IKP15N60T
Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
?Very low V CE(sat) 1.5 V (typ.)
?Maximum Junction Temperature 175 °C
?Short circuit withstand time – 5μs
?Designed for :
- Frequency Converters
- Uninterrupted Power Supply
? TrenchStop? and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
?Positive temperature coefficient in V CE(sat)
? Low EMI
?Pb-free lead plating; RoHS compliant
?Very soft, fast recovery anti-parallel EmCon HE diode
?Qualified according to JEDEC1 for target applications
?Complete product spectrum and PSpice Models :https://www.360docs.net/doc/b19274562.html,/igbt/
Type V CE I C V CE(sat),Tj=25°C T j,max Marking
Code Package
IKP15N60T 600V 15A 1.5V 175°C K15T60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol
Value
Unit Collector-emitter voltage V C E600 V
DC collector current, limited by T jmax T C = 25°C
T C = 100°C I C
30
15
Pulsed collector current, t p limited by T jmax I C p u l s45 Turn off safe operating area (V CE ≤ 600V, T j≤ 175°C) -45
Diode forward current, limited by T jmax T C = 25°C
T C = 100°C I F
30
15
Diode pulsed current, t p limited by T jmax I F p u l s45
A
Gate-emitter voltage V G E±20 V
Short circuit withstand time2)
V GE = 15V, V CC ≤ 400V, T j≤ 150°C
t S C 5 μs
Power dissipation T C = 25°C P t o t130 W Operating junction temperature T j-40...+175
Storage temperature T s t g-55...+175
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s 260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-220-3-1
Thermal Resistance Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, junction – case
R t h J C
1.15 Diode thermal resistance, junction – case R t h J C D
1.9
Thermal resistance, junction – ambient R t h J A 62
K/W
Electrical Characteristic, at T j = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions min. Typ. max. Unit
Static Characteristic
Collector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =0.2mA 600 - - Collector-emitter saturation voltage
V C E (s a t )
V G E = 15V, I C =15A T j =25°C T j =175°C
- - 1.5 1.9 2.05 - Diode forward voltage
V F
V G E =0V, I F =15A T j =25°C T j =175°C
- - 1.65 1.6 2.05 - Gate-emitter threshold voltage V G E (t h ) I C =210μA,V C E =V G E 4.1 4.9 5.7
V Zero gate voltage collector current
I C E S V C E =600V , V G E =0V T j =25°C T j =175°C
- -
- -
40 1000
μA
Gate-emitter leakage current I G E S V C E =0V,V G E =20V - - 100 nA Transconductance g f s V C E =20V, I C =15A - 8.7 - S Integrated gate resistor R G i n t
- ?
Dynamic Characteristic Input capacitance C i s s - 860 - Output capacitance
C o s s - 55 - Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz
- 24 - pF Gate charge
Q G a t e V C C =480V, I C =15A V G E =15V
- 87 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case L E - 7 - nH Short circuit collector current 1)
I C (S C )
V G E =15V,t S C ≤5μs
V C C = 400V, T j ≤ 150°C
- 137.5 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Switching Characteristic, Inductive Load, at T j =25 °C
Value
Parameter Symbol Conditions min. Typ. max. Unit
IGBT Characteristic Turn-on delay time t d (o n ) - 17 - Rise time
t r - 11 - Turn-off delay time t d (o f f ) - 188 - Fall time t f - 50 - ns Turn-on energy E o n - 0.22 - Turn-off energy E o f f - 0.35 - Total switching energy
E t s
T j =25°C,
V C C =400V,I C =15A,V G E =0 /15V, R G =15?, L σ1)
=154nH, C σ1)
=39pF
Energy losses include “tail” and diode reverse recovery.
- 0.57 -
mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 34 - ns Diode reverse recovery charge Q r r - 0.24 - μC Diode peak reverse recovery current I r r m
- 10.4 - A Diode peak rate of fall of reverse recovery current during t b
di r r /dt
T j =25°C,
V R =400V, I F =15A, di F /dt =825A/μs
- 718 - A/μs
Switching Characteristic, Inductive Load, at T j =175 °C
Value
Parameter Symbol Conditions min. Typ. max. Unit
IGBT Characteristic Turn-on delay time t d (o n ) - 17 - Rise time
t r - 15 - Turn-off delay time t d (o f f ) - 212 - Fall time t f - 79 - ns Turn-on energy E o n - 0.34 - Turn-off energy E o f f - 0.47 - Total switching energy
E t s T j =175°C,
V C C =400V,I C =15A,V G E =0/15V, R G = 15 ? L σ1)
=154nH, C σ1)
=39pF
Energy losses include “tail” and diode reverse recovery. - 0.81 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 140 - ns Diode reverse recovery charge Q r r - 1.0 - μC Diode peak reverse recovery current I r r m
- 14.7 - A Diode peak rate of fall of reverse recovery current during t b
di r r /dt
T j =175°C
V R =400V, I F =15A, di F /dt =825A/μs
- 495 - A/μs
1)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.
