2SB1694T106中文资料

Transistors
Rev.A 1/2
General purpose amplification (−30V, −1A)
2SB1694
z Application
Low frequency amplifier Driver
z Features
1) A collector current is large.
2) Collector saturation voltage is low. V CE(sat) ≤ −380mV
At I C = −500mA / I B = −25mA z External dimensions (Unit : mm)
z Absolute maximum ratings (T a=25°C)
Parameter Symbol
V CBO
V CEO V EBO I C
I CP P C Tj Tstg Limits −30−30−6−1200150−55 to +150−2
∗Unit V V V A A mW °C °C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature Range of storage temperature ∗Single pulse, P W =1ms
z Packaging specifications
z Electrical characteristics (T a=25°C)
Parameter
Symbol Min.Typ.Max.Unit Conditions
V CB = −10V, I E =0A, f =1MHz
f T −320−MHz V CE = −2V, I E =100mA, f =100MHz BV CBO −30−−V I C = −10µA BV CEO −30−−V I C = −1mA BV EBO −6−−V I E = −10µA I CBO −−−100nA V CB = −30V I EBO −−−100nA V EB = −6V
V CE(sat)−−180−380mV I C = −500mA, I B = −25mA h FE 270−680−V CE = −2V, I C = −100mA Cob −7−pF ∗1∗1
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current
Collector-emitter saturation voltage DC current gain
Transition frequency
Corrector output capacitance
∗1 Pulsed
Transistors
Rev.A 2/2
z Electrical characteristic curves
COLLECTOR CURRENT : I C (A)10D C C U R R E N T G A I N : h F E
1000
100Fig.1 DC current gain
vs. collector current
COLLECTOR CURRENT : I C (A)B A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s
a t ) (V )
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage vs. collector current
COLLECTOR CURRENT : I C
(A)
C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )
Fig.3 Collector-emitter saturation voltage
vs. collector current
BASE TO EMITTER CURRENT : V BE (V)
C O L L
E C T O R C U R R E N T : I C (A )
Fig.4 Grounded emitter propagation
characteristics
EMITTER CURRENT : I E (A)
T R A N S I T I O N F R E Q U E N C Y : f T (M H z )
Fig.5 Gain bandwidth product
vs. emitter current
COLLECTOR CURRENT : I C (A)
Fig.6 Switching time
S W I T C H I N G T I M E : (n s )
C O L L E C T O R O U T P U T C A
P A C I T A N C E : C o b (p F )
E M I T T E R I N P U T C A P A C I T A N C E : C i b (p
F )Fig.7 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : V EB (V)
COLLECTOR TO BASE VOLTAGE : V CB (V)
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
C O L L E C T O R C U R R E N T : I C (A )
Fig.8 Safe Operating Area
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1。