STGP12NB60HD;中文规格书,Datasheet资料

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October 2003STGP12NB60HD

N-CHANNEL 18A -600V TO-220

PowerMESH?IGBT

s HIGH INPUT IMPEDANCE

s LOW ON-VOLTAGE DROP (V cesat )

s OFF LOSSES INCLUDE TAIL CURRENT s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s VERY HIGH FREQUENCY OPERATION s

CO-PACKAGED WITH TURBOSWITCHT ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout,STMicroelectronics has de-signed an advanced family of

IGBTs,the Power-MESH?IGBTs,with outstanding perfomances.The suffix "H"identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall)mantaining a low

voltage drop.

APPLICATIONS

s HIGH FREQUENCY MOTOR CONTROLS

s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS

ORDERING INFORMATION

TYPE V CES V CE(sat)

(Max)@25°C

I C

@100°C

STGP12NB60HD

600V

<2.8 V 18A

SALES TYPE MARKING PACKAGE PACKAGING

STGP12NB60HD

GP12NB60HD

TO-220

TUBE

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STGP12NB60HD

2/9

ABSOLUTE MAXIMUM RATINGS

( )Pulse width limited by safe operating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)OFF

ON (1)

DYNAMIC

Symbol Parameter

Value Unit V CES Collector-Emitter Voltage (V GS =0)600V V ECR Emitter-Collector Voltage 20V V GE Gate-Emitter Voltage

±20V I C Collector Current (continuous)at T C =25°C (#)30A I C Collector Current (continuous)at T C =100°C (#)18A I CM ( )Collector Current (pulsed)60A P TOT Total Dissipation at T C =25°C 125W Derating Factor 1.0W/°C T stg Storage Temperature

–65to 150

°C T j

Max.Operating Junction Temperature

150

°C

Rthj-case Thermal Resistance Junction-case Max 1.0°C/W Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V BR(CES)Collector-Emitter Breakdown Voltage I C =250μA,V GE =0

600V I CES Collector cut-off (V GE =0)

V CE =Max Rating,T C =25°C 50μA V CE =Max Rating,T C =125°C

100

μA I GES

Gate-Emitter Leakage Current (V CE =0)

V GE =±20V ,V CE =0

±100

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit V GE(th)Gate Threshold Voltage

V CE =V GE ,I C =250μA 3

5V V CE(sat)

Collector-Emitter Saturation Voltage

V GE =15V,I C =12A

2.0 2.8

V V GE =15V,I C =12A,Tj =125°C

1.7

Symbol Parameter Test Conditions

Min.Typ.Max.Unit g fs

Forward Transconductance V CE =15V ,I C =12A

10S C ies

Input Capacitance V CE =25V,f =1MHz,V GE =0

920pF C oes Output Capacitance 120pF C res Reverse Transfer Capacitance

pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE =480V,I C =12A,V GE =15V

681030

nC nC I CL

Latching Current

V clamp =480V , Tj =150°C R G =10?

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STGP12NB60HD

ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON

SWITCHING OFF

COLLECTOR-EMITTER DIODE

Note: 1.Pulsed:Pulse duration =300μs,duty cycle 1.5%.

2.Pulse width limited by max.junction temperature.(**)Losses include Also the Tail (Jedec Standardization)

(#)Calculated according to the iterative formula:

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V CC =480V,I C =12A R G =10?,V GE =15V 546ns ns (di/dt)on Eon

Turn-on Current Slope Turn-on Switching Losses

V CC =480V,I C =12A R G =10?,V GE =15V,Tj =125°C

700290

A/μs μJ

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t c Cross-over Time V cc =480V,I C =12A,R GE =10?,V GE =15V

150ns t r (V off )Off Voltage Rise Time 27ns t d (off )Delay Time 91ns t f Fall Time

100ns

E off (**)Turn-off Switching Loss 0.21m J E ts Total Switching Loss 0.49m J

t c Cross-over Time V cc =480V,I C =12A,R GE =10?,V GE =15V Tj =125°C

230ns t r (V off )Off Voltage Rise Time 76ns t d (off )Delay Time 95

ns t f Fall Time

200

E off (**)Turn-off Switching Loss 0.45m J E ts

Total Switching Loss

0.74

m J

Symbol

Parameter

Test Conditions

Min.

Typ.Max.Unit I f I fm Forward Current

Forward Current pulsed 12

A A V f Forward On-Voltage

I f =6A

I f =6A,Tj =125°C

1.31.1 1.9

V V t rr Q rr I rrm

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I f =6A ,V R =50V,

Tj =125°C,di/dt =100A/μs

802405.5

ns nC A

I C T C ()T JMAX T C

–R THJ C –V CESAT MAX ()T C I C ,()

×--------------------------------------------------------------------------------------=

O STGP12NB60HD

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STGP12NB60HD

Normalized Breakdown Voltage vs Temperature

Total Switching Losses vs Temperature

Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Collector Current

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STGP12NB60HD

Fig.2:Test Circuit For Inductive Load Switching

Fig.1:Gate Charge test Circuit

STGP12NB60HD

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STGP12NB60HD

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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STGP12NB60HD