Resistance, Junction to Case

Case Temperature 80°C,7.5 W Avg., Two-Tone

Case Temperature 79°C, 3W CW

RθJC

2.0

2.2

°C/W

1.Continuous use at maximum temperature will affect MTTF.

2.MTTF calculator available at https://www.360docs.net/doc/b06123739.html,/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to https://www.360docs.net/doc/b06123739.html,/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6S27015N

Rev. 2, 12/2008 Freescale Semiconductor

Technical Data

RF Device Data

Freescale Semiconductor

MRF6S27015NR1 MRF6S27015GNR1Table 3. ESD Protection Characteristics

Test Methodology

Class Human Body Model (per JESD22-A114)1A (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating Package Peak Temperature

Unit Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics (T C = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(V DS = 10 Vdc, I D = 40 μAdc)V GS(th) 1.5 2.2 3.5Vdc Gate Quiescent Voltage

(V DS = 28 Vdc, I D = 160 mAdc)

V GS(Q)— 2.8—Vdc Fixture Gate Quiescent Voltage (1)

(V DD = 28 Vdc, I D = 160 mAdc, Measured in Functional Test)V GG(Q) 2.2 3.1 4.4Vdc Drain-Source On-Voltage

(V GS = 10 Vdc, I D = 0.4 Adc)V DS(on)

—

0.27

0.4

Vdc

Dynamic Characteristics (2)

Reverse Transfer Capacitance

(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss —11.6—pF Output Capacitance

(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)

C oss

—

22.9

—

Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 160 mA, P out = 3 W Avg., f = 2600 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @0.01% Probability on CCDF. Power Gain G ps 12.51416dB Drain Efficiency

ηD 1922—%Adjacent Channel Power Ratio ACPR —-45-42dBc Input Return Loss

IRL

—

-18

-9

1.V GG = 11/10 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to T est Circuit schematic.

2.Part internally input matched.

3.Measurement made with device in straight lead configuration before any lead forming operation is applied.

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MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic

Z110.143″ x 0.816″ Microstrip Z120.101″ x 0.667″ Microstrip Z130.073″ x 0.485″ Microstrip Z140.120″ x 0.021″ Microstrip Z150.407″ x 0.170″ Microstrip Z160.714″ x 0.066″ Microstrip Z170.496″ x 0.066″ Microstrip Z180.475″ x 0.050″ Microstrip Z190.480″ x 0.050″ Microstrip

PCB

Taconic RF-35, 0.030″, εr = 3.5

Z10.503″ x 0.066″ Microstrip Z20.905″ x 0.066″ Microstrip

Z30.371″ x 0.300″ x 0.049″ Taper Z40.041″ x 0.016″ Microstrip Z50.245″ x 0.851″ Microstrip Z60.248″ x 0.851″ Microstrip Z70.973″ x 0.050″ Microstrip Z80.085″ x 0.485″ Microstrip Z90.091″ x 0.667″ Microstrip Z100.138″ x 0.816″ Microstrip

Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer C1100 nF Chip Capacitor CDR33BX104AKYS Kemet C2 4.7 pF Chip Capacitor ATC100B4R7BT500XT ATC C39.1 pF Chip Capacitor ATC100B9R1BT500XT ATC C4, C5, C68.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C7, C8, C9, C1010 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C1110 μF, 35 V Tantalum Chip Capacitor T491D106K035AT Kemet R1 1 K Ω, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R210 K Ω,1/4 W Chip Resistor CRCW12061002FKEA Vishay R3

10 Ω, 1/4 W Chip Resistor

CRCW120610R0FKEA

Vishay

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RF Device Data

Freescale Semiconductor

MRF6S27015NR1 MRF6S27015GNR1Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout

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MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 5. Two-Tone Power Gain versus

Output Power 12

P out , OUTPUT POWER (WATTS) PEP

1310

G p s , P O W E R G A I N (d B )

Figure 6. Third Order Intermodulation Distortion

versus Output Power

1P out , OUTPUT POWER (WATTS) PEP

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RF Device Data

Freescale Semiconductor

MRF6S27015NR1 MRF6S27015GNR1TYPICAL CHARACTERISTICS

I M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )

?65

?15?40?50?30?20?60Figure 10. Single-Carrier W-CDMA ACPR, ALT1, Power

Gain and Drain Efficiency versus Output Power

P out , OUTPUT POWER (WATTS) AVG.

