DS3070W-100#;中文规格书,Datasheet资料

General Description

The DS3070W consists of a static RAM, a nonvolatile (NV) controller, a year 2000-compliant real-time clock (RTC), and an internal rechargeable manganese lithium (ML) battery. These components are encased in a sur-face-mount module with a 256-ball BGA footprint.Whenever V CC is applied to the module, it recharges the ML battery, powers the clock and SRAM from the external power source, and allows the contents of the clock registers or SRAM to be modified. When V CC is powered down or out-of-tolerance, the controller write-protects the memory contents and powers the clock and SRAM from the battery. The DS3070W also con-tains a power-supply monitor output (RST ), as well as a user-programmable interrupt output (IRQ /FT).

Applications

RAID Systems and Servers Gaming POS Terminals Fire Alarms Industrial Controllers PLCs

Data-Acquisition Systems

Routers/Switches

Features

o Single-Piece, Reflowable, 27mm x 27mm BGA Package Footprint o Internal Manganese Lithium Battery and Charger o Integrated Real-Time Clock

o Unconditionally Write-Protects the Clock and SRAM when V CC is Out-of-Tolerance o Automatically Switches to Battery Supply when V CC Power Failures Occur o Reset Output can be Used as a CPU Supervisor o Interrupt Output can be Used as a CPU Watchdog Timer o Industrial Temperature Range (-40°C to +85°C)o UL Recognized

DS3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM

with Clock

______________________________________________Maxim Integrated Products

Typical Operating Circuit

Rev 1; 10/06

For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at https://www.360docs.net/doc/e91944015.html,.

Ordering Information

Pin Configuration appears at end of data sheet.

#Denotes a RoHS-compliant device that may include lead that is exempt under the RoHS requirements.

D S 3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 2_____________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Voltage Range on Any Pin Relative to Ground......-0.3V to +4.6V Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range...............................-40°C to +85°C Soldering Temperature Range..........See IPC/JEDEC J-STD-020

PIN CAPACITANCE

DC ELECTRICAL CHARACTERISTICS

DS3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM

with Clock

_____________________________________________________________________3

AC ELECTRICAL CHARACTERISTICS

(V CC = 3.3V ±0.3V, T A = -40°C to +85°C.)

POWER-DOWN/POWER-UP TIMING

D S 3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 4_____________________________________________________________________

Note 1:IRQ /FT and RST are open-drain outputs and cannot source current. External pullup resistors should be connected to these pins to realize a logic-high level.

Note 2:These parameters are sampled with a 5pF load and are not 100% tested.

Note 3:t WP is specified as the logical AND of CE with WE for SRAM writes, or CS with WE for RTC writes. t WP is measured from the latter of the two related edges going low to the earlier of the two related edges going high.Note 4:t WR1and t DH1are measured from WE going high.

Note 5:t WR2and t DH2are measured from CE going high for SRAM writes or CS going high for RTC writes.

Note 6:t DS is measured from the earlier of CE or WE going high for SRAM writes, or from the earlier of CS or WE going high for RTC writes.

Note 7:In a power-down condition, the voltage on any pin may not exceed the voltage on V CC .

Note 8:

The expected t DR is defined as accumulative time in the absence of V CC starting from the time power is first applied by the user. Minimum expected data-retention time is based upon a maximum of two +230°C convection reflow exposures, fol-lowed by a fully charged cell. Full charge occurs with the initial application of V CC for a minimum of 96 hours. This parame-ter is assured by component selection, process control, and design. It is not measured directly during production testing.Note 9:WE is high for any read cycle.

Note 10:OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high-impedance state.

Note 11:If the CE or CS low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high-impedance state during this period.

Note 12:If the CE or CS high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high-impedance state during this period.

Note 13:

If WE is low or the WE low transition occurs prior to or simultaneously with the related CE or CS low transition, the output buffers remain in a high-impedance state during this period.

DATA RETENTION

AC TEST CONDITIONS

Input Pulse Levels:

V IL = 0.0V, V IH = 2.7V Input Pulse Rise and Fall Times:

5ns Input and Output Timing Reference Level: 1.5V

Output Load: 1 TTL Gate + C L (100pF) including scope and jig

DS3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM

with Clock

_____________________________________________________________________5

Read Cycle

D S 3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock

Write Cycle 1

Write Cycle 2

DS3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM

with Clock

_____________________________________________________________________7

Power-Down/Power-Up Condition

Typical Operating Characteristics

(V CC = 3.3V, T A = +25°C, unless otherwise noted.)

042861012SUPPLY CURRENT

vs. OPERATING FREQUENCY

V CC (V)

S U P P L Y C U R R E N T (m A )

3.0

3.2

3.33.1

3.4

3.5

3.6

500

600

800

700

9001000

3.0

3.2

3.1

3.3 3.4

3.5

3.6

SUPPLY CURRENT vs. SUPPLY VOLTAGE

V CC (V)

S U P P L Y C U R R E N T (μA )

0123456

0.2

0.4

0.6

0.8

1.0

BATTERY CHARGER CURRENT vs. BATTERY VOLTAGE

DELTA V BELOW V CHARGE (V)

B A T T E R Y

C H A R G E R C U R R E N T , I C H A R G E (m A )

D S 3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 8_____________________________________________________________________

1.00.50-0.5-1.0

-40

-15

V CHARGE PERCENT CHANGE

vs. TEMPERATURE

TEMPERATURE (°C)

V C H A R G E P E R C E N T C H A N G E F R O M 25°C (%)

3.002.95

2.90

2.85

2.80

-40

-15

V TP vs. TEMPERATURE

D S 3070W t o c 05

TEMPERATURE (°C)

W R I T E P R O T E C T , V T P (V

)

2.5

2.7

3.1

2.9

3.3

3.5

-5

-3

-4

-2

-1

DQ V OH vs. DQ I OH

I OH (mA)

V O H (V )

0.4

0.3

0.20.1

DQ V OL vs. DQ I OL

I OL (mA)

V O L (V )

00.2

0.1

0.4

0.30.50.60

105

IRQ/FT OUTPUT VOLTAGE LOW vs. OUTPUT CURRENT LOW

I OL

(mA)

V O L (V )

00.20.10.40.30.50.6

105

20I OL (mA)

V O L (V )

vs. OUTPUT CURRENT LOW

01.00.52.01.52.53.03.54.0

1.0 1.50.5

2.0 2.5

3.0 3.5

4.0

V CC POWER-UP (V)

RST VOLTAGE

vs. V CC DURING POWER-UP

R S T V O L T A G E W I T H P U L L U P R E S I S T O R (V )

Typical Operating Characteristics (continued)

(V CC = 3.3V, T A = +25°C, unless otherwise noted.)

DS3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM

with Clock

_____________________________________________________________________9

Pin Description

D S 3070W

3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 10____________________________________________________________________

Functional Diagram

分销商库存信息: MAXIM

DS3070W-100#