M8550贴片三极管规格书

三极管的封装及引脚识别

三极管的封装及引脚识别 三极管的封装形式是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。

图1 晶体管的外形及尺寸 1 封装 1.金属封装 （1）B型：B型分为B－1、B－2、…、B－6共6种规格，主要用于1W及1W以下的高频小功率晶体管，其中B－1、B－3型最为常用。引脚排列：管底面对自己，由管键起，按顺时针方向依次为E、B、C、D（接地极）。其封装外形如图2（a）所示。 （2）C型：引脚排列与B型相同，主要用于小功率。其封装外形如图2（b）所示。 （3）D型：外形结构与B型相同。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（c）所示。 （4）E型：引脚排列与D型相同，封装外形如图3（d）所示。 （5）F型：该型分为F－0、F－1～F－4共5种规格，各规格外形相同而尺寸不同，主要用于低频大功率管封装，使用最多的是F－2型封装。引脚排列：管底面对自己，小等腰三角形的庵面朝下，左为E，右为B，两固定孔为C。其封装外形如图2（e）所示。¨ （6）G型：分为G－1～G－6共6种规格，主要用于低频大功率晶体管封装，使用最多的是G－3、G－4型。其中G－1、G－2为圆形引出线，G－3～G－6为扁形引出线。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（f）所示。 2.塑料封装 （1）S－1型、S－2型、S－4型：用于封装小功率三极管，其中以S－1型应用最为普遍。S－1、S－2、S－3型管的封装外形如图2（g）、（h）、（i）所示。引脚排列：平面朝外，半圆形朝内，引脚朝上时从左到右为E、B、C。 （2）S－5型：主要用于大功率三极管。引脚排列：平面朝外，半圆形朝内，引脚朝上时从左到右为E、B、C。S－5型的封装外形如图2（j）所示。 （3）S－6lA、S－6B、S－7、S－8型：主要用于大功率三极管，其中以S－7型最为常用。S－6A 引脚排列：切角面面对自己，引脚朝下，从左到右依次为B、C、E。它们的引脚排列与外形分别如图5.12（k）、（l）、（m）、（n）所示。 （4）常见进口管的外形封装结构：TO－92与部标S－1相似，TO－92L与部标S－4相似，TO126与S－5相似，TO-202与部标S－7相似。

2SC4617贴片三极管 SOT-523三极管封装2SC4617参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4617 TRANSISTOR (NPN) FEATURES z Low Cob:Cob=2.0pF(Typ) z Complement to 2SA1774 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdown voltage V (BR)CBO I C =50uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50uA, I C =0 7 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA DC current gain h FE V CE =6V, I C = 1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.4 V Transition frequency f T V CE =12V, I C =2mA, f=100MHz 180 MHz Collector output capacitance C ob V CB =12V, I E =0, f=1MHz 3.5 pF CLASSIFICATION OF h FE Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS A,May,2011

三极管的封装形式

三极管的封装形式 是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。

图1 晶体管的外形及尺寸 1 封装 1.金属封装 （1）B型：B型分为B－1、B－2、…、B－6共6种规格，主要用于1W及1W以下的高频小功率晶体管，其中B－1、B－3型最为常用。引脚排列：管底面对自己，由管键起，按顺时针方向依次为E、B、C、D（接地极）。其封装外形如图2（a）所示。 （2）C型：引脚排列与B型相同，主要用于小功率。其封装外形如图2（b）所示。 （3）D型：外形结构与B型相同。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（c）所示。 （4）E型：引脚排列与D型相同，封装外形如图3（d）所示。 （5）F型：该型分为F－0、F－1～F－4共5种规格，各规格外形相同而尺寸不同，主要用于低频大功率管封装，使用最多的是F－2型封装。引脚排列：管底面对自己，小等腰三角形的庵面朝下，左为E，右为B，两固定孔为C。其封装外形如图2（e）所示。¨ （6）G型：分为G－1～G－6共6种规格，主要用于低频大功率晶体管封装，使用最多的是G－3、G－4型。其中G－1、G－2为圆形引出线，G－3～G－6为扁形引出线。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（f）所示。 2.塑料封装

常见大中功率管三极管参数(精)