ηD ,1

?55?45?35?25https://www.360docs.net/doc/b06123739.html,/

MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

10181

P out , OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

1716

15141312G p s , P O W E R G A I N (d B )

11Figure 12. Power Gain versus Output Power

P out , OUTPUT POWER (WATTS) CW

E V M , E R R O R V E C T O R M A G N I T U D E (%)

Figure 13. Drain Efficiency and Error Vector

Magnitude versus Output Power

0.5

P out , OUTPUT POWER (dBm)

31510

2.55

213536

1.5

ηD , D R A I N E F F I C I E N C Y (%)

20122232526272824343329303231250

109

T J , JUNCTION TEMPERATURE (°C)

Figure 14. MTTF versus Junction Temperature

This above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 3 W Avg., and ηD = 22%.MTTF calculator available at https://www.360docs.net/doc/b06123739.html,/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.

108

107

106

110

130

150

170

190

M T T F (H O U R S )

210

230

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RF Device Data

Freescale Semiconductor

MRF6S27015NR1 MRF6S27015GNR1W-CDMA TEST SIGNAL

?60?110

?10(d B )

?20?30?40?50?70?80?90?100

7.2

1.8

5.4

3.6

?1.8

?3.6?5.4?9

f, FREQUENCY (MHz)

Figure 15. CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal

?7.210

0.0001

1000

PEAK?TO?AVERAGE (dB)

10.10.010.0012

P R O B A B I L I T Y (%)

Figure 16. Single-Carrier W-CDMA Spectrum

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MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

Z o = 5 Ω

Z load

f = 2500 MHz

Z source

f = 2700 MHz

f = 2500 MHz

f = 2700 MHz

V DD = 28 Vdc, I DQ = 160 mA, P out = 3 W Avg.f MHz Z

source

W Z load W 2500 4.059 - j2.284 3.380 - j0.543

2525 3.679 - j2.593 3.265 - j0.5462550 3.006 - j2.574 3.077 - j0.4492575 2.355 - j2.190 2.892 - j0.3362600 2.075 - j1.657 2.727 - j0.1822625 1.930 - j1.179 2.564 - j0.0342650 1.973 - j0.771 2.435 + j0.1402675 2.017 - j0.557 2.286 + j0.3402700

2.024 - j0.379

2.227 + j0.538

Z source =Test circuit impedance as measured from

gate to ground.Z load

=Test circuit impedance as measured

from drain to ground.

source

load

Output Matching Network

Figure 17. Series Equivalent Source and Load Impedance

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RF Device Data

Freescale Semiconductor

MRF6S27015NR1 MRF6S27015GNR1Table 7. Common Source Scattering Parameters (V DD = 28 V, I DQ = 160 mA, T C = 25°C, 50 ohm system)

f MH S 11

S 21

S 12

S 22

MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ5000.984-178.2 1.45339.20.001-109.80.870-122.35500.984-179.0 1.18036.50.000-121.00.888-127.66000.986180.00.95834.40.000159.60.901-132.06500.987179.00.77633.00.001118.40.911-135.87000.987178.10.62732.30.001106.50.921-139.17500.986177.30.50232.50.001104.20.931-142.18000.985176.50.39734.10.00296.00.940-144.88500.985175.80.30837.70.00295.60.944-147.39000.984175.10.23544.50.00394.00.951-149.59500.983174.50.18056.50.00391.20.956-151.510000.982173.80.14675.60.00391.20.962-153.410500.981173.20.14298.90.00489.90.965-155.211000.980172.50.163118.00.00489.20.969-156.811500.978171.90.199129.90.00588.90.973-158.312000.976171.20.243136.60.00587.40.976-159.812500.974170.50.291140.20.00686.50.980-161.113000.970169.80.342141.80.00686.30.983-162.413500.966169.00.395142.10.00684.60.986-163.714000.960168.30.452141.50.00684.80.988-164.914500.953167.50.514140.20.00786.90.990-166.115000.945166.60.580138.40.00792.50.993-167.315500.933165.80.655135.90.009100.30.992-168.416000.918164.90.738132.50.01193.70.994-169.416500.901164.10.828128.40.01383.60.996-170.417000.879163.20.925123.50.01475.40.997-171.617500.850162.5 1.030117.60.01469.10.998-172.818000.815162.2 1.139110.80.01562.80.995-173.918500.775162.5 1.246102.70.01655.80.991-175.019000.734164.0 1.33793.60.01648.20.984-176.019500.700167.0 1.39983.50.01540.30.976-176.920000.683171.0 1.42073.10.01533.20.966-177.620500.687175.1 1.39662.90.01426.50.957-178.021000.710178.5 1.33853.40.01222.10.951-178.321500.741-179.3 1.25945.00.01119.80.948-178.622000.774-178.2 1.16937.60.01019.70.947-178.922500.805-177.8 1.07931.10.00919.70.947-179.223000.832-177.90.99325.80.00819.60.948-179.52350

0.855

-178.2

0.917

21.2

0.007

22.6

0.950

-179.9(continued)

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分销商库存信息:

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MRF6S27015GNR1MRF6S27015NR1