FQPF13N50中文资料

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FQP13N50C中文资料

FQP13N50C中文资料

--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1 10 100 -100
FQP13N50C FQPF13N50C
500
13
13 *
8
8*
52
52 *
± 30
860
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
2.0 --
4.0
V
VGS = 10 V, ID = 6.5 A
-- 0.39 0.48

VDS = 40 V, ID = 6.5 A
(Note 4) --
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed

FQPF19N10L中文资料

FQPF19N10L中文资料

ID , Drain Current [A]
101 175℃
100
25℃
-55℃
10-1 0
※ Notes : 1. VDS = 30V 2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V] GS
Figure 2. Transfer Characteristics
-- 670 870
-- 160 210
-- 35
45
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
--
--
--
--
--
--
1 10 100 -100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.8 A VGS = 5 V, ID = 6.8 A VDS = 30 V, ID = 6.8 A
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient

FQPF30N06L中文资料

FQPF30N06L中文资料

Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
GD S
TO-220F
FQPF Series
D
!
"
!"
G!
" "
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
VGS = 0 V, ID = 250 µA
60
--
--
V
ID = 250 µA, Referenced to 25°C -- 0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current

FAIRCHILD FQP13N50C FQPF13N50C 说明书

FAIRCHILD FQP13N50C FQPF13N50C 说明书

现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!FQP13N50C/FQPF13N50CNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L =6.0 mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 6.5 A--0.390.48Ωg FSForward TransconductanceV DS = 40 V, I D = 6.5 A (Note 4)--15--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--15802055pF C oss Output Capacitance--180235pF C rssReverse Transfer Capacitance--2025pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 13 A,R G = 25 Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400 V, I D = 13 A,V GS = 10 V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gdGate-Drain Charge--18.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current----52A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 13 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 13 A,dI F / dt = 100 A/µs (Note 4)--410--ns Q rrReverse Recovery Charge-- 4.5--µCDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

FQPF5N60C中文资料

FQPF5N60C中文资料

V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
元器件交易网
FQP5N60C/FQPF5N60C
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FAIRCHILD FQPF30N06 数据手册

FAIRCHILD FQPF30N06 数据手册

现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!FQPF30N06TO-220FG SDNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 740µH, I AS = 21A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 30A, di/dt ≤ 300A /µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperature∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.06--V/°C I DSS Zero Gate Voltage Drain Current V DS = 60 V, V GS = 0 V ----1µA V DS = 48 V, T C = 150°C ----10µA I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -25 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 10.5 A --0.0310.04Ωg FSForward TransconductanceV DS = 25 V, I D = 10.5 A --13--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--725945pF C oss Output Capacitance--270350pF C rssReverse Transfer Capacitance--4052pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 30 V, I D = 15 A,R G = 25 Ω--1030ns t r Turn-On Rise Time --85180ns t d(off)Turn-Off Delay Time --3580ns t f Turn-Off Fall Time --4090ns Q g Total Gate Charge V DS = 48 V, I D = 30 A,V GS = 10 V--1925nC Q gs Gate-Source Charge -- 5.4--nC Q gdGate-Drain Charge--8.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----21A I SM Maximum Pulsed Drain-Source Diode Forward Current----84A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 21 A ---- 1.5V t rr Reverse Recovery Time V GS = 0 V, I S = 30 A,dI F / dt = 100 A/µs --45--ns Q rrReverse Recovery Charge--65--nC(Note 4)(Note 4, 5)(Note 4, 5)(Note 4)TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN ™POP™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™UltraFET ®VCX™。

