2SB1386贴片三极管 SOT-89封装三极管2SB1386参数

2SB1386贴片三极管 SOT-89封装三极管2SB1386参数
2SB1386贴片三极管 SOT-89封装三极管2SB1386参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1386 TRANSISTOR (PNP)

FEATURES z Low collector saturation voltage z Execllent current-to-gain characteristics MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

-30 V ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter

Symbol Test conditions M in T yp M ax U nit Collector-base breakdown voltage

V (BR)CBO I C =-50μA,I E 0 -30 V Collector-emitter breakdown voltage

V (BR)CEO I C =-1mA,I B =

0 -20 V Emitter-base breakdown voltage

V (BR)EBO I E =-50μA,I C =

0 -6 V Collector cut-off current

I CBO V CB =-20V,I E =0 -0.5 μA Emitter cut-off current

I EBO V EB =-5V,I C =0 -0.5 μA DC current gain

h FE V CE =-2V,I C =-500mA 82 390 Collector-emitter saturation voltage

V CE(sat) I C =-4A,I B =-100mA -1 V Transition frequency

f T V CE =-6V,I C =-50mA,f =30MHz 120 MHz Collector output capacitance C ob V CB =-20V,I E =0,f =1MHz 60 pF

CLASSIFIC A TION OF h FE

Rank

P Q R Range

82-180 120-270 180-390 Marking

BHP BHQ BHR

SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER B,Dec ,2011

*Single pulse,P W =10ms

https://www.360docs.net/doc/c75595764.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

0255075100125150

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0.2

0.40.60.8

1.0

-0.0

-0.2

-0.4-0.6

-0.8-1E-3

-0.01-0.1-1-0.0

-0.3

-0.6-0.9-1.2-1.5

2SB1386

Typical Characterisitics C O L

L E C T O

R P O W E R D I S S I P A T I O N

P c

(W )

AMBIENT TEMPERATURE Ta ()℃I C h FE —— C

O L L E C T O R -E M I T T E R S A T U R A T I O N V

O L

T

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V C E

s

a

t

(V )

-5C

O L L C E T O R C U R R E N T I C

(A ) Static Characteristic

C O L L E C T O R C U R R E N T I C

(A )B,Dec ,2011

Label on the Inner Box Label on the Outer Box

QA Label

Seal the box

with the tape

Seal the box

with the tape

Stamp “EMPTY”

on the empty box

Inner Box: 210 mm× 208mm×203 m m Outer Box: 440 mm× 440mm× 230mm

The top gasket

1000×1 PCS

Label on the Reel

The bottom gasket

The file folder

Plastic bag

三极管的封装及引脚识别

三极管的封装及引脚识别 三极管的封装形式是指三极管的外形参数,也就是安装半导体三极管用的外壳。材料方面,三极管的封装形式主要有金属、陶瓷和塑料形式;结构方面,三极管的封装为TO×××,×××表示三极管的外形;装配方式有通孔插装(通孔式)、表面安装(贴片式)和直接安装;引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO-92、TO-126、TO-3、TO-220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格,其外形结构和规格分别用字母和数字表示,如TO-162、TO-92等。晶体管的外形及尺寸如图1所示。

图1 晶体管的外形及尺寸 1 封装 1.金属封装 (1)B型:B型分为B-1、B-2、…、B-6共6种规格,主要用于1W及1W以下的高频小功率晶体管,其中B-1、B-3型最为常用。引脚排列:管底面对自己,由管键起,按顺时针方向依次为E、B、C、D(接地极)。其封装外形如图2(a)所示。 (2)C型:引脚排列与B型相同,主要用于小功率。其封装外形如图2(b)所示。 (3)D型:外形结构与B型相同。引脚排列:管底面对自己,等腰三角形的底面朝下,按顺时针方向依次为E、B、C。其封装外形如图2(c)所示。 (4)E型:引脚排列与D型相同,封装外形如图3(d)所示。 (5)F型:该型分为F-0、F-1~F-4共5种规格,各规格外形相同而尺寸不同,主要用于低频大功率管封装,使用最多的是F-2型封装。引脚排列:管底面对自己,小等腰三角形的庵面朝下,左为E,右为B,两固定孔为C。其封装外形如图2(e)所示。¨ (6)G型:分为G-1~G-6共6种规格,主要用于低频大功率晶体管封装,使用最多的是G-3、G-4型。其中G-1、G-2为圆形引出线,G-3~G-6为扁形引出线。引脚排列:管底面对自己,等腰三角形的底面朝下,按顺时针方向依次为E、B、C。其封装外形如图2(f)所示。 2.塑料封装 (1)S-1型、S-2型、S-4型:用于封装小功率三极管,其中以S-1型应用最为普遍。S-1、S-2、S-3型管的封装外形如图2(g)、(h)、(i)所示。引脚排列:平面朝外,半圆形朝内,引脚朝上时从左到右为E、B、C。 (2)S-5型:主要用于大功率三极管。引脚排列:平面朝外,半圆形朝内,引脚朝上时从左到右为E、B、C。S-5型的封装外形如图2(j)所示。 (3)S-6lA、S-6B、S-7、S-8型:主要用于大功率三极管,其中以S-7型最为常用。S-6A 引脚排列:切角面面对自己,引脚朝下,从左到右依次为B、C、E。它们的引脚排列与外形分别如图5.12(k)、(l)、(m)、(n)所示。 (4)常见进口管的外形封装结构:TO-92与部标S-1相似,TO-92L与部标S-4相似,TO126与S-5相似,TO-202与部标S-7相似。

