MAC223A8中文资料

MAC223A6, MAC223A8, MAC223A10

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies; or

voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

TRIACS

25 AMPERES RMS

400 thru 800 VOLTS

Device Package Shipping

ORDERING INFORMATION

MAC223A6TO220AB500/Box MAC223A8TO220AB

MAC223A10TO220AB

TO?220AB

CASE 221A

STYLE 4

PIN ASSIGNMENT

3Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

https://www.360docs.net/doc/c71910731.html,

500/Box

MT1

MT2

Preferred devices are recommended choices for future use and best overall value.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.2°C/W Thermal Resistance, Junction to Ambient RθJA60°C/W Maximum Lead T emperature for Soldering Purposes 1/8″ from Case for 10 Seconds T L260°C

ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise indicated; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS

Peak Repetitive Blocking Current T J = 25°C (V D = Rated V DRM,V RRM;Gate Open)T J = 125°C I DRM,

I RRM

—

2.0

μA

ON CHARACTERISTICS

Peak On?State Voltage (I TM = "35 A Peak, Pulse Width v2 ms,

Duty Cycle v2%)

V TM— 1.4 1.85Volts

Gate Trigger Current (Continuous dc)

(V D = 12 V, R L = 100 Ω)

MT2(+), G(+); MT2(?), G(?); MT(+), G(?) MT2(?), G(+)I GT

—

Gate Trigger Voltage (Continuous dc)

(V D = 12 V, R L = 100 Ω)

MT2(+), G(+); MT2(?), G(?); MT(+), G(?) MT2(?), G(+)V GT

—

1.1

1.3

2.0

2.5

Volts

Gate Non?trigger Voltage

(V D = 12 V, T J = 125°C, R L = 100 Ω) All Quadrants V GD

0.20.4—

Volts

Holding Current

(V D = 12 Vdc, Gate Open, Initiating Current = "200 mA)

I H—1050mA

Turn?On Time

(V D = Rated V DRM, I TM = 35 A Peak, I G = 200 mA)

t gt— 1.5—μs DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage

(V D = Rated V DRM, Exponential Waveform, T C = 125°C)

dv/dt—40—V/μs

Critical Rate of Rise of Commutation Voltage

(V D = Rated V DRM, I TM = 35 A Peak, Commutating

di/dt = 12.6 A/ms, Gate Unenergized, T C = 80°C)

dv/dt(c)— 5.0—V/μs

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

All polarities are referenced to MT1.

With in?phase signals (using standard AC lines) quadrants I and III are used.

T , M A X I M U M A L L O W A B L E C A S E T E M P E R A T U R E ( C )

C °

N O R M A L I Z E D G A T E C U R R E N T

T J , JUNCTION TEMPERATURE (°C)V TM , INSTANTANEOUS ON?STATE VOLTAGE (VOLTS)

i N O R M A L I Z E D H O L D C U R R E N T

Figure 5. Typical Hold Current Figure 6. Typical On ?State Characteristics

PACKAGE DIMENSIONS

TO?220AB

CASE 221A?07

ISSUE Z

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PUBLICATION ORDERING INFORMATION