常见大中功率管三极管参数 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1402 1500V 5A 120W * * NPN 2SD1399 1500V 6A 60W * * NPN 2SD1344 1500V 6A 50W * * NPN 2SD1343 1500V 6A 50W * * NPN 2SD1342 1500V 5A 50W * * NPN 2SD1941 1500V 6A 50W * * NPN 2SD1911 1500V 5A 50W * * NPN 2SD1341 1500V 5A 50W * * NPN 2SD1219 1500V 3A 65W * * NPN 2SD1290 1500V 3A 50W * * NPN 2SD1175 1500V 5A 100W * * NPN 2SD1174 1500V 5A 85W * * NPN 2SD1173 1500V 5A 70W * * NPN 2SD1172 1500V 5A 65W * * NPN 2SD1143 1500V 5A 65W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1142 1500V 3.5A 50W * * NPN 2SD1016 1500V 7A 50W * * NPN 2SD995 2500V 3A 50W * * NPN 2SD994 1500V 8A 50W * * NPN 2SD957A 1500V 6A 50W * * NPN 2SD954 1500V 5A 95W * * NPN 2SD952 1500V 3A 70W * * NPN 2SD904 1500V 7A 60W * * NPN 2SD903 1500V 7A 50W * * NPN 2SD871 1500V 6A 50W * * NPN 2SD870 1500V 5A 50W * * NPN 2SD869 1500V 3.5A 50W * * NPN 2SD838 2500V 3A 50W * * NPN 2SD822 1500V 7A 50W * * NPN 2SD821 1500V 6A 50W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD348 1500V 7A 50W * * NPN 2SC4303A 1500V 6A 80W * * NPN 2SC4292 1500V 6A 100W * * NPN 2SC4291 1500V 5A 100W * * NPN 2SC4199A 1500V 10A 100W * * NPN 2SC3883 1500V 5A 50W * * NPN 2SC3729 1500V 5A 50W * * NPN 2SC3688 1500V 10A 150W * * NPN

常见贴片二、三极管的封装

www.mccsemi .com PACKAGE OUTLINES Note: Drawings Are Not To Scale C DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .166 ----- 4.20 B ----- .079 ----- 2.00 ? C ----- .020 ----- 0.52 ? D 1.000 --- 25.40 --- DO-35 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .028 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-41 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .021 .025 .53 .64 ? D 1.000 --- 25.40 --- A-405 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .230 .300 5.80 7.60 B .104 .140 2.60 3.60 ? C .026 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-15 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .300 ----- 7.62 B ----- .107 ----- 2.72 ? C .018 .022 0.46 0.56 ? D 1.000 --- 25.40 --- DO-7 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .370 ----- 9.50 B ----- .250 ----- 6.40 ? C .048 .052 1.20 1.30 ? D 1.000 --- 25.40 --- DO-201AD

MMBT2907AT贴片三极管 SOT-523三极管封装MMBT2907AT参数

A,Jan,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES z Complementary to NPN Type (MMBT2222AT) z Small Package MARKING:2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Emitter cut-off current I EBO V EB =-5V, I C =0 -10 nA h FE(1) V CE =-10V, I C =-0.1mA 75 h FE(2) V CE =-10V, I C =-1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C =-150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -1.6 V I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -2.6 V Transition frequency f T V CE =-20V,I C =-50mA, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8 pF Emitter input capacitance C ib V EB =-2V, I C =0, f=1MHz 30 pF Delay time t d 10 ns Rise time t r V CC =-30V, I C =-150mA, I B1=-15mA 40 ns Storage time t s 225 ns Fall time t f V CC =-6V, I C =-150mA, I B1=I B2=-15mA 30 ns Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ 3. COLLECTOR

大功率三极管参数..

