SUM110P06-07L中文资料
FEATURES
D TrenchFET r Power MOSFET
D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive
?12-V Boardnet
?High-Side Switches ?Motor Drives
P-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W
)
I D (A)d
0.0069 @ V GS = ?10 V ?
110?60
0.0088 @ V GS = ?4.5 V
?110
TO-263
Top View
S
G
P-Channel MOSFET
Ordering Information:SUM110P06-07L
SUM110P06-07L—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage V DS ?60Gate-Source Voltage V GS "20V
Continuous Drain Current T C = 25_C ?110d (T J = 175_C)T C = 125_C
I D ?95Pulsed Drain Current I DM ?240A
Avalanche Current
L = 01 mH I AS ?75Single Pulse Avalanche Energy a L = 0.1 mH E AS 281mJ T C = 25_C 375c Power Dissipation
T A = 25_C b P D 3.75W Operating Junction and Storage Temperature Range
T J , T stg
?55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient PCB Mount b R thJA 40Junction-to-Case
R thJC
0.4
_C/W
Notes:
a.Duty cycle v 1%.
b.When mounted on 1” square PCB (FR-4 material).
c.See SOA curve for voltage derating.
d.Limited by packag
e.
SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = ?250 m A ?60Gate Threshold Voltage V GS(th)V DS = V GS , I D = ?250 m A ?1
?3V Gate-Body Leakage
I GSS
V DS = 0 V, V GS = "20 V "100nA
V DS = ?60 V, V GS = 0 V
?1Zero Gate Voltage Drain Current I V DS = ?60 V, V GS = 0 V, T J = 125_C ?50mA g DSS V DS = ?60 V, V GS = 0 V, T J = 175_C
?250
m On-State Drain Current a
I D(on)
V DS = ?5 V, V GS = ?10 V ?120
A V GS = ?10 V, I D = ?30 A
0.0055
0.0069Drain Source On State Resistance DS()
V GS = ?10 V, I D = ?30 A, T J = 125_C 0.0115Drain-Source On-State Resistance a
r DS(on)V GS = ?10 V, I D = ?30 A, T J = 175_C
0.0138W
V GS = ?4.5 V, I D = ?20 A
0.007
0.0088
Forward Transconductance a
g fs
V DS = ?15 V, I D = ?50 A
20
S Dynamic b
Input Capacitance C iss 11400Output Capacitance
C oss V GS = 0 V, V DS = ?25 V, f = 1 MHz
1200pF
Reversen Transfer Capacitance C rss 900Total Gate Charge c Q g 230345
Gate-Source Charge c Q gs V = ?30 V, V = ?10 V, I = ?110 A 50nC Gate-Drain Charge c Q gd DS ,GS ,D 60Gate Resistance R g f = 1.0 MHz
3W
Turn-On Delay Time c t d(on)2030Rise Time c
t r = ? = 0.27 160240Turn-Off Delay Time c t d(off)V DD 30 V, R L 0.27 W I D ] ?110 A, V GEN = ?10 V, R = 2.5 W
200300ns Fall Time c
t f
g 240
360
Source-Drain Diode Ratings and Characteristics (T C = 25_C)b
Continuous Current I s ?110Pulsed Current I SM ?240A Forward Voltage a V SD I F = ?85 A, V GS = 0 V
?1.0?1.5V Reverse Recovery Time t rr 65100ns Peak Reverse Recovery Current I RM(REC)
I = ?85 A, di/dt = 100 A/s ?4.2?6.3A Reverse Recovery Charge
Q rr
F ,m 0.14
0.32
m C
Notes:
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
c.Independent of operating temperature.
50
100
150
200250
15
30
45
60
75
90
04
8
12
16
20
50
100
150
200
250
300
350
400
450
0.000
0.0020.0040.0060.0080.0100.0120.0140.0160
20406080100120
02000
4000600080001000012000140000
10
20
30
40
50
60
012345
2
4
6
8
10
Capacitance Gate Charge
Transconductance
On-Resistance vs. Drain Current
V DS ? Drain-to-Source Voltage (V)
V GS ? Gate-to-Source Voltage (V)
? G a t e -t o -S o u r c e V o l t a g e (V )
? O n -R e s i s t a n c e (Q g ? Total Gate Charge (nC)
I D ? Drain Current (A)
V DS ? Drain-to-Source Voltage (V)C ? C a p a c i t a n c e (p F )
r D S (o n )W )
V G S I D ? Drain Current (A)
? T r a n s c o n d u c t a n c e (S )
g f s
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.50.8
1.1
1.4
1.7
2.0
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
(a )
I D a v r D S (o n ) ? O n -R e s i i s t a n c e (N o r m a l i z e d )
THERMAL RATINGS
050100
150200
Square Wave Pulse Duration (sec)
10?410?310?2
10?1
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
1
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
? D r a i n C u r r e n t (A )
I D