FQP5N60C中文资料

FQP5N60C中文资料

(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
元器件交易网
FQP5N60C/FQPF5N60C
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
Figure 1. On-Region Characteristics
6
5
4
VGS = 10V
3
2 VGS = 20V
1
※ Note : TJ = 25℃
0
0
2
4
6
8
10
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

fqpf13n60c参数

fqpf13n60c参数

fqpf13n60c参数标题:探索FQPF13N60C的魅力引言:在当今科技飞速发展的时代,电子元器件的创新和应用变得越来越重要。

其中,FQPF13N60C作为一种常用的功率MOSFET,具有许多令人惊叹的特性。

本文将深入探讨FQPF13N60C的特点和应用,带领读者了解这款元器件的魅力。

1. FQPF13N60C的基本特性FQPF13N60C是一款N沟道MOSFET,具有低导通电阻、高开关速度和优异的耐压能力。

它的导通电阻仅为几个欧姆,能够承受较高的电流和电压。

这使得FQPF13N60C在功率电子应用中广泛使用,并且具有出色的性能。

2. FQPF13N60C的应用领域(1)电源管理:FQPF13N60C的低导通电阻和高开关速度使其成为电源管理领域的理想选择。

它可以有效地控制电流和电压,提高系统的效率和稳定性。

(2)电动汽车:随着电动汽车的快速发展,FQPF13N60C在电动汽车的电源系统中发挥着重要作用。

它能够承受高电流和高温环境,并且具有长寿命和可靠性。

(3)工业控制:FQPF13N60C的高性能使其成为工业控制领域的首选元器件。

它可以实现精确的电流和电压控制,帮助实现自动化生产和精密控制。

3. FQPF13N60C的优势与挑战(1)优势:FQPF13N60C具有低导通电阻、高开关速度和优异的耐压能力,这些特点使其在功率电子领域具有竞争力。

此外,它的长寿命和可靠性也是其优势之一。

(2)挑战:尽管FQPF13N60C具有许多优点,但也面临一些挑战。

例如,高温环境下的散热问题需要解决,以确保器件的稳定工作。

此外,与其他型号的元器件相比,FQPF13N60C的成本可能较高。

结论:FQPF13N60C作为一款功率MOSFET,具有出色的特性和广泛的应用领域。

它在电源管理、电动汽车和工业控制等领域发挥着重要作用。

尽管面临一些挑战,但FQPF13N60C的优势和竞争力仍然不可忽视。

相信随着科技的不断进步,FQPF13N60C将会在更多领域展现其魅力,并为人类带来更多便利和创新。

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Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 9.3mH, I AS = 12.5A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 6.25 A--0.330.43Ωg FSForward TransconductanceV DS = 50 V, I D = 6.25 A--10--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V,f = 1.0 MHz--18002300pF C oss Output Capacitance--245320pF C rssReverse Transfer Capacitance--2535pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 13.4 A,R G = 25 Ω--4090ns t r Turn-On Rise Time --140290ns t d(off)Turn-Off Delay Time --100210ns t f Turn-Off Fall Time --85180ns Q g Total Gate Charge V DS = 400 V, I D = 13.4 A,V GS = 10 V--4560nC Q gs Gate-Source Charge --11--nC Q gdGate-Drain Charge--22--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----12.5A I SM Maximum Pulsed Drain-Source Diode Forward Current----50A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 12.5 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 13.4 A,dI F / dt = 100 A/µs--290--ns Q rrReverse Recovery Charge--2.6--µC(Note 4) (Note 4, 5)(Note 4, 5)(Note 4)DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In Design First ProductionFull ProductionNot In ProductionImpliedDisconnect ISOPLANARLittleFETMicroFETMicroPakMICROWIREMSXMSXProOCXOCXProOPTOLOGIC âOPTOPLANARFACT FACT Quiet Series FAST âFASTr FRFET GlobalOptoisolator GTO HiSeCI 2CRev. I2ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2CMOS TM EnSigna TMPACMANPOP Power247 PowerTrench âQFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER âSMART START SPMStealthSuperSOT -3SuperSOT -6SuperSOT -8SyncFET TinyLogic âTruTranslation UHC UltraFET âVCXAcross the board. Around the world. The Power FranchiseProgrammable Active Droop。

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