5SNA 1600N170100_1700_1600-ABB

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06

? Low-loss, rugged SPT chip-set ? Smooth switching SPT chip-set for good EMC

? Industry standard package ? High power density

? AlSiC base-plate for high power cycling capability

? AlN substrate for low thermal resistance

Maximum rated values 1)

Parameter

Symbol Conditions min max Unit Collector-emitter voltage V CES V GE = 0 V, T vj ≥ 25 °C 1700 V DC collector current I C T c = 80 °C 1600 A Peak collector current I CM t p = 1 ms, T c = 80 °C 3200 A Gate-emitter voltage V GES

-20 20 V Total power dissipation P tot T c = 25 °C, per switch (IGBT) 9100 W DC forward current I F 1600 A Peak forward current I FRM

3200

Surge current

I FSM V R = 0 V, T vj = 125 °C, t p = 10 ms, half-sinewave 13200 A IGBT short circuit SOA t psc V CC = 1200 V, V CEM CHIP ≤ 1700 V V GE ≤ 15 V, T vj ≤ 125 °C 10

μs

Isolation voltage V isol 1 min, f = 50 Hz 4000 V Junction temperature

T vj 150 °C Junction operating temperature T vj(op) -40 125 °C Case temperature T c -40 125 °C Storage temperature T stg

-40 125 °C

M s Base-heatsink, M6 screws 4 6 M t1 Main terminals, M8 screws 8 10 Mounting torques 2)

M t2

Auxiliary terminals, M4 screws

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2)

For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01

Parameter Symbol Conditions

min typ max Unit Collector (-emitter) breakdown voltage V (BR)CES V GE = 0 V, I C = 10 mA, T vj = 25 °C 1700 V T vj = 25 °C 2.0 2.3 2.6 V Collector-emitter 4) saturation voltage V CE sat I C = 1600 A, V GE = 15 V T vj = 125 °C 2.3 2.6 2.9 V T vj = 25 °C 8 mA Collector cut-off current I CES V CE = 1700 V, V GE = 0 V

T vj = 125 °C

80 mA Gate leakage current I GES V CE = 0 V, V GE = ±20 V, T vj = 125 °C -500 500 nA Gate-emitter threshold voltage V GE(TO) I C = 160 mA, V CE = V GE , T vj = 25 °C 4.5 6.5 V Gate charge Q ge I C = 1600 A, V CE = 900 V, V GE = -15 V .. 15 V

14.6 μC

Input capacitance C ies 152 Output capacitance

C oes 14.6 Reverse transfer capacitance C res V CE = 25 V, V GE = 0 V, f = 1 MHz, T vj = 25 °C

6.4 nF T vj = 25 °C 290 Turn-on delay time t d(on) T vj = 125 °C 300 ns T vj = 25 °C 175 Rise time

t r V CC = 900 V, I C = 1600 A, R G = 0.82 ?, V GE = ±15 V,

L σ = 50 nH, inductive load T vj = 125 °C 190 ns T vj = 25 °C 1050 Turn-off delay time t d(off) T vj = 125 °C 1140 ns T vj = 25 °C 150 Fall time

t f

V CC = 900 V, I C = 1600 A, R G = 0.82 ?, V GE = ±15 V,

L σ = 50 nH, inductive load T vj = 125 °C 170 ns T vj = 25 °C 380 Turn-on switching energy E on V CC = 900 V, I C = 1600 A, V GE = ±15 V, R G = 0.82 ?, L σ = 50 nH, inductive load T vj = 125 °C 530 mJ

T vj = 25 °C 460 Turn-off switching energy E off V CC = 900 V, I C = 1600 A, V GE = ±15 V, R G = 0.82 ?, L σ = 50 nH, inductive load

T vj = 125 °C

590 mJ Short circuit current I SC t psc ≤ 10 μs, V GE = 15 V, T vj = 125 °C, V CC = 1200 V, V CEM CHIP ≤ 1700 V 7200 A Module stray inductance L σ CE

15 nH T C = 25 °C 0.10 Resistance, terminal-chip

R CC’+EE’

T C = 125 °C

0.13

m ?

3) Characteristic values according to IEC 60747 – 9

Collector-emitter saturation voltage is given at chip level

Parameter Symbol Conditions min

typ max Unit T vj = 25 °C 1.65 2.0 Forward voltage 6) V F I F = 1600 A

T vj = 125 °C 1.7 2.0 V T vj = 25 °C

1090 Reverse recovery current I rr T vj = 125 °C 1400 A T vj = 25 °C 390 Recovered charge Q rr T vj = 125 °C 690 μC T vj = 25 °C 620 Reverse recovery time t rr T vj = 125 °C 830 ns T vj = 25 °C 280 Reverse recovery energy

E rec

V CC = 900 V, I F = 1600 A, V GE = ±15 V, R G = 0.82 ? L σ = 50 nH inductive load

T vj = 125 °C

480

5) Characteristic values according to IEC 60747 – 2 6)

Forward voltage is given at chip level

Thermal properties 7)

Parameter

Symbol Conditions min typ max Unit IGBT thermal resistance junction to case

R th(j-c)IGBT

0.011 K/W

Diode thermal resistance junction to case

R th(j-c)DIODE

0.018 K/W IGBT thermal resistance 2) case to heatsink

R th(c-s)IGBT IGBT per switch, λ grease = 1W/m x K 0.012 K/W Diode thermal resistance 7) case to heatsink

R th(c-s)DIODE Diode per switch, λ grease = 1W/m x K

0.024

K/W

For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01

Mechanical properties 7)

Parameter Symbol Conditions

min typ max Unit

Dimensions

L x W

x H Typical , see outline drawing

130 x 140 x 38

mm Term. to base: 19 Clearance distance in air d a according to IEC 60664-1 and EN 50124-1 Term. to term: 19 mm Term. to base: 32 Surface creepage distance d s according to IEC 60664-1 and EN 50124-1 Term. to term: 32 mm Mass

920

Thermal and mechanical properties according to IEC 60747 – 15

Outline drawing 2)

Note: all dimensions are shown in mm 2)For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level.

Fig. 3 Fig. 4

vs collector current vs gate resistor

vs collector-emitter voltage

vs forward current vs di/dt

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1564-01 Oct 06

Semiconductors Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@https://www.360docs.net/doc/e43541944.html, Internet https://www.360docs.net/doc/e43541944.html,/semiconductors

Analytical function for transient thermal

impedance:

)

-(1R = (t)Z n

i t/-i c)-(j th ∑=i

i 1 2 3

R i (K/kW) 7.59 1.8 0.743 0.369 I G B T

τi (ms) 202 20.3 2.01 0.52 R i (K/kW) 12.6 2.89 1.3 1.26

D I O D E

τi (ms)

210

29.6

7.01

1.49

For detailed information refer to:

? 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays ? 5SYA 2043-01 Load – cycle capability of HiPaks

? 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)