M74HC30B1R,M74HC30B1R, 规格书,Datasheet 资料

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July 2001s

HIGH SPEED:

t PD = 13ns (TYP .) at V CC = 6V s

LOW POWER DISSIPATION:I CC = 1μA(MAX.) at T A =25°C s HIGH NOISE IMMUNITY:

V NIH = V NIL = 28 % V CC (MIN.)

s

SYMMETRICAL OUTPUT IMPEDANCE:|I OH | = I OL = 4mA (MIN)

s

BALANCED PROPAGATION DELAYS:t PLH ? t PHL

s

WIDE OPERATING VOLTAGE RANGE:V CC (OPR) = 2V to 6V

s

PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 30

DESCRIPTION

The M74HC30 is an high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C 2MOS technology.

The internal circuit is composed of 5 stages including buffer output, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

M74HC30

8-INPUT NAND GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC30B1R SOP M74HC30M1R

M74HC30RM13TR TSSOP

M74HC30TTR

e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s ) b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d

O

b s o l e t e P r o d u

c t (s ) - O b s o l e t e P r o

d u c t (s ) M74HC30

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INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

RECOMMENDED OPERATING CONDITIONS

PIN No

SYMBOL

NAME AND FUNCTION

1, 2, 3 ,4, 5, 6, 11, 12A, B, C, D, E,

F, G, H, Data Inputs

9, 10, 13NC Not connected

8Y Data Output 7GND Ground (0V)

14

V CC Positive Supply Voltage A

B

C

D

E

F

G H

Y

L X X X X X X

X H X L X X X X X X H X X L X X X X X H X X X L X X X X H X X X X L X X X H X X X X X L X X H X X X X X X L X H X X X X X X X L H H

H

H

H

H

H

H

H

L

Symbol Parameter Value Unit V CC Supply Voltage -0.5 to +7

V V I DC Input Voltage

-0.5 to V CC + 0.5V V O DC Output Voltage

-0.5 to V CC + 0.5

V

I IK DC Input Diode Current ± 20mA I OK

DC Output Diode Current

± 20mA I O

DC Output Current

± 25

mA

I CC or I GND DC V CC or Ground Current

± 50mA P D Power Dissipation

500(*)mW T stg Storage Temperature

-65 to +150

°C

T L

Lead Temperature (10 sec)

300

°C

Symbol Parameter

Value Unit V CC Supply Voltage 2 to 6

V V I Input Voltage 0 to V CC V V O Output Voltage

0 to V CC V T op Operating Temperature -55 to 125

°C t r , t f

Input Rise and Fall Time

V CC = 2.0V 0 to 1000ns V CC = 4.5V 0 to 500ns V CC = 6.0V

0 to 400

ns

O b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )

O

b s o l e t e P r o d u

c t (s ) - O b s o l e t e P r o

d u c t (s ) M74HC30

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DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = t f = 6ns)

CAPACITIVE CHARACTERISTICS

1) C PD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I CC(opr) = C PD x V CC x f IN + I CC

Symbol

Parameter

Test Condition

Value Unit

V CC (V)T A = 25°C -40 to 85°C -55 to 125°C Min.Typ.

Max.

Min.Max.

Min.Max.

V IH

High Level Input Voltage

2.0 1.5 1.5 1.5V 4.5

3.15 3.15 3.156.0

4.2

4.2

4.2

V IL

Low Level Input Voltage

2.00.50.50.5V

4.5 1.35 1.35 1.356.0 1.8

1.8 1.8V OH

High Level Output Voltage

2.0

I O =-20 μA 1.9 2.0 1.9 1.9V

4.5I O =-20 μA 4.4 4.5 4.4 4.46.0I O =-20 μA

5.9

6.0

5.9

5.9

4.5

I O =-4.0 mA 4.18 4.31 4.13 4.106.0

I O =-5.2 mA 5.68

5.8 5.63

5.60

V OL

Low Level Output

Voltage

2.0

I O =20 μA 0.00.10.10.1V

4.5I O =20 μA 0.00.10.10.16.0I O =20 μA

0.0

0.1

0.1

0.1

4.5

I O =4.0 mA 0.170.260.330.406.0

I O =5.2 mA

0.18

0.26

0.330.40I I Input Leakage Current

6.0V I = V CC or GND ± 0.1± 1± 1μA

I CC

Quiescent Supply Current

6.0

V I = V CC or GND

1

10

20

μA

Symbol Parameter

Test Condition

Value

Unit

V CC (V)T A = 25°C -40 to 85°C -55 to 125°C Min.Typ.Max.Min.Max.Min.

Max.t TLH t THL Output Transition

Time

2.0307595110ns

4.581519226.07131619t PLH t PHL Propagation Delay

Time

2.0451********ns

4.5152329346.0

13

20

25

29

Symbol Parameter

Test Condition Value

Unit

V CC (V)T A = 25°C -40 to 85°C -55 to 125°C Min.

Typ.Max.Min.

Max.Min.

Max.C IN Input Capacitance 5.0510

10

10

pF C PD

Power Dissipation Capacitance (note 1)

5.0

20

pF

O b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )

t M74HC30

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TEST CIRCUIT

L R T = Z OUT of pulse generator (typically 50?)

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

O

b s o l e t e P r o d u

c t (s ) - O b s o l e t e P r o

d u c t (s ) M74HC30

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