I C , C O L L E C T O R C U R R E N T
10Hz
100Hz
1kHz
10kHz
100kHz
0A
10A
20A
30A
40A
I C , C O L L E C T O R C U R R E N T
1V
10V
100V 1000V
0.1A
1A
10A
f , SWITCHING FREQUENCY
V CE , COLLECTOR -EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T j ≤ 175°C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 15?) Figure 2. Safe operating area
(D = 0, T C = 25°C, T j ≤175°C; V GE =15V)
P t o t , P O W E R D I S S I P A T I O N
25°C
50°C 75°C 100°C 125°C 150°C
0W 20W 40W 60W 80W 100W 120W
I C , C O L L E C T O R C U R R E N T
0A
10A
20A
30A
T C , CASE TEMPERATURE
T C , CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (T j ≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(V GE ≥ 15V, T j ≤ 175°C)
I C , C O L L E C T O R C U R R E N T
0V
1V
2V 3V 0A
5A 10A 15A 20A 25A
30A 35A
40A I C , C O L L E C T O R C U R R E N T
0V 1V
2V 3V
0A
5A
10A 15A 20A 25A
30A 35A
40A
V CE , COLLECTOR -EMITTER VOLTAGE
V CE , COLLECTOR -EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T j = 25°C)
Figure 6. Typical output characteristic
(T j = 175°C)
I C , C O L L E C T O R C U R R E N T
0A
5A 10A
15A 20A 25A 30A 35A
V C E (s a t ), C O L L E C T O R -E M I T T S A T U R A T I O N V O L T A G E
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
V GE , GATE-EMITTER VOLTAGE
T J , JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(V CE =20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (V GE = 15V)
t , S W I T C H I N G T I M
E S
0A
5A
10A
15A
20A
25A
t , S W I T C H I N G T
I M E S
10?
20?
30?
40?
50?
I C , COLLECTOR CURRENT
R G , GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, T J =175°C,
V CE = 400V, V GE = 0/15V, R G = 15?, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a
function of gate resistor (inductive load, T J = 175°C,
V CE = 400V, V GE = 0/15V, I C = 15A, Dynamic test circuit in Figure E)
t , S W I T C H I N G T I
M E S
25°C 50°C
75°C
100°C 125°C 150°C
V G E (t h ), G A T E -E M I T T T R S H O L D V O L
T A G E
-50°C
0°C 50°C 100°C 150°C
T J , JUNCTION TEMPERATURE
T J , JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 15A, R G =15?, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature (I C = 0.21mA)
E , S W I T C H I N G E N E R G Y L O S S E S
0A
5A 10A 15A 20A 25A
0.0m
0.4m 0.8m 1.2m 1.6m E , S W I T C H I N G E N E R G Y L O S S E S
0?10?20?30?40?50?60?70?80?
I C , COLLECTOR CURRENT
R G , GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current (inductive load, T J = 175°C,
V CE = 400V, V GE = 0/15V, R G = 15?, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses
as a function of gate resistor (inductive load, T J = 175°C,
V CE = 400V, V GE = 0/15V, I C = 15A, Dynamic test circuit in Figure E)
E , S W I T C H I N G E N E R G Y L O S S E S
E , S W I T C H I N G E N E R G Y L O S S E S
0.0m 0.2m 0.4m 0.6m 0.8m 1.0m 1.2m
T J , JUNCTION TEMPERATURE
V CE , COLLECTOR -EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V CE = 400V,
V GE = 0/15V, I C = 15A, R G = 15?, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter voltage
(inductive load, T J = 175°C,
V GE = 0/15V, I C = 15A, R G = 15?, Dynamic test circuit in Figure E)
V G E , G A T E -E M I T
T E R V O L T A G E
0V
5V
10V
15V
c , C A P A C I T A N C
E
Q GE , GATE CHARGE
V CE , COLLECTOR -EMITTER VOLTAGE
Figure 17. Typical gate charge
(I C =15 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage (V GE =0V, f = 1 MHz)
I C (s c ), s h o r t c i r c u i t C O L L E C T O R C U R R E N T
12V
14V 16V 18V
0A 50A
100A
150A
200A
t S C , S H O R T C I R C U I T W I T
H S T A N D T I M E
10V
11V 12V 13V 14V
0μs
2μs
4μs
6μs
8μs
10μs
12μs
V GE , GATE -EMITTETR VOLTAGE
V GE , GATE -EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(V CE ≤ 400V, T j ≤ 150°C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage (V CE =600V , start at T J =25°C, T Jmax <150°C)
Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E
1μs
10μs 100μs 1ms 10ms 100ms 10-2
K/W
10-1
K/W
100
K/W
Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E
1μs
10μs 100μs 1ms 10ms 100ms
10-2
10-1
100
t P , PULSE WIDTH
t P , PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = t p / T )
Figure 22. Diode transient thermal
impedance as a function of pulse width (D =t P /T )
t r r , R E V E R S E R E C O V E R Y T I M E
0ns
40ns
80ns
120ns
160ns
200ns
Q r r , R E V E R S E R E C O V E R Y C H A R G E
400A/μs
600A/μs 800A/μs
0.0μC
0.2μC
0.4μC
0.6μC
0.8μC
1.0μC
di F /dt , DIODE CURRENT SLOPE
di F /dt , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope (V R =400V, I F =15A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(V R = 400V, I F = 15A,
Dynamic test circuit in Figure E)
I r r , R E V E R S E R E C O V E R Y C U R R E N T
400A/μs 600A/μs 800A/μs
0A
2A 4A 6A 8A 10A 12A 14A 16A
r r D I O D E P E A K R A T E O F F A L L O F R E V E R S E R E C O V E R Y C U R R E N
T
di F /dt , DIODE CURRENT SLOPE
di F /dt , DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(V R = 400V, I F = 15A,
Dynamic test circuit in Figure E) Figure 26. Typical diode peak rate of fall of
reverse recovery current as a function of diode current slope (V R =400V, I F =15A,
Dynamic test circuit in Figure E)
I F , F O R W A R D C U R R
E N T
0V 1V 2V
0A
10A
20A
30A
40A
V F , F O R W A R D V O L T A G
E
0°C
50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
V F , FORWARD VOLTAGE
T J , JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
PG-TO-220-3-1
PG-TO247-3-21
Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF.
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
? Infineon Technologies AG 9/12/07.
All Rights Reserved.
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