STP140NF75中文资料

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AUTOMOTIVE SPECIFIC

December 2002STB140NF75 STP140NF75

STB140NF75-1

N-CHANNEL 75V - 0.0065 ? -120A D2PAK/I2PAK/TO-220

STripFET? II POWER MOSFET

s TYPICAL R DS (on) = 0.0065 ?

SURFACE-MOUNTING D 2PAK (TO-263) POWER PACKAGE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size?"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS

s AUTOMOTIVE 42V BATTERY DRIVERS

TYPE V DSS R DS(on)I D STB140NF75STP140NF75STB140NF75-1

75 V 75 V 75 V

<0.0075 ?<0.0075 ?<0.0075 ?

120 A (**)120 A (**)120 A (**)

Ordering Information

ABSOLUTE MAXIMUM RATINGS

Pulse width limited by safe operating area.

(**) Current Limited by Package

(1) I SD ≤120A, di/dt ≤400A/μs, V DD ≤ V (BR)DSS , T j ≤ T JMAX (2) Starting T j = 25 o C, I D = 60 A, V DD = 30V

SALES TYPE

MARKING PACKAGE PACKAGING STB140NF75T4B140NF75D 2PAK TAPE & REEL

STP140NF75P140NF75TO-220TUBE STB140NF75-1

B140NF75

I 2PAK

TUBE

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0)

75V V DGR

Drain-gate Voltage (R GS = 20 k ?)75V V GS Gate- source Voltage

± 20V I D (**)

Drain Current (continuous) at T C = 25°C 120A I D

Drain Current (continuous) at T C = 100°C 100A I DM (?)Drain Current (pulsed)480A P tot Total Dissipation at T C = 25°C

310W Derating Factor

2.08W/°C dv/dt (1)Peak Diode Recovery voltage slope 10V/ns E AS (2)Single Pulse Avalanche Energy 750mJ T stg Storage Temperature -55 to 175

°C

T j Operating Junction Temperature

STB140NF75 STP140NF75 STB150NF75-1

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFF

ON (*)

DYNAMIC

Rthj-case Thermal Resistance Junction-case Max 0.48°C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5

°C/W Rthj-pcb Thermal Resistance Junction-pcb

Max

see curve on page 6

°C/W T l

Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case)

300

°C

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D = 250 μA

V GS = 0

V I DSS

Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

V DS = Max Rating T C = 125°C 110μA μA I GSS

Gate-body Leakage Current (V DS = 0)

V GS = ± 20 V

±100

Symbol Parameter

Test Conditions

Min.Typ.

Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 μA 2

4V R DS(on)

Static Drain-source On Resistance

V GS = 10 V

I D = 70 A

0.00650.0075

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (*)Forward Transconductance V DS = 15 V

I D =70 A

160S C iss C oss C rss

Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25V, f = 1 MHz, V GS = 0

5000960310

pF pF pF

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STB140NF75 STP140NF75 STB150NF75-1

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(?)Pulse width limited by safe operating area.

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise Time

V DD = 38 V

I D = 70 A R G =4.7 ? V GS = 10 V (Resistive Load, Figure 3)30140ns ns

Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD =60 V I D =120A V

GS = 10V

(see test circuit, Figure 4)

1602870

218

nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f

Turn-off Delay Time Fall Time

V DD = 38 V

I D = 70 A R G =4.7?, V GS = 10 V (Resistive Load, Figure 3)

13090

ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (?)Source-drain Current

Source-drain Current (pulsed)120480A A V SD (*)Forward On Voltage I SD = 120 A

V GS = 0

1.5

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD = 120 A

di/dt = 100A/μs V DD = 35 V T j = 150°C (see test circuit, Figure 5)

1154508

ns nC A

ELECTRICAL CHARACTERISTICS (continued)

STB140NF75 STP140NF75 STB150NF75-1

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Allowable Iav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,under the following conditions:P D(AVE) = 0.5 * (1.3 * BV DSS * I AV )E AS(AR) = P D(AVE) * t AV

Where:

I AV is the Allowable Current in Avalanche

P D(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)t AV is the Time in Avalanche

To derate above 25 o C, at fixed I AV , the following equation must be applied:

I AV = 2 * (T jmax - T CASE )/ (1.3 * BV DSS * Z th )

Where:

Z th = K * R th is the value coming from Normalized Thermal Response at fixed pulse width equal to T AV .

STB140NF75 STP140NF75 STB150NF75-1

Parameter Node Value CTHERM17 - 6 1.49 * 10-3 CTHERM2 6 - 5 3.50 * 10-2 CTHERM3 5 - 4 5.94 * 10-2 CTHERM4 4 - 39.74 * 10-2 CTHERM5 3 - 28.86 * 10-2 CTHERM6 2 - 18.27 * 10-1

RTHERM17 - 60.0384 RTHERM2 6 - 50.0624 RTHERM3 5 - 40.072 RTHERM4 4 - 30.0912 RTHERM5 3 - 20.1008 RTHERM6 2 - 1

0.1152

SPICE THERMAL MODEL

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STB140NF75 STP140NF75 STB150NF75-1

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Fig. 3: Switching Times Test Circuits For Resistive Fig. 3.1: Switching Time Waveform

STB140NF75 STP140NF75 STB150NF75-1 Fig. 5: Diode Switching Test Circuit

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STB140NF75 STP140NF75 STB150NF75-1

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DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181A1 2.49 2.690.0980.106

A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.95

9.35

0.352

0.368

D18

0.315

E 10

10.4

0.394

0.409

E18.5

0.334

G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.4

3.2

0.094

0.126

R 0.4

0.015

0°8°

0°

8°

D 2PAK MECHANICAL DATA

STB140NF75 STP140NF75 STB150NF75-1

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DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H210

10.40

0.393

0.409

L216.400.645L328.90

1.137

L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA

3.75

3.85

0.147

0.151

TO-220 MECHANICAL DATA

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STB140NF75 STP140NF75 STB150NF75-1

DIM.

mm inch

MIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.1

00750.082

R 50 1.574T 0.250.35.0.00980.0137W

23.7

24.30.933

0.956DIM.mm inch

MIN.

MAX.MIN.

MAX.A 330

12.992

B 1.50.059

C 12.813.20.5040.520

D 20.20.795G 24.426.40.960 1.039N 100

3.937

30.4

1.197BASE QTY BULK QTY 1000

1000REEL MECHANICAL DATA

* on sales type

TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

D 2PAK FOOTPRINT TAP

E MECHANICAL DATA

STB140NF75 STP140NF75 STB150NF75-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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