文献检索第四单元

第4单元外文评价性数据库检索练习

学院：信息学院班级：电子09（2）班姓名：刘颖学号：200920203075

一、Ei Compendex Web

方法一：直接链接到https://www.360docs.net/doc/fc10737983.html,

方法二：进入学校图书馆主页（https://www.360docs.net/doc/fc10737983.html,），点击检索工具中的“工程索引[EI]”进入。

要求：该数据库至少需用两个检索词进行检索，最终命中文献应少于100篇。

（一）Q uick Search检索练习

检索课题（中文）：电磁辐射保护

检索主题（英文）：electromagnetic radiation protect

所选字段检索词

（1）title electromagnetic radiation

（2）title protect

限定条件语种English

年代2009--2012 其它无

检索式(((electromagnetic radiation) WN TI) AND ((protect) WN TI)), English only

检索结果（命中文献篇数）：3

（二）Expert Search检索练习

检索课题（中文）：通信工程编码

检索主题（英文）：communication engineering coding

说明：输入检索词后，采用"wn"命令(within)，可以在特定的字段内进行检索，在表达式中可以采用布尔运算符(AND, OR, NOT)，同时，可使用括号指定检索的顺序，另外还可以把“取词根”、“截词”、“通配符”等检索方法运用的检索表达式中。

如：(artificial intelligence) wn AB AND (Tsinghua) wn AF

1．检索式

communication engineering) wn AB AND (coding) wn AF

2．时间范围2009--2012 检索结果： 1 （篇）要求少于100篇3．摘抄其中一篇相关文献的题录

二、Derwent Innovation Index

选用的数据库：德温特创新索引DII

方法一：直接链接到https://www.360docs.net/doc/fc10737983.html,/

方法二：进入学校图书馆主页（https://www.360docs.net/doc/fc10737983.html,/），点击“专利文献”中的“DII”。

要求:检索结果应少于100篇文献，摘抄其中一篇相关文献的题录。

检索课题（中文）：数字滤波器设计与电磁反应

检索主题（英文）：digital filter design and Electromagnetic response

字段检索词逻辑算符

主题digital filter design and

主题Electromagnetic response

检索结果（篇） 5

专利名称Backside-illuminated photosensitive imager device for digital camera, has semiconductor substrate and textured region that are positioned, where

incoming electromagnetic radiation passes through substrate before contacting

textured region

专利号US2011220971-A1 发明者姓名HADDAD H, JIANG J,

MCKEE J, MILLER D,

PALSULE C, FORBES L 专利权人SIONYX INC 国际专利分类号H01L-027/148

摘要NOVELTY - A textured polysilicon region (38) is coupled to a semiconductor substrate (32) and positioned to interact with electromagnetic radiation. A passivation region positioned between the textured region and a junction, is positioned to isolate the junction from the textured region. The substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the substrate before contacting the textured region. An electrical transfer element (37) is coupled to the substrate and operable to transfer an electrical signal from junction.

Title Network Coding: A Historical Perspective

Author Yeung, R.W.

Author Affiliation Dept. of Inf. Eng., Chinese Univ. of Hong Kong, Hong Kong,

China

Source Proceedings of the IEEE

USE - Backside-illuminated photosensitive imager device of back-side illuminated photosensitive imager array (claimed) for digital and video camera, cell phone, and optical mice. The textured region is formed of the semiconductor material including a group consisting of silicon, polysilicon, and amorphous silicon.

ADV ANTAGE - The increase in the absorption of semiconductor materials increases the absorption path length for longer wavelengths. The increased absorption path length results in an apparent reduction in the absorption depth, or a reduced apparent or effective absorption depth. The imager device is able to absorb longer wavelengths within a thin semiconductor material by increasing the absorption path length. The response rate or response speed can also be increased using thinner semiconductor materials by decreasing the effective absorption depth. The device provides enhanced response in the near infrared light portion of the optical spectrum and improved response and quantum efficiency in converting electromagnetic radiation to electrical signals. The backside-illuminated photosensitive imager device provides a more direct path for light to travel into the pixel, thus avoiding light blockage by the metal interconnect and dielectric layers on the top-side of the semiconductor substrate. The backside-illuminated photosensitive imager device designs allow for smaller pixel architecture and a high fill factor for the imager. More complex structures can provide not only increased quantum efficiency but also good uniformity from pixel to pixel. The device exhibits increased responsivity. The textured region can function to diffuse electromagnetic radiation, to redirect electromagnetic radiation, and to absorb electromagnetic radiation, thus increasing the quantum efficiency of the device. The tuning of the device can allow specific wavelengths or ranges of wavelengths to be reduced or eliminated through filtering. The textured regions can allow a photosensitive device to experience multiple passes of incident electromagnetic radiation within the device, particularly at longer wavelengths, such internal reflection increases the effective absorption length to be greater than the thickness of the semiconductor substrate so as to increase in absorption length increases the quantum efficiency of the device, leading to an improved signal to noise ratio. A low temperature anneal can greatly enhance the external quantum efficiency of device. The semiconductor substrate can be thinned to improve the response rate and/or speed of the device.