IRLR2703TRPBF;IRLU2703PBF;IRLR2703TRLPBF;IRLR2703PBF;中文规格书,Datasheet资料

IRLR/U2703PbF

HEXFET ?

Power MOSFET

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

––– 3.3R θJA Case-to-Ambient (PCB mount)**–––50°C/W

R θJA

Junction-to-Ambient

–––

110

Thermal Resistance

Description

12/6/04

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D-Pak TO-252AA

I-Pak TO-251AA

l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2703)l Straight Lead (IRLU2703)

l Advanced Process Technology l Fast Switching

l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 23 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 16A I DM

Pulsed Drain Current 96P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.30W/°C V GS Gate-to-Source Voltage

± 16V E AS Single Pulse Avalanche Energy 77mJ I AR Avalanche Current

14A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0

V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 95083A

l

Lead-Free

IRLR/U2703PbF

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Source-Drain Ratings and Characteristics

V DD = 15V, starting T J = 25°C, L =570μH R G = 25?, I AS = 14A. (See Figure 12)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width ≤ 300μs; duty cycle ≤ 2%.

This is applied for I-PAK, L S of D-PAK is measured between lead and center of die contact. Uses IRL2703 data and test conditions.

I SD ≤ 14A, di/dt ≤ 140A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C

Notes:

Caculated continuous current based on maximum allowable

junction temperature; Package limitation current = 20A.

Electrical Characteristics @ T = 25°C (unless otherwise specified)

IRLR/U2703PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics

0.1

110100

10000.1

1

10

100

I , D r a i n -t o -S o u r c e C u r r e n t (A )

D V , Drain-to-Source Voltage (V)DS

0.1

1

10

100

10000.1

1

10

100

I , D r a i n -t o -S o u r c e C u r r e n t (A )

D V , Drain-to-Source Voltage (V)DS

0.1

1

10

1002

3

4

5

6

7

8

9

10

GS V , Gate-to-Source Voltage (V)D I , D r a i n -t o -S o u r c e C u r r e n t (A )

0.0

0.5

1.0

1.5

2.0

-60-40-20

20

40

60

80100120140160180

J

T , Junction Temperature (°C)R , D r a i n -t o

-S o u r c e O n R e s i s t a n c e D S (o n

)(N o r m a l i z e d )

IRLR/U2703PbF

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Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

0200

400600

800

1000

1

10

100

C , C a p a c i t a n c e (p F )

DS V , Drain-to-Source Voltage (V)

03

6

9

12

15

4

8

12

16

20

Q , Total Gate Charge (nC)G

V , G a t e -t o -S o u r c e V o l t a g

e (V )G

S 110

1000.4

0.8

1.2

1.6

2.0

2.4

V , Source-to-Drain Voltage (V)I , R e v e r s e D r a i n C u r r e n t (A )

SD

S D 1

10

100

1000

1

10

100

V , Drain-to-Source Voltage (V)DS

I , D r a i n C u r r e n t (A )D

IRLR/U2703PbF

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Fig 10a.

Switching Time Test Circuit

V V d(on)

r

d(off)

f

Fig 10b. Switching Time Waveforms

V DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Case Temperature

0.01

0.1

1

10

0.00001

0.00010.0010.010.11

t , Rectangular Pulse Duration (sec)1

t h

J C T h e r m a l R e s p o n s e (Z )

IRLR/U2703PbF

6

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V

DS

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

I AS

V DD

40

80

120

160

25

50

75

100

125

150

175

J

E , S i n g

l e P u l s e A v a l a n c h e E n e r g y (m J )

A S Starting T , Junction Temperature (°C)

IRLR/U2703PbF

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Fig 14. For N-Channel HEXFETS

* V GS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

V DD

I-Pak (TO-251AA) Package Outline Dimensions

IRLR/U2703PbF

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Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

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D-Pak (TO-252AA) T ape & Reel Information

Dimensions are shown in millimeters (inches)

TR

16.3 ( .641 )15.7 ( .619 )8.1 ( .318 )7.9 ( .312 )

12.1 ( .476 )11.9 ( .469 )

FEED DIRECTION

FEED DIRECTION

16.3 ( .641 )15.7 ( .619 )

TRR

TRL

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

分销商库存信息:

IR

IRLR2703TRPBF IRLU2703PBF IRLR2703TRLPBF IRLR2703PBF

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