大功率三极管参数 MJ15024 | NPN | 250V | 16A | 250 W MJ15025 | PNP | 250V | 16A |250 W E13005-2是“高速/高压开关管” 参数：硅、NPN、700V/400V 、8A 、75W 、β≥10 三极管参数大全 BU2525AF NPN 30 开关功放1500V12A150W /350NS BU2525AX NPN 30 开关功放1500V12A150W /350NS BU2527AF NPN 30 开关功放1500V15A150W BU2532AW NPN 30 开关功放1500V15A150W(大屏) BUH515 NPN BCE 行管1500V10A80W BUH515D NPN BCE 行管1500V10A80W(带阻尼) BUS13A NPN 12 开关功放1000V15A175W BUS14A NPN 12 开关功放1000V30A250W BUT11A NPN 28 开关功放1000V5A100W BUT12A NPN 28 开关功放450V10A125W BUV26 NPN 28 音频功放开关90V14A65W /250ns BUV28A NPN 28 音频功放开关225V10A65W /250ns BUV48A NPN 30 音频功放开关450V15A150W BUW13A NPN 30 功放开关1000V15A150W BUX48 NPN 12 功放开关850V15A125W BUX84 NPN 30 功放开关800V2A40W BUX98A NPN 12 功放开关400V30A210W5MHZ DTA114 PNP 10K-10K 160V0.6A0.625W(带阻) DTC143 NPN 录像机用4.7K-4.7K HPA100 NPN BCE 大屏彩显行管21# HPA150 NPN BCE 大屏彩显行管21# HSE830 PNP BCE 音频功放80V115W1MHZ HSE838 NPN BCE 音频功放80V115W1MHZ COP/MJ4502 MN650 NPN BCE 行管1500V6A80W MJ802 NPN 12 音频功放开关90V30A200W MJ2955 PNP 12 音频功放开关60V15A115W MJ3055 NPN 12 音频功放开关60V15A115W MJ4502 PNP 12 音频功放开关90V30A200W COP/MJ802 MJ10012 NPN 12 达林顿400V10A175W MJ10015 NPN 12 电源开关400V50A200W

贴片三极管封装形式

贴片三极管封装 1A SOT323 BC846AW NPN 1A SOT416 BC846AT N BC546A 1A SOT89 PXT3904 NPN 1A SOT89 SXT3904 NPN -1A SOT323 PMST3904 N 2N3904 1A- SOT323 BC846AW N BC546A 1AM SOT23 MMBT3904L N 2N3904 1Ap SOT23 BC846A N BC546A 1At SOT23 BC846A N BC546A 1At SOT323 BC846AW N BC546A 1B SOT23 BC846B NPN 1B SOT23 BC846B N BC546B 1B SOT23 FMMT2222 NPN 1B SOT23 FMMT2222 N 2N2222 1B SOT23 IRLML2803 F n-ch mosfet 30V 0.9A 1B SOT23 MMBT2222 NPN 1B SOT23 MMBT2222 N 2N2222 1B SOT23 PMBT2222 NPN 1B SOT23 SMBT2222 NPN 1B SOT23 YTS2222 NPN 1B SOT323 BC846BW NPN 1B SOT416 BC846BT N BC546B 1B SOT89 PXT2222 NPN -1B SOT323 PMST2222 N 2N2222 1B- SOT323 >BC846BW N BC546B

1Bs SC74 BC817UPN N 1Bt SOT23 BC846B N BC546B 1Bt SOT323 BC846BW N BC546B 1C SOT23 FMMT-A20 NPN 1C SOT23 FMMT-A20 N MPSA20 1C SOT23 IRLML6302 F p-ch mosfet 20V 0.6A 1C SOT23 MMBTA20 NPN 1C SOT23 MMBTA20L N MPS3904 1C SOT23 SMBTA20 NPN 1Cp SOT23 BAP50-05 B dual cc GP RF pin diode 1Cs SOT363 BC847S BC457 1D SOT23 BC846 NPN 1D SOT23 IRLML5103 F p-ch mosfet 30V 0.6A 1D SOT23 MMBTA42 NPN 1D SOT23 MMBTA42 N MPSA42 300V npn 1D SOT23 SMBTA42 NPN 1D SOT323 BC846W NPN 1D SOT89 SXTA42 NPN 1D- SOT323 BC846W N BC456 1DN 2SC4083 N npn 11V 3.2GHz TV tuners 1Dp SOT23 BC846 N BC456 1DR SC59 MSD1328-RT1 NPN 1DR SOT346 MSD1328R N npn gp 25V 500mA 1Ds SC74 BC846U N BC456 1Ds SOT363 BC846U BC456 1Dt SOT23 BC846 N BC456 1Dt SOT323 BC846W N BC456 1E FMMT-A43 N MPSA43 1E SOT23 BC847A NPN 1E SOT23 BC847A N BC547A 1E SOT23 FMMT-A43 NPN 1E SOT23 MMBTA43 NPN 1E SOT23 MMBTA43 N MPSA43 200V npn 1E SOT23 SMBTA43 NPN 1E SOT323 BC847AW NPN 1E SOT416 BC847AT N BC547A 1E SOT89 SXTA43 NPN 1E- SOT323 BC847A N BC547A 1EN 2SC4084 N npn 20V 2.0GHz TV tuners 1Ep SOT23 BC847A N BC547A 1ER SOT23R BC847AR R BC547A 1Es SOT23 BC847A N BC457 1Es SOT323 BC847AW N BC457

MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数

A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4403 TRANSISTOR (PNP) FEATURES ● Complementary To MMST4401 ● Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance From Junction To Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0 -500 nA V CE =-1V, I C =-100μA 30 V CE =-1V, I C =-1mA 60 V CE =-1V, I C =-10mA 100 V CE =-2V, I C =-150mA 100 300 DC current gain h FE V CE =-2V, I C =-500mA 20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequency f T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF https://www.360docs.net/doc/c34501343.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

3904 3906三极管说明

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors NST3946 General purpose transistors (dual transistors) DESCRIPTION It is designed for general purpose amplifier applications . By putting two mount applications where board space is at a premium. z Low V CE(sat) z Simplifies Circuit Design z Reduces Board Space z Reduces Component Count Marking: 46 Equivalent circuit 1

CBO V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -200 mA P C Collector Power Dissipation 150 mW R θJA Thermal Resistance from Junction to Ambient 833 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C = 0 -5 V Collector cut-off current I CBO V CB =-30V, I E = 0 -0.05 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.05μA V CE =-1V, I C = -0.1mA 60 V CE =-1V, I C = -1mA 80 V CE =-1V, I C = -10mA 100 300 V CE =-1V, I C = -50mA 60 DC current gain h FE V CE =-1V, I C = -100mA 30 I C =-10mA, I B =-1mA -0.25V Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.4 V I C =-10mA, I B =-1mA -0.65 -0.85 V Base-emitter saturation voltage V BE(sat) I C =-50mA, I B =-5mA -0.95V Transition frequency f T V CE =-20V, I C =-10mA, f=100MHz 250 MHz Output capacitance C ob V CB =-5V, I E =0, f=1MHz 4.5 pF

DSK32 SOD-123FL系列规格书推荐

DSK32 THRU DSK310SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -3.0 Ampere 1of 2

RATINGS AND CHARACTERISTIC CURVES DSK32 THRU DSK310 FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD FIG. 1- FORWARD CURRENT DERATING CURVE A V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E S I N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E S P E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E S INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 10 1 0.1 0.010.001 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS I N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L I A M P E R E S AMBIENT TEMPERATURE, C 2of 2

A44贴片三极管 SOT-89三极管封装A44参数

C ,Jun ,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage MARKING: A44 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 400 V Collector-emitter breakdown voltage V (BR)CEO *I C =1mA,I B = 0 400 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =400V,I E = 0 0.1 μA Emitter cut-off current I EBO V EB =4V,I C =0 0.1 μA h FE(1)* V CE =10V, I C = 1mA 40 h FE(2)* V CE =10V, I C =10mA 50 200 h FE(3)* V CE =10V, I C =50mA 45 DC current gain h FE(4)* V CE =10V, I C =100mA 40 I C =1mA,I B =0.1mA 0.4 V I C =10mA,I B =1mA 0.5 V Collector-emitter saturation voltage V CE(sat)* I C =50mA,I B =5mA 0.75 V Base-emitter saturation voltage V BE(sat)* I C =10mA,I B =1mA 0.75 V Collector output capacitance C ob V CB =20V, I E =0, f=1MHz 7 pF Emitter input capacitance C ib V BE =0.5V, I C =0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%. I C Collector Current -Continuous 200mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance f rom Junction t o Ambient 250℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ I CM Collector Current -Pulsed 300 mA https://www.360docs.net/doc/c34501343.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

