DTS3402进口MOS管方案

N-Channel 30-V (D-S) MOSFET

FEATURES

?Halogen-free According to IEC 61249-2-21Definition

?TrenchFET ? Power MOSFET ?100 % R g Tested

?Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

?DC/DC Converter

PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)

a Q g (Typ.)30

0.058 at V GS = 10 V 3.6 2.1 nC

0.073 at V GS = 4.5 V

3.6

a.Package limited

b.Surface Mounted on 1" x 1" FR4 board.

c.t = 5 s.

d.Maximum under steady state conditions is 130 °C/W.

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter

Symbol Limit Unit Drain-Source Voltage V DS 30

Gate-Source Voltage

V GS ± 20

Continuous Drain Current (T J = 150 °C)T C = 25 °C I D

3.6a A T C = 70 °C 3.3

T A = 25 °C 3.3

T A = 70 °C

2.7

Pulsed Drain Current

I DM 15

Continuous Source-Drain Diode Current

T C = 25 °C I S

1.4

T A = 25 °C 0.9b, c Maximum Power Dissipation

T C = 25 °C P D 1.7W

T C = 70 °C

1.1

T A = 25 °C 1.1b, c T A = 70 °C

0.7b, c

Operating Junction and Storage T emperature Range T J , T stg - 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e 260

THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, d

t ≤ 5 s R thJA 90115°C/W

Maximum Junction-to-Foot (Drain)Steady State R thJF

6075

Notes:

a.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b.Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 μA

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA

31mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5

Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 μA 1.2 2.2V Gate-Source Leakage

I GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 30 V , V GS = 0 V 1μA V DS = 30 V, V GS = 0 V , T J = 55 °C

On-State Drain Current a

I D(on)V DS ≥ 5 V , V GS = 10 V 10

A Drain-Source On-State Resistance a R DS(on)V GS = 10 V , I D = 3.2 A 0.0490.058ΩV GS = 4.5 V, I D = 2.8 A 0.0610.073

Forward T ransconductance a g fs

V DS = 15 V , I D = 4.8 A

Dynamic b

Input Capacitance C iss V DS = 15 V , V GS = 0 V , f = 1 MHz

235pF

Output Capacitance

C oss 45Reverse Transfer Capacitance C rss 17Total Gate Charge Q g V DS = 15 V , V GS = 10 V , I

D = 3.4 A 4.5 6.7nC V DS = 15 V , V GS = 4.5 V , I D = 3.4 A 2.1 3.2

Gate-Source Charge Q gs 0.85Gate-Drain Charge Q gd 0.65Gate Resistance R g f = 1 MHz

0.8

4.48.8Ω

Turn-On Delay Time t d(on) V DD = 15 V , R L = 5.6 Ω

I D ? 2.7 A, V GEN = 4.5 V , R g = 1 Ω

1220ns Rise Time

t r 5075Turn-Off Delay Time t d(off) 1220Fall Time

t f 2235Turn-On Delay Time t d(on) V DD = 15 V , R L = 5.6 Ω

I D ? 2.7 A, V GEN = 10 V , R g = 1 Ω510Rise Time

t r 1220Turn-Off Delay Time t d(off) 1015Fall Time

t f

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C

1.4A Pulse Diode Forward Current I SM 15Body Diode Voltage

V SD I S = 2.7 A, V GS = 0 V

0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 2.7 A, dI/dt = 100 A/μs, T J = 25 °C

1020ns Body Diode Reverse Recovery Charge Q rr 510

nC Reverse Recovery Fall Time t a 6ns

Reverse Recovery Rise Time

t b

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

Single Pulse Power

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

*The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Normalized Thermal Transient Impedance, Junction-to-Ambient

SOT-23 (TO-236): 3-LEAD

Dim

MILLIMETERS INCHES

Min

Max

Min

Max

A 0.89 1.120.0350.044A 10.010.100.00040.004A 20.88 1.020.03460.040b 0.350.500.0140.020c

0.0850.180.0030.007D 2.803.040.1100.120E 2.10 2.640.0830.104E 1 1.20

1.40

0.047

0.055

e 0.95 BSC 0.0374 Re

f e 1 1.90 BSC

0.0748 Ref

L 0.40

0.60

0.016

0.024

L 10.64 Ref 0.025 Ref S 0.50 Ref

0.020 Ref

3°

8°

3°

8°

ECN: S-03946-Rev. K, 09-Jul-01DWG: 5479

A P P L I C A T I O N N RECOMMENDED MINIMUM PADS FOR SOT-23