2SC4617贴片三极管 SOT-523三极管封装2SC4617参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4617 TRANSISTOR (NPN) FEATURES z Low Cob:Cob=2.0pF(Typ) z Complement to 2SA1774 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdown voltage V (BR)CBO I C =50uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50uA, I C =0 7 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA DC current gain h FE V CE =6V, I C = 1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.4 V Transition frequency f T V CE =12V, I C =2mA, f=100MHz 180 MHz Collector output capacitance C ob V CB =12V, I E =0, f=1MHz 3.5 pF CLASSIFICATION OF h FE Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS A,May,2011

三极管的封装形式

三极管的封装形式 是指三极管的外形参数,也就是安装半导体三极管用的外壳。材料方面,三极管的封装形式主要有金属、陶瓷和塑料形式;结构方面,三极管的封装为TO×××,×××表示三极管的外形;装配方式有通孔插装(通孔式)、表面安装(贴片式)和直接安装;引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO-92、TO-126、TO-3、TO-220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格,其外形结构和规格分别用字母和数字表示,如TO-162、TO-92等。晶体管的外形及尺寸如图1所示。

图1 晶体管的外形及尺寸 1 封装 1.金属封装 (1)B型:B型分为B-1、B-2、…、B-6共6种规格,主要用于1W及1W以下的高频小功率晶体管,其中B-1、B-3型最为常用。引脚排列:管底面对自己,由管键起,按顺时针方向依次为E、B、C、D(接地极)。其封装外形如图2(a)所示。 (2)C型:引脚排列与B型相同,主要用于小功率。其封装外形如图2(b)所示。 (3)D型:外形结构与B型相同。引脚排列:管底面对自己,等腰三角形的底面朝下,按顺时针方向依次为E、B、C。其封装外形如图2(c)所示。 (4)E型:引脚排列与D型相同,封装外形如图3(d)所示。 (5)F型:该型分为F-0、F-1~F-4共5种规格,各规格外形相同而尺寸不同,主要用于低频大功率管封装,使用最多的是F-2型封装。引脚排列:管底面对自己,小等腰三角形的庵面朝下,左为E,右为B,两固定孔为C。其封装外形如图2(e)所示。¨ (6)G型:分为G-1~G-6共6种规格,主要用于低频大功率晶体管封装,使用最多的是G-3、G-4型。其中G-1、G-2为圆形引出线,G-3~G-6为扁形引出线。引脚排列:管底面对自己,等腰三角形的底面朝下,按顺时针方向依次为E、B、C。其封装外形如图2(f)所示。 2.塑料封装

贴片三极管代码查找贴片,三极管资料及其封装

JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300

贴片三极管上的印字与真实型号对照手册

贴片三极管上的印字与真实名称的对照表 印字器件厂商类型封装器件用途及参数 -28 PDTA114WU Phi N SOT323 pnp dtr -24 PDTC114TU Phi N SOT323 npn dtr R1 10k -23 PDTA114TU Phi N SOT323 pnp dtr R1 10k -20 PDTC114WU Phi N SOT323 npn dtr -6 PMSS3906 Phi N SOT323 2N3906 -4 PMSS3904 Phi N SOT323 2N3904 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 1 2SC3587 Nec CX - npn RF fT10GHz 1 BA277 Phi I SOD523 VHF Tuner band switch diode 2 BST82 Phi M - n-ch mosfet 80V 175mA 2 MRF5711L Mot X SOT14 3 npn RF MRF571 2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain 2 BAT62-02W Sie I SCD80 BAT16 schottky diode 2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 3 BAT60A Sie I SOD323 10V 3A sw schottky 3 BAT62-02W Sie I SCD80 - 4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF521 4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17. 5 dBm 4 BB664 Sie I SCD80 Varicap 42-2.5pF 5 SSTPAD5 Sil J - PAD-5 5pA leakage diode 5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA 9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA

常见贴片二、三极管的封装

www.mccsemi .com PACKAGE OUTLINES Note: Drawings Are Not To Scale C DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .166 ----- 4.20 B ----- .079 ----- 2.00 ? C ----- .020 ----- 0.52 ? D 1.000 --- 25.40 --- DO-35 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .028 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-41 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .021 .025 .53 .64 ? D 1.000 --- 25.40 --- A-405 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .230 .300 5.80 7.60 B .104 .140 2.60 3.60 ? C .026 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-15 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .300 ----- 7.62 B ----- .107 ----- 2.72 ? C .018 .022 0.46 0.56 ? D 1.000 --- 25.40 --- DO-7 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .370 ----- 9.50 B ----- .250 ----- 6.40 ? C .048 .052 1.20 1.30 ? D 1.000 --- 25.40 --- DO-201AD

MMBT2907AT贴片三极管 SOT-523三极管封装MMBT2907AT参数

A,Jan,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES z Complementary to NPN Type (MMBT2222AT) z Small Package MARKING:2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Emitter cut-off current I EBO V EB =-5V, I C =0 -10 nA h FE(1) V CE =-10V, I C =-0.1mA 75 h FE(2) V CE =-10V, I C =-1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C =-150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -1.6 V I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -2.6 V Transition frequency f T V CE =-20V,I C =-50mA, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8 pF Emitter input capacitance C ib V EB =-2V, I C =0, f=1MHz 30 pF Delay time t d 10 ns Rise time t r V CC =-30V, I C =-150mA, I B1=-15mA 40 ns Storage time t s 225 ns Fall time t f V CC =-6V, I C =-150mA, I B1=I B2=-15mA 30 ns Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 3. COLLECTOR

贴片三极管封装形式

贴片三极管封装 1A SOT323 BC846AW NPN 1A SOT416 BC846AT N BC546A 1A SOT89 PXT3904 NPN 1A SOT89 SXT3904 NPN -1A SOT323 PMST3904 N 2N3904 1A- SOT323 BC846AW N BC546A 1AM SOT23 MMBT3904L N 2N3904 1Ap SOT23 BC846A N BC546A 1At SOT23 BC846A N BC546A 1At SOT323 BC846AW N BC546A 1B SOT23 BC846B NPN 1B SOT23 BC846B N BC546B 1B SOT23 FMMT2222 NPN 1B SOT23 FMMT2222 N 2N2222 1B SOT23 IRLML2803 F n-ch mosfet 30V 0.9A 1B SOT23 MMBT2222 NPN 1B SOT23 MMBT2222 N 2N2222 1B SOT23 PMBT2222 NPN 1B SOT23 SMBT2222 NPN 1B SOT23 YTS2222 NPN 1B SOT323 BC846BW NPN 1B SOT416 BC846BT N BC546B 1B SOT89 PXT2222 NPN -1B SOT323 PMST2222 N 2N2222 1B- SOT323 >BC846BW N BC546B

1Bs SC74 BC817UPN N 1Bt SOT23 BC846B N BC546B 1Bt SOT323 BC846BW N BC546B 1C SOT23 FMMT-A20 NPN 1C SOT23 FMMT-A20 N MPSA20 1C SOT23 IRLML6302 F p-ch mosfet 20V 0.6A 1C SOT23 MMBTA20 NPN 1C SOT23 MMBTA20L N MPS3904 1C SOT23 SMBTA20 NPN 1Cp SOT23 BAP50-05 B dual cc GP RF pin diode 1Cs SOT363 BC847S BC457 1D SOT23 BC846 NPN 1D SOT23 IRLML5103 F p-ch mosfet 30V 0.6A 1D SOT23 MMBTA42 NPN 1D SOT23 MMBTA42 N MPSA42 300V npn 1D SOT23 SMBTA42 NPN 1D SOT323 BC846W NPN 1D SOT89 SXTA42 NPN 1D- SOT323 BC846W N BC456 1DN 2SC4083 N npn 11V 3.2GHz TV tuners 1Dp SOT23 BC846 N BC456 1DR SC59 MSD1328-RT1 NPN 1DR SOT346 MSD1328R N npn gp 25V 500mA 1Ds SC74 BC846U N BC456 1Ds SOT363 BC846U BC456 1Dt SOT23 BC846 N BC456 1Dt SOT323 BC846W N BC456 1E FMMT-A43 N MPSA43 1E SOT23 BC847A NPN 1E SOT23 BC847A N BC547A 1E SOT23 FMMT-A43 NPN 1E SOT23 MMBTA43 NPN 1E SOT23 MMBTA43 N MPSA43 200V npn 1E SOT23 SMBTA43 NPN 1E SOT323 BC847AW NPN 1E SOT416 BC847AT N BC547A 1E SOT89 SXTA43 NPN 1E- SOT323 BC847A N BC547A 1EN 2SC4084 N npn 20V 2.0GHz TV tuners 1Ep SOT23 BC847A N BC547A 1ER SOT23R BC847AR R BC547A 1Es SOT23 BC847A N BC457 1Es SOT323 BC847AW N BC457

MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数

A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4403 TRANSISTOR (PNP) FEATURES ● Complementary To MMST4401 ● Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance From Junction To Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0 -500 nA V CE =-1V, I C =-100μA 30 V CE =-1V, I C =-1mA 60 V CE =-1V, I C =-10mA 100 V CE =-2V, I C =-150mA 100 300 DC current gain h FE V CE =-2V, I C =-500mA 20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequency f T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF https://www.360docs.net/doc/c75595764.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

A44贴片三极管 SOT-89三极管封装A44参数

C ,Jun ,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage MARKING: A44 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 400 V Collector-emitter breakdown voltage V (BR)CEO *I C =1mA,I B = 0 400 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =400V,I E = 0 0.1 μA Emitter cut-off current I EBO V EB =4V,I C =0 0.1 μA h FE(1)* V CE =10V, I C = 1mA 40 h FE(2)* V CE =10V, I C =10mA 50 200 h FE(3)* V CE =10V, I C =50mA 45 DC current gain h FE(4)* V CE =10V, I C =100mA 40 I C =1mA,I B =0.1mA 0.4 V I C =10mA,I B =1mA 0.5 V Collector-emitter saturation voltage V CE(sat)* I C =50mA,I B =5mA 0.75 V Base-emitter saturation voltage V BE(sat)* I C =10mA,I B =1mA 0.75 V Collector output capacitance C ob V CB =20V, I E =0, f=1MHz 7 pF Emitter input capacitance C ib V BE =0.5V, I C =0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%. I C Collector Current -Continuous 200mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance f rom Junction t o Ambient 250℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ I CM Collector Current -Pulsed 300 mA https://www.360docs.net/doc/c75595764.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

2SC2881贴片三极管 SOT-89封装三极管2SC2881参数

A,Nov,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E = 0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 120 V Emitter-base breakdown voltage V (BR)EBO I E =1mA,I C =0 5 V Collector cut-off current I CBO V CB =120V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =100mA 80 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1 V Base-emitter voltage V BE V CE =5V, I C =0.5A 1 V Transition frequency f T V CE =5V,I C =100mA 120 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 30 pF CLASSIFICATION OF h FE RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 120 V V EBO Emitter-Base Voltage 5 V I C Collector Current 800 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.360docs.net/doc/c75595764.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

常用贴片三极管与直插三极管型号对应

1.直插贴片型号对应 直插封装的型号贴片的型号9011 1t 9012 2t 9013 j3 9014 j6 9015 m6 9016 y6 9018 j8 s8050 j3y s8550 2ty 8050 y1 8550 y2 2sa1015 ba 2sc1815 hf 2sc945 cr mmbt3904 1am mmbt3906 2a mmbt2222 1p mmbt5401 2l mmbt5551 g1 mmbta42 1d mmbta92 2d bc807-16 5a bc807-25 5b bc807-40 5c bc817-16 6a bc817-25 6b bc817-40 6c bc846a 1a bc846b 1b bc847a 1e bc847b 1f bc847c 1g bc848a 1j bc848b 1k bc848c 1l bc856a 3a bc856b 3b bc857a 3e bc857b 3f bc858a 3j

