MSA-0485中文资料
Cascadable Silicon Bipolar MMIC?Amplifier
Technical Data
Features
?Cascadable 50 ? Gain Block ? 3 dB Bandwidth:
DC to 3.6 GHz
?8.0 dB Typical Gain at
1.0?GHz
?12.5 dBm Typical P1 dB at
1.0?GHz
?Unconditionally Stable (k>1)
?Low Cost Plastic Package MSA-0485
85 Plastic Package
Description
The MSA-0485 is a high perfor-
mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration
R
V
CC
>7 V IN OUT
plastic package. This MMIC is designed for use as a general purpose 50 ? gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz f T, 25?GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli-zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
MSA-0485 Absolute Maximum Ratings
Parameter
Absolute Maximum [1]
Device Current
85 mA Power Dissipation [2,3]500 mW RF Input Power
+13 dBm Junction Temperature 150°C Storage Temperature
–65 to 150°C
Thermal Resistance [2,4]:
θjc = 90°C/W
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.T CASE = 25°C.
3.Derate at 11.1 mW/°C for T C > 105°C.
4.See MEASUREMENTS section “Thermal Resistance” for more information.
G P Power Gain (|S 21|2) f = 0.1 GHz dB
8.3f = 1.0 GHz 7.0
8.0?G P Gain Flatness f = 0.1 to 2.5 GHz
dB ±0.7f 3 dB 3 dB Bandwidth GHz
3.6Input VSWR f = 0.1 to 2.5 GHz 1.6:1Output VSWR f = 0.1 to 2.5 GHz 2.0:1
NF 50 ? Noise Figure
f = 1.0 GHz dB 7.0P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5IP 3Third Order Intercept Point f = 1.0 GHz dBm 25.5t D Group Delay f = 1.0 GHz psec 125V d Device Voltage
V 4.2
5.25
6.3
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1.The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page.
Electrical Specifications [1], T A = 25°C
Symbol
Parameters and Test Conditions: I d = 50 mA, Z O = 50 ?
Units
Min.
Typ.
Max.
VSWR
MSA-0485 Typical Scattering Parameters (Z O = 50 ?, T A = 25°C, I d = 50 mA)
Freq.GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1.211778.4 2.63175–16.1.1562.08–160.2.201768.3 2.60171–16.2.1552.08–300.4.201728.2 2.57163–16.1.1563.10–540.6.191718.1 2.55155–16.2.1555.13–710.8.191688.1 2.54146–16.0.1586.16–831.0.181668.0 2.52138–15.7.1649.18–931.5.161677.8 2.46117–15.3.17111.25
–1162.0.181687.4 2.3497–14.6.18712.29–1362.5.21173 6.9 2.2183–13.8.20416.34–1503.0.27169 6.3 2.0765–13.4.21313.38–1613.5.33161 5.7 1.9248–12.6.2349.39–1724.0.38154 4.8 1.7433–12.3.2426.37–1794.5.42145 4.1 1.5918–12.1.2493.36–1745.0.44131 3.3 1.464–11.7.259–3.34–165
A model for this device is available in the DEVICE MODELS section.
S 11S 21S 12 S 22Typical Performance, T A = 25°C
(unless otherwise noted)
24
6810
12G p
(d B )
Figure 1. Typical Power Gain vs. Frequency, T A = 25°C, I d = 50 mA.
FREQUENCY (GHz)
V d (V)
Figure 2. Device Current vs. Voltage.020
40
60
80
I d (m A )
2
3
45
6
7
1
I d (mA)
Figure 3. Power Gain vs. Current.
4
5
6
7
8
9
G p (d B )
20
40
5060
70
30
–25
+25
+55
+85
P 1 d B (d B m )
N F (d B )
G p (d B )TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, I d =50mA.
0.1
0.20.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
369
121518
21P 1 d B (d B m )
6.0
5.5
6.5
7.0
7.5
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
N F (d B )
85 Plastic Package Dimensions
1. Dimensions are in
mm