常用贴片三极管主要参数及丝印

常用贴片三极管主要参数(SOT-23) 序号型号 TYPE 极性 POLA RITY P D (mW) I C (mA) BV CBO (V) BV CEO (V) h FE V CE(sat)I C/I B f TYPE (MHZ) 打标 Marking Min/Max I C mA V CE Volts Max Volts mA 1S9012PNP3005004025120/3505010.6500501502T1 2S9013NPN3005004025120/3505010.650050150J3 3S9014NPN2001005045200/1000150.31005150J6 4S9015PNP2001005045200/1000150.310010150M6 5S9018NPN20050251870/190 1.O50.51001600J8 6S8050NPN3005004025120/3505010.650050150J3Y 7S8550PNP3005004025120/3505010.6500501502TY 8SS8050NPN1001500402585/30010010.58008080Y1 9SS8550PNP1001500402585/30010010.58008080Y2 10C1815NPN20015060500130/400260.251001080HF 11A1015PNP2001505050130/400260.31001080BA 12C945NPN2001506050130/400160.310010150CR 13A733PNP2001506050120/475160.31001050CS 142SC1623NPN200100605090/600160.310010250L4、L5、L6、L7 15M28S NPN20010004020300/1000010010.556002010028S 16M8050NPN2001000402580/30010010.580080150Y11 17M8550PNP2001000402585/30010010.580080150Y21 18MMBT5551NPN30060018016080/25010 5.O0.550 5.O80G1 19MMBT5401PNP300600160150100/20010 5.O0.5500.51002L 20MMBTA42NPN300300300300100/20010100.2202501D 21MMBTA92NPN300300300300100/20010100.2202502D 222SC2412NPN2001506050120/560160.4505180BQ、BR、BS 232SC3356NPN300100201250/30020100.51057000R23、R24、R25 242SC3837NPN30050301856/39010100.52041500CN、CP、CQ、CR 252SC3838NPN30050201156/3905100.51053200AN、AP、AQ、AR 26BC807-16PNP2255005045100/25010010.7500502005A 27BC807-25PNP2255005045160/40010010.7500502005B 28BC807-40PNP2255005045250/60010010.7500502005C 29BC817-16NPN2255005045100/25010010.7500502006A 30BC817-25NPN2255005045160/40010010.7500502006B 31BC817-40NPN2255005045250/60010010.7500502006C 32BC846A NPN2251008065110/220250.610051001A 33BC846B NPN2251008065200/450250.610051001B 34BC847A NPN2251005045110/220250.610051001E 35BC847B NPN2251005045200/450250.610051001F 36BC847C NPN2251005045420/800250.610051001G 37BC848A NPN2251003030110/220250.610051001J 38BC848B NPN2251003030200/450250.610051001K 39BC848C NPN2251003030450/800250.610051001L 40BC858A PNP2251008065125/250250.6510051003A 41BC858B PNP2251008065220/475250.6510051003B 42BC857A PNP2251005045125/250250.6510051003E 43BC857B PNP2251005045220/475250.6510051003F 44BC875C PNP2251005045420/800250.6510051003G

S9018三极管参数 TO-92三极管S9018规格书

3.COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) FEATURES z High Current Gain Bandwidth Product MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E = 0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 18 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 4 V Collector cut-off current I CBO V CB =20V,I E = 0 0.1 nA Collector cut-off current I CEO V CE =15V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =1mA 28 270 Collector-emitter saturation voltage V CE(sat) I C =10mA,I B =1mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =10mA,I B =1mA 1.42V Transition frequency f T V CE =5V,I C =50mA,f=400MHz 800 MHz CLASSIFICATION OF h FE RANK D E F G H I J RANGE 28-45 39-60 54-80 72-108 97-146 132-198 180-270 Symbol Parameter Value Unit V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 18 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 50 mA P C Collector Power Dissipation 0.4 W R θJA Thermal Resistance From Junction To Ambient 312.5 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150℃ A,Jun,2011 https://www.360docs.net/doc/c34501343.html, 【南京南山半导体有限公司 — 长电三极管选型资料】