bc858b 3k bc858c 3l 2sa733 cs un2111 v1 un2112 v2 un2113 v3 un2211 v4 un2212 v5 un2213 v6 2sc3356 r23 2sc3838 ad 2n7002 702 2.直插贴片及极性、频率 直插封装的型号贴片的型号极性Ft VCEO Ic hfe 配对型号9011 1T NPN 150MHz 18V 100mA 28~132 9012 2T PNP 150MHz 25V 500mA 64~144 9013 9013 J3 NPN 9014 J6 NPN 150MHz 18V 100mA 60~400 9015 9015 M6 PNP 9016 Y6 NPN 500MHz 20V 25mA 28~97 9018 J8 NPN 700MHZ 12V 100mA 28~72 S8050 J3Y NPN 100MHz 25V 1.5A 45~300 S8550 S8550 2TY PNP 8050 Y1 NPN 100MHz 25V 1A 85~300 8550 8550 Y2 PNP 2SA1015 BA PNP 2SC1815 HF NPN 80MHz 50V 150mA 70~700 1015 2SC945 CR NPN 250MHz 50V 100mA 200~600 2SA733 CS MMBT3904 1AM NPN 300MHz 60V 100mA 300@10mA 3906 MMBT3906 2A PNP MMBT2222 1P NPN 250MHz 60V 600mA 100@150mA MMBT5401 2L PNP 100MHz 150V 500mA 40~200 5551 MMBT5551 G1 NPN MMBTA42 1D NPN 50MHz 300V 100mA 40@10mA MMBTA92 2D PNP BC807-16 5A PNP BC807-25 5B PNP 80MHz 45V 500mA 250@100mA BC817-25 BC807-40 5C PNP 80MHz 45V 500mA 250@100mA BC817-40 BC817-16 6A NPN BC817-25 6B NPN

贴片三极管封装上的印字,与真实名称的对照表

贴片三极管封装上的印字,与真实名称的对照表 印字器件名厂家类型封装器件用途及参数 T2 HSMS-286C HP D SOT323 dual series HSMS-286B T2 HSMS-2862 HP D SOT23 dual series HSMS-286B t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k t2A PMBT3906 Phi N SOT23 2N3906 t2A PMST3906 Phi N SOT323 2N3906 t2B PMBT2907 Phi N SOT23 2N2907 t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V t2F PMBT2907A Phi N SOT23 2N2907A t2F PMBT2907A Phi N SOT323 2N2907A t2G PMBTA56 Phi N SOT23 MPSA56 t2G PMSTA56 Phi N SOT323 MPSA56 t2H PMBTA55 Phi N SOT23 MPSA55 t2H PMSTA55 Phi N SOT323 MPSA55 t2L PMBT5401 Phi N SOT23 2N5401 pnp 150V t2L PMST5401 Phi N SOT323 2N5401 pnp 150V T2p BCX18 Phi N SOT23 BC328 t2T PMBT4403 Phi N SOT23 2N4403 t2T PMST4403 Phi N SOT323 2N4403 T2t BCX18 Phi N SOT23 BC328 t2U PMBTA63 Phi N SOT23 MPSA63 darlington t2V PMBTA* Phi H SOT23 MPSA* darlington t2X PMBT4401 Phi N SOT23 2N4401 t2X PMST4401 Phi N SOT323 2N4401 T3 BSS63 Phi N SOT23 BSS68 T3 HSMS-286E HP A SOT323 ca dual HSMS-286B T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k t32 PDTC143XT Phi N SOT23 pnp dtr 4k7+10ks T32 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 60-105 T33 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 85-150 T34 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 120-220 T4 BCX17R Phi R SOT23R BC327 T4 HSMS-286F HP B SOT323 cc dual HSMS-286B T4 HSMS-28* HP B SOT23 cc dual HSMS-286B T4 MBD330DW Mot DL SOT363 dual UHF schottky diode T42 2SC3545P Nec N - npn RF fT 2GHz hfe 50-100

BC817W贴片三极管 SOT-323三极管封装BC817W参数

A,Aug,2012 EMITTER JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC817W TRANSISTOR (NPN) FEATURES ● For General AF Applications ● High Collector Current ● High Current Gain ● Low Collector-Emitter Saturation Voltage MARKING: BC817-16W: 6A BC817-25W: 6B BC817-40W: 6C MAXMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.5 A P C Collector Dissipation 0.2 W R θJA Thermal Resistance from Junction to Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B = 0 45 V Emitter-base breakdown voltage V (BR)EBO I E =1μA,I C =0 5 V Collector cut-off current I CBO V CB =20V,I E = 0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA h FE(1) V CE =1V,I C = 100mA 100 600 DC current gain h FE(2) V CE =1V,I C = 500mA 40 Collector-emitter saturation voltage V CE(sat)I C =500mA,I B 50mA 0.7 V Base-emitter saturation voltage V BE(sat) I C =500mA,I B =50mA 1.2 V Base-emitter voltage V BE(ON)V CE =1V,I C = 500mA 1.2 V Transition frequency f T V CE =5V,I C =10mA,f = 100MHz 100 MHz Collector output capacitance C ob V CB =10V,f =1MHz 5 pF CLASSIFICATION of h FE (1) Rank BC817-16W BC817-25W BC817-40W Range 100-250 160-400 250-600 https://www.360docs.net/doc/c